High power semiconductor laser

  • US 4,942,585 A
  • Filed: 12/22/1987
  • Issued: 07/17/1990
  • Est. Priority Date: 12/22/1987
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor laser comprising:

  • an elongated active gain medium layer;

    a relatively narrower mirror facet at one end of the gain layer;

    an output facet at the other end of the gain layer sufficiently aligned with the mirror facet for Fabry-Perot oscillation between the facets, the output facet being relatively wider than the mirror facet;

    means adjacent to only the mirror facet for pumping a parallel edged index guided portion of the gain layer for stimulated emission of radiation in a mode selecting waveguide portion of the gain layer; and

    means for pumping a diverging portion of the gain layer between the parallel edged portion and the output facet for stimulated emission of radiation.

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