Processing apparatus and method

• US 4,886,570 A
• Filed: 12/02/1988
• Issued: 12/12/1989
• Est. Priority Date: 07/16/1987
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Loewenstein, Lee M., Davis, Cecil J., Matthews, Robert T., Jucha, Rhett B., Hildenbrand, Randall C., Jones, John I.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/282,993
• Time in Patent Office: 375 Days
• Field of Search: 156/643, 156/646, 156/653, 156/656, 156/657, 156/659.1, 156/662, 156/345, 252/79.1, 118/728, 118/50.1, 118/620, 427/38, 427/39, 427/41, 427/54.1, 204/192.1, 204/192.12, 204/192.23, 204/192.25, 204/192.32, 204/192.35, 204/192.36, 204/192.37, 204/298, 437/228, 437/234, 437/235, 437/238, 437/241, 437/245, 414/217, 414/222, 414/225, 414/226, 414/744 R, 414/744 A, 414/744 B, 414/744 C, 414/411, 414/416, 414/422
• US Class Current: 438/711
• CPC Class Codes: C23C 16/482 using incoherent light, UV to IR, e.g. lamps
• CPC Class Codes: C23C 16/517 using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating

Abstract

A process module having remote plasma and in situ plasma generators, a source of ultraviolet, and a radiant heater, which represent four separate energy sources. The four sources can be used singly or in any combination and can be separately controllable.

Claims

1. A vacuum process module capable of receiving a workpiece comprising:

(a) a process chamber;

(b) a remote plasma generator remote from said process chamber;

(c) an in situ plasma generator within said process chamber;

(d) a radiant heater coupled to said process chamber; and

(e) a source of ultraviolet light within said process module.

2. The module as set forth in claim 1 wherein workpiece as its face to be process facing downward.

3. The module as set forth in claim 1 wherein said remote generator, said in situ generator, said heater and said source are separately controlled to operate singly.

4. The module as set forth in claim 1 wherein said remote generator, said in situ generator, said heater and said source are separately controlled to operate in any combination.

5. The module as set forth in claim 1 wherein said radiant heater is located above said workpiece during processing.

6. The module as set forth in claim 1 wherein said source is located below said workpiece during processing.

7. The module as set forth in claim 1 wherein said in situ plasma is generated below said workpiece and said in situ plasma generator has electrodes above and below said workpiece.

8. The module as set forth in claim 1 wherein the plasma from said remote plasma generator is introduce to the surface from below said workpiece.

9. The module as set forth in claim 1 wherein the workpiece is a wafer.

10. A vacuum process module capable of receiving a workpiece comprising:

(a) a plasma generator generating at least free radicals remote from and in fluid communication with said workpiece;

(b) an in situ plasma generator generating a plasma, said plasma being coupled to said workpiece;

(c) a heater coupled to said workpiece; and

(d) a source of ultraviolet light coupled to said workpiece.

11. The module as set forth in claim 10 wherein workpiece as its face to be process facing downward.

12. The module as set forth in claim 10 wherein said remote generator, said in situ generator, said heater and said source are separately controlled to operate singly.

13. The module as set forth in claim 10 wherein said remote generator, said in situ generator, said heater and said source are separately controlled to operate in any combination.

14. The module as set forth in claim 10 wherein said heater is located above said workpiece during processing.

15. The module as set forth in claim 10 wherein said heater is a radiant heater.

16. The module as set forth in claim 10 wherein said heater is a conductive heater.

17. The module as set forth in claim 10 wherein said ultraviolet source is located below said workpiece during processing.

18. The module as set forth in claim 10 wherein said in situ plasma is generated below said workpiece and said in situ plasma generator has electrodes above and below said workpiece.

19. The module as set forth in claim 10 wherein the plasma from said remote plasma generator is introduced to the surface from below said workpiece.

20. The module as set forth in claim 10 wherein the workpiece is a wafer.

21. A control system for use with a semiconductor processing module, comprising:

(a) a plurality of independent energy sources coupled into the same process chamber;

(b) at least one power source for each energy source having a first input; and

(c) a computer system which is electrically coupled to said first input.

22. A control system for use with a semiconductor processing module comprising:

(a) a plurality of independent energy sources coupled into the same process chamber;

(b) at least one power source for each energy source having a first input;

(c) a control system providing sequential control which is electrically coupled to said first input.

23. A control system for use with a semiconductor processing module comprising:

(a) a plurality of independent energy sources coupled into the same process chamber;

(b) at least one power source for each energy source having a first input;

(c) a plurality of controllers which are electrically coupled to said first input and having a second input; and

(d) a computer system which is electrically coupled to said second input.

24. A control system for use with a semiconductor processing module comprising:

(a) a plurality of independent energy sources coupled into the same process chamber each energy source having a first input; and

(b) a computer system which is electrically coupled to at least some of said first inputs.

25. A control system for use with a semiconductor processing module comprising:

(a) a plurality of independent energy sources coupled into the same process chamber comprising;

(b) each energy source having a first input;

(c) a control system providing sequential control which is electrically coupled to said first input.

26. A control system for use with a semiconductor processing module comprising:

(a) a plurality of independent energy sources coupled into the same process chamber;

(b) each energy source having a first input;

(c) a plurality of controllers which are electrically coupled to said first input and having a second input; and

(d) a computer system which is electrically connected to said second input.

27. A control system for use with a semiconductor processing module which has a plurality of independent energy sources coupled into the same process chamber comprising;

(a) a separate power source for each energy source having a first input; and

(b) a computer system which is electrically connected to said first input.

28. A control system for use with a semiconductor processing module which has a plurality of independent energy sources coupled into the same process chamber comprising;

(a) a separate power source for each energy source having a first input;

(b) a control system providing sequential control which is electrically connected to said first input.

29. A control system for use with a semiconductor processing module which has a plurality of independent energy sources coupled into the same process chamber comprising;

(a) a separate power source for each energy source having a first input;

(b) a plurality of controllers which are electrically connected to said first input and having a second input; and

(c) a computer system which is electrically connected to said second input.

30. A control system for use with a semiconductor processing module which has at least two independent energy sources coupled into the same process chamber comprising;

(a) a separate power source for each energy source having a first input; and

(b) a computer sytem which is electrically connected to said first input.

31. A control system for use with a semiconductor processing module which has at least two independent energy sources coupled into the same process chamber comprising;

(a) a separate power source for each energy source having a first input;

(b) a control system providing sequential control which is electrically connected to said first input.

32. A control system for use with a semiconductor processing module which has at least two independent energy sources coupled into the same process chamber comprising;

(a) a separate power source for each energy source having a first input;

(b) a plurality of controllers which are electrically connected to said first input and having a second input; and

(c) a computer system which is electrically connected to said second input.

33. A method processing a workpiece in a process chamber comprising the steps of:

(a) introducing free radicals to the workpiece;

(b) coupling an energy source to the process chamber;

(c) independently controlling free radical and other particle concentrations and energies in said process chamber.

34. The method as set forth in claim 33 wherein said introducing free radicals and said coupling an energy source occur simultaneously.

35. The method as set forth in claim 33 wherein said workpiece has its face to be processed facing downward.

36. A method for controlling at least a first and second independent energy source coupled into the same semiconductor processing chamber comprising;

(a) providing at least one power source for each of said first and second independent energy sources; and

(b) controlling said at least one power source using a computer system.

37. A method for controlling a plurality of independent energy sources coupled into the same semiconductor processing chamber comprising;

(a) applying a first selected energy level to a first energy source;

(b) applying a second selected energy level to a second energy source; and

(c) modifying said first selected energy level.

38. The method of claim 37 further including modifying said second selected energy level.

39. The method of claim 38 wherein said first selected energy level is modified before said second selected energy level.

40. The method of claim 38 wherein said first selected energy and said second selected energy are modified simultaneously.