Remote plasma generation process using a two-stage showerhead
First Claim
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1. A method of treating a semiconductor wafer comprising:
- (a) transferring a wafer into a process vacuum chamber;
(b) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient;
(c) heating said wafer to an appropriate temperature;
(d) providing an appropriate gas to a plasma generating module separated from said chamber and producing a remote plasma;
(e) flowing said plasma sequentially through both stages of a two-stage showerhead, wherein each stage includes a baffle having a plurality of holes measuring 0.1-0.25 inch, and none of the holes in one stage is aligned with a hole of the other stage; and
(f) flowing the gas over said wafer disposed within said chamber.
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Abstract
A processing apparatus and method for performing a descum process (i.e. a process for removal of polymers and other organic residues) which uses a remote plasma, supplied through a distributor which includes a two-stage showerhead, to achieve improved results.
306 Citations
6 Claims
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1. A method of treating a semiconductor wafer comprising:
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(a) transferring a wafer into a process vacuum chamber; (b) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient; (c) heating said wafer to an appropriate temperature; (d) providing an appropriate gas to a plasma generating module separated from said chamber and producing a remote plasma; (e) flowing said plasma sequentially through both stages of a two-stage showerhead, wherein each stage includes a baffle having a plurality of holes measuring 0.1-0.25 inch, and none of the holes in one stage is aligned with a hole of the other stage; and (f) flowing the gas over said wafer disposed within said chamber. - View Dependent Claims (3)
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2. A method of descumming a wafer comprising:
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(a) transferring a wafer into a process vacuum chamber; (b) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient; (c) heating said wafer to an appropriate temperature; (d) providing one gas from the group consisting of hydrogen, nitrous oxide, carbon tetraflouride, hydrochloric, hydrobromic or CHF3 to a plasma generating module separated from said chamber and producing a remote plasma; (e) flowing said plasma sequentially through both stages of a two-stage showerhead, wherein each stage includes a baffle having a plurality of holes measuring 0.1-0.25 inch, and none of the holes in one stage is aligned with a hole of the other stage; and (f) flowing the gas over the said wafer disposal within said chamber.
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4. A method of descumming a wafer comprising;
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(a) disposing said wafer into a process chamber at low pressure; (b) heating said wafer to an appropriate temperature; (c) generating a remote plasma; and (d) introducing said plasma sequentially through both stages of a two-stage showerhead into said chamber to a face of said water;
wherein each stage includes a baffle having a plurality of holes measuring 0.1-0.25 inch, and none of the holes in one stage is aligned with a hole of the other stage.
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5. A method of descumming a wafer comprising:
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(a) disposing said wafer into a process chamber; (b) heating said wafer to an appropriate temperature; (c) generating at least free radicals from at least one gas taken from the group consisting of hydrogen, nitrous oxide, carbon tetraflouride, hydrochloric, hydrobromic or CHF3 in a chamber remote and in fluid communication with said process chamber; and (d) introducing said at least free radicals sequentially through both stages of a showerhead into said process chamber and to a face of said wafer;
wherein each stage includes a baffle having a plurality of holes measuring 0.1-0.25 inch, and none of the holes in one stage is aligned with a hole of the other stage. - View Dependent Claims (6)
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Specification