Silicon based mass airflow sensor and its fabrication method

• US 4,888,988 A
• Filed: 12/23/1987
• Issued: 12/26/1989
• Est. Priority Date: 12/23/1987
• Status: Expired due to Fees

• Current Assignee: Siemens-Bendix Automotive Electronics LP
• Original Assignee: Siemens-Bendix Automotive Electronics LP
• Inventors: Choi, Il-Hyun, Lee, Ki W.
• Primary Examiner(s): Goldstein, Herbert
• Application Number:
  US07/137,299
• Time in Patent Office: 734 Days
• Field of Search: 73/204, 73/204.26
• US Class Current: 73/204.26
• CPC Class Codes: G01F 1/6845 Micromachined devices
• CPC Class Codes: G01L 9/0048 Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief

Abstract

A mass airflow sensor is fabricated on a semiconductor substrate and which includes (1) a dielectric diaphragm, (2) p-etch-stopped silicon rim, (3) thin-film heating and temperature sensing elements, and (4) tapered chip edges. The dielectric diaphragm is formed with thin silicon oxide and silicon nitride in a sandwich structure and provides excellent thermal insulation for the sensing and heating elements of the sensor. The diaphragm dimensions, including thickness, are accurately controlled through the use of the heavily-p-doped silicon rim to help ensure uniform and reproducible sensor performance.

Claims

1. A mass airflow sensor having a longitudinal axis comprising:

a dielectric diaphragm;

a thin-film heating element disposed on said diaphragm;

a thermally conductive semiconductor rim comprising a heavily doped etch stopped region encompassing at least a major portion of said dielectric diaphragm; and

at least one thin-film sensing element disposed on said diaphragm, said at least one sensing element being disposed at least in part over said semiconductor rim, whereby the temperature gradient between the heating element and said at least one sensing element may be monitored to determine the airflow rate, said heating element being centrally disposed substantially along the longitudinal axis of the sensor and a plurality of sensing elements disposed on both sides of said heating element.

2. A sensor according to claim 1, wherein said dielectric diaphragm comprises a sandwich structure of dielectric materials having substantially different coefficients of thermal expansion.

3. A sensor according to claim 1, wherein the mass airflow sensor is fabricated from a semiconductor substrate and wherein the semiconductor substrate below the dielectric diaphragm is removed.

4. A sensor according to claim 3, wherein a semiconductor substrate region is disposed below the semiconductor rim.

5. A sensor according to claim 1, further including at least one thin-film sensing element disposed between said heating element and said semiconductor rim.

6. A sensor according to claim 1, wherein each of said heating element and said sensing element are substantially parallel with respect to each other.

7. A sensor according to claim 1, wherein the diaphragm dimensions are determined by the semiconductor rim.

8. A sensor according to claim 1, wherein said sensor is fabricated on a semiconductor substrate and further includes:

read-out and control means fabricated on said semiconductor substrate for energizing said heating element and receiving signals from said at least one sensing element.

9. A sensor according to claim 1, wherein said sensor is fabricated on a semiconductor substrate and said heating element is disposed on a front surface of said substrate and wherein at least one side of the substrate is tapered.

10. A sensor according to claim 9, wherein said at least one side includes a double-side tapered edge.

11. A sensor according to claim 8, wherein said read-out and control means has a plurality of output lines emanating therefrom, and further including a support substrate having a like plurality of electrical lines for respectively contacting each of said plurality of output lines, to thereby provide electrical connection to external control and power supply circuitry.

12. A mass airflow sensor comprising:

a dielectric diaphragm;

a thin-film heating element disposed on said diaphragm;

a thermally conductive semiconductor rim encompassing at least a major portion of said dielectric diaphragm and comprised of p-etch-stopped silicon; and

at least one thin-film sensing element disposed on said diaphragm, the diaphragm dimensions being determined by the semiconductor rim.

13. A sensor according to claim 12, wherein said dielectric diaphragm comprises a sandwich structure of dielectric materials having substantially different coefficients of thermal expansion.

14. A sensor according to claim 13, wherein said sandwich structure comprises silicon dioxide and silicon nitride.

15. A sensor according to claim 12, wherein said at least one sensing element is disposed at least in part over said semiconductor rim, whereby the temperature gradient between the heating element and said at least one sensing element may be monitored to determine the airflow rate.

16. A sensor according to claim 12, wherein the mass airflow sensor is fabricated from a semiconductor substrate and wherein the semiconductor substrate below the dielectric diaphragm is removed.

17. A sensor according to claim 16, wherein a semiconductor substrate region is disposed below the semiconductor rim.

18. A sensor according to claim 12, further including at least one thin-film sensing element disposed between said heating element and said semiconductor rim.

19. A sensor according to claim 12 having a longitudinal axis, wherein said heating element is centrally disposed substantially along the longitudinal axis of the sensor and wherein a plurality of sensing elements are disposed on both sides of said heating element.

20. A sensor according to claim 19, wherein each of said heating element and said sensing element are substantially parallel with respect to each other.

21. A sensor according to claim 12, wherein said sensor is fabricated on a semiconductor substrate and further includes:

read-out and control means fabricated on said semiconductor substrate for energizing said heating element and receiving signals from said at least one sensing element.

22. A sensor according to claim 12, wherein said sensor is fabricated on a semiconductor substrate and said heating element is disposed on a front surface of said substrate and wherein at least one side of the substrate is tapered.

23. A sensor according to claim 22, wherein said at least one side includes a double-side tapered edge.

24. A sensor according to claim 21, wherein said read-out and control means has a plurality of output lines emanating therefrom, and further including a support substrate having a like plurality of electrical lines for respectively contacting each of said plurality of output lines, to thereby provide electrical connection to external control and power supply circuitry.

25. A mass airflow sensor fabricated on a semiconductor substrate comprising:

a dielectric diaphragm;

a heating element and at least one temperature sensing element disposed on said diaphragm;

a semiconductor region disposed adjacent said diaphragm;

at least one temperature sensing element disposed over said semiconductor region, whereby an airflow therepast may be determined based on the temperature gradient between the heating element and said at least one temperature sensing element disposed over said semiconductor region, said semiconductor region comprising a heavily doped etch stopped region which surrounds said dielectric diaphragm.

26. A sensor according to claim 25, wherein said heating element and said at least one sensing elements are thin-film components.

27. A sensor according to claim 25, wherein said dielectric diaphragm comprises a sandwich structure of dielectric materials having substantially different coefficients of thermal expansion.

28. A sensor according to claim 25, wherein the semiconductor substrate below the dielectric diaphragm has been removed.

29. A sensor according to claim 25, further including at least one thin-film sensing element disposed between said heating element and said semiconductor region.

30. A sensor according to claim 25 having a longitudinal axis, wherein said heating element is centrally disposed substantially along the longitudinal axis of the sensor and wherein a plurality of sensing elements are disposed on both sides of said heating element.

31. A sensor according to claim 25, further including read-out and control means fabricated on said semiconductor substrate for energizing said heating element and receiving signals from said at least one temperature sensing element.

32. A sensor according to claim 25, wherein said heating element is disposed on a front surface of said substrate and wherein at least one side of the substrate is tapered.

33. A sensor according to claim 32, wherein said at least one side includes a double-side tapered edge.

34. A sensor according to claim 31, wherein said read-out and control means has a plurality of output lines emanating therefrom and further including a support substrate having a like plurality of electrical lines for respectively contacting each of said plurality of output lines, to thereby provide electrical connection to external control and power supply circuitry.

35. A mass airflow sensor having a longitudinal axis comprising:

a dielectric diaphragm;

a thin-film heating element disposed on said diaphragm;

a thermally conductive semiconductor rim encompassing at least a major portion of said dielectric diaphragm;

at least one thin-film sensing element disposed on said diaphragm, said at least one sensing element being disposed at least in part over said semiconductor rim, whereby the temperature gradient between the heating element and said at least one sensing element may be monitored to determine the airflow rate, said heating element being centrally disposed substantially along the longitudinal axis of the sensor and a plurality of sensing elements disposed on both sides of said heating element; and

said dielectric diaphragm having a sandwich structure of dielectric materials having substantially different coefficients of thermal expansion, said sandwich structure being comprised of silicon dioxide and silicon nitride.

36. A sensor according to claim 35, wherein the mass airflow sensor is fabricated from a semiconductor substrate and wherein the semiconductor substrate below the dielectric diaphragm is removed.

37. A sensor according to claim 35, wherein a semiconductor substrate region is disposed below the semiconductor rim.

38. A sensor according to claim 35, wherein each of said heating element and said sensing elements are substantially parallel with respect to each other.

39. A sensor according to claim 35, wherein the diaphragm dimensions are determined by the semiconductor rim.

40. A sensor according to claim 35, wherein said sensor is fabricated on a semiconductor substrate and further includes:

read-out and control means fabricated on said semiconductor substrate for energizing said heating element and receiving signals from said at least one sensing element.

41. A sensor according to claim 35, wherein said sensor is fabricated on a semiconductor substrate and said heating element is disposed on a front surface of said substrate and wherein at least one side of the substrate is tapered.

42. A sensor according to claim 41, wherein said at least one side includes a double-side tapered edge.

43. A sensor according to claim 35, wherein said sensor is fabricated on a semiconductor substrate and further includes:

read-out and control means fabricated on said semiconductor substrate for energizing said heating element and receiving signals from said at least one sensing element, said read-out and control means having a plurality of output lines emanating therefrom, and further including a support substrate having a like plurality of electrical lines for respectively contacting each of said plurality of output lines, to thereby provide electrical connection to external control and power supply circuitry.