Process for doping crystals of wide band gap semiconductors

  • US 4,904,618 A
  • Filed: 08/22/1988
  • Issued: 02/27/1990
  • Est. Priority Date: 08/22/1988
  • Status: Expired due to Term
First Claim
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1. A process for the non-equilibrium incorporation of a dopant into a crystal of a wide band gap semiconductor comprising the steps of treating the crystal in the presence of first and second compensating dopants of different mobilities for introducing substantially equal amounts of the two dopants into at least a portion of the crystal such that the concentration of the less mobile of the two dopants in said portion of the crystal is in excess of the solubility therein of the less mobile dopant in the absence of the more mobile of the two dopants, and then heating the crystal to remove therefrom preferentially the more mobile of the two dopants whereby there is left a non-equilibrium concentration of the less mobile dopant in said portion of the crystal.

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