Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
First Claim
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1. A method of producing a device quality silicon carbide film on a silicon carbide substrate of the same polytype comprising:
- homoepitaxially depositing a film of an Alpha-SiC polytype on a prepared planar surface of an Alpha-SiC substrate, wherein the planar surface is inclined more than one degree off axis with respect to a basal plane thereof substantially towards one of the <
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directions.
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Abstract
Device quality monocrystalline Alpha-SiC thin films are epitaxially grown by chemical vapor deposition on Alpha-SiC [0001] substrates prepared off axis.
170 Citations
21 Claims
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1. A method of producing a device quality silicon carbide film on a silicon carbide substrate of the same polytype comprising:
homoepitaxially depositing a film of an Alpha-SiC polytype on a prepared planar surface of an Alpha-SiC substrate, wherein the planar surface is inclined more than one degree off axis with respect to a basal plane thereof substantially towards one of the <
1120>
directions.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of producing a monocrystalline 6H SiC thin film homoepitaxially deposited on an off axis 6H SiC substrate, wherein the film is characterized by a smooth surface morphology, substantially uniform thickness and a low, device quality defect level, said method comprising:
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lapping a 6H SiC substrate crystal to expose a planar surface that is inclined more than one degree off axis with respect a basal plane thereof substantially towards one of the <
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directions;preparing the off axis planar surface of the substrate to be receptive to epitaxial growth thereon; heating the substrate crystal in a growth chamber; introducing a carrier gas, a vaporized silicon-containing material and a vaporized carbon-containing material into the growth chamber while providing sufficient energy to create surface diffusion of silicon and carbon species at the substrate planar surface and establish a homoepitaxial growth of monocrystalline 6H SiC; and maintaining the carrier gas, silicon-containing material and carbon-containing material flows and the energy levels for a time sufficient to grow a film of desired thickness. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of producing a device quality silicon carbide film on a silicon carbide substrate, said method comprising:
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producing by sublimation a large, device quality Alpha-SiC single crystal; slicing the crystal to form wafers; preparing one of the wafers to establish a planar surface that is inclined more than one degree off axis with respect to a basal plane of the crystal substantially towards one of the <
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directions;depositing a film of Alpha-SiC on the planar surface of the substrate. - View Dependent Claims (21)
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Specification