Method for tapered etching

  • US 4,919,748 A
  • Filed: 06/30/1989
  • Issued: 04/24/1990
  • Est. Priority Date: 06/30/1989
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of semiconductor device fabrication comprising:

  • forming a first layer upon a substrate;

    forming a second layer containing aluminum upon said first layer;

    etching both said first and said second layer with a gas mixture, characterized in that said gas mixture contains chlorine and trifluoromethane and said etching step produces a tapered profile.

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