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Remote plasma generation process using a two-stage showerhead

  • US 4,904,621 A
  • Filed: 07/16/1987
  • Issued: 02/27/1990
  • Est. Priority Date: 07/16/1987
  • Status: Expired due to Term
First Claim
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1. A method of treating a semiconductor wafer comprising:

  • (a) transferring a wafer into a process vacuum chamber;

    (b) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient;

    (c) heating said wafer to an appropriate temperature;

    (d) providing an appropriate gas to a plasma generating module separated from said chamber and producing a remote plasma;

    (e) flowing said plasma sequentially through both stages of a two-stage showerhead, wherein each stage includes a baffle having a plurality of holes measuring 0.1-0.25 inch, and none of the holes in one stage is aligned with a hole of the other stage; and

    (f) flowing the gas over said wafer disposed within said chamber.

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