High power semiconductor laser

• US 4,942,585 A
• Filed: 12/22/1987
• Issued: 07/17/1990
• Est. Priority Date: 12/22/1987
• Status: Expired due to Term

• Current Assignee: Agere Systems Incorporated (Broadcom, Inc.)
• Original Assignee: Ortel Corporation (Emcore Corporation)
• Inventors: Ungar, Jeffrey E.
• Primary Examiner(s): FONT, FRANK G
• Application Number:
  US07/138,557
• Time in Patent Office: 938 Days
• Field of Search: 372/44, 372/45, 372/46-49, 372/103
• US Class Current: 372/44.011
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/0281 Coatings made of semiconductor materials
• CPC Class Codes: H01S 5/1064 varying width along the optical axis
• CPC Class Codes: H01S 5/164 with window regions comprising semiconductor material with a wider bandgap than the active layer
• CPC Class Codes: H01S 5/20 Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers

Abstract

A heterostructure semiconductor laser provides high power by having a wide output facet so that the power density at the output facet is low enough to avoid catastrophic optical mirror damage. Single transverse mode oscillation occurs in the center of a pumped trapezoidal gain medium layer between the wide output facet and a relatively narrower mirror facet. Stimulated emission of radiation in the balance of the pumped trapezoidal area produces high power output. At the opposite end of the gain layer from the output facet, a parallel edged, index guided pumped region of the gain layer provides a single transverse mode wave guide for assuring single mode output. Preferably the narrower facet has a higher reflectivity than the wider facet, and a non-absorbing window is provided at the wider facet, for lowest lasing threshold and highest power output.

Claims

1. A semiconductor laser comprising:

an elongated active gain medium layer;

a relatively narrower mirror facet at one end of the gain layer;

an output facet at the other end of the gain layer sufficiently aligned with the mirror facet for Fabry-Perot oscillation between the facets, the output facet being relatively wider than the mirror facet;

means adjacent to only the mirror facet for pumping a parallel edged index guided portion of the gain layer for stimulated emission of radiation in a mode selecting waveguide portion of the gain layer; and

means for pumping a diverging portion of the gain layer between the parallel edged portion and the output facet for stimulated emission of radiation.

2. A semiconductor laser as recited in claim 1 comprising means for providing a relatively higher reflectivity at the mirror facet and means for providing a relatively lower reflectivity at the output facet.

3. A semiconductor laser as recited in claim 1 further comprising a non-absorbing window between the end of the diverging pumped portion of the gain layer and the output facet.

4. A semiconductor laser as recited in claim 3 further comprising a non-absorbing window between the waveguide portion and the mirror facet.

5. A heterostructure semiconductor laser comprising:

an elongated active gain medium layer;

a relatively narrower, higher reflectivity mirror facet at one end of the gain layer;

a relatively wider, lower reflectivity output facet at the other end of the gain layer sufficiently aligned with the mirror facet for Fabry-Perot oscillation between the facets; and

means for pumping for stimulated emission of radiation an area of the gain medium having parallel index guided edges adjacent to the mirror facet and having edges diverging from the ends of the parallel edges toward the output facet.

6. A semiconductor laser as recited in claim 5 further comprising a non-absorbing window between the end of the pumped area of the gain layer and the output facet.

7. A semiconductor laser as recited in claim 6 further comprising a non-absorbing window between the parallel edged area and the mirror facet.

8. A heterostructure semiconductor laser comprising:

an elongated active gain medium layer;

a relatively narrower, higher reflectivity mirror facet at one end of the layer;

a relatively wider, lower reflectively output facet at the other end of the layer sufficiently aligned with the mirror facet for Fabry-Perot oscillation between the facets;

means for pumping for gain guided stimulated emission of radiation an area of the gain layer having edges diverging toward the output facet;

means for pumping the gain layer in an elongated area having parallel edges between the narrower end of the diverging area and the mirror, facet; and

means for index guiding radiation in the elongated area having parallel edges.

9. A semiconductor laser as recited in claim 8 wherein the diverging edges diverge at approximately the diffraction angle of radiation from the area having parallel edges.

10. A semiconductor laser as recited in claim 8 further comprising a non-absorbing window between the end of the diverging area of the gain layer and the output facet.

11. A semiconductor laser as recited in claim 10 further comprising a non-absorbing window between the parallel edged area and the mirror facet.

12. A heterostructure semiconductor laser comprising:

an active gain medium layer;

means for pumping a longitudinally symmetrical trapezoidal area of the gain layer for stimulating radiation therein;

an at least partially reflective facet adjacent to the wider parallel edge of the trapezoidal area for forming a Fabry-Perot cavity;

a non-pumped area of the gain layer lying along each non-parallel edge of the trapezoidal area;

means for pumping an area of the gain layer having parallel index guiding edges extending normal to the smaller parallel edge of the trapezoidal area; and

an at least partially reflective facet at the end of the index guided area remote from the smaller edge of the trapezoidal area.