Contact plug and interconnect employing a barrier lining and a backfilled conductor material

  • US 4,884,123 A
  • Filed: 02/19/1987
  • Issued: 11/28/1989
  • Est. Priority Date: 02/19/1987
  • Status: Expired due to Term
First Claim
Patent Images

1. A low resistance contact plug, stable in the presence of aluminum, formed in a contact hole less than about μ

  • m2 in area through at least one insulating layer formed on a semiconductor surface to at least a portion of a doped region in said semiconductor surface, said contact comprising;

    (a) an adhesion and contacting layer of titaniun about 100-800Å

    thick formed at least along the walls of said contact hole through said at least one insulating layer and in contact with said portion of said doped region;

    (b) a barrier layer formed over said adhesion and contacting layer; and

    (c) a conductive material formed over said barrier layer and at least substantially filling said contact hole; and

    a patterned interconnect electrically and physically contacting said plug.

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