Chemical vapor deposition of bismuth oxide

• US 4,965,093 A
• Filed: 07/05/1988
• Issued: 10/23/1990
• Est. Priority Date: 07/05/1988
• Status: Expired due to Fees

• Current Assignee: PPG Industries Incorporated (Nouryon BV)
• Original Assignee: PPG Industries Incorporated (Nouryon BV)
• Inventors: Neuman, George A., Bloss, Karl H.
• Primary Examiner(s): BELL, JANYCE A
• Application Number:
  US07/219,693
• Time in Patent Office: 840 Days
• Field of Search: 427/109, 427/126.3, 427/126.2, 427/166, 427/255.3, 427/226, 427/255
• US Class Current: 427/109
• CPC Class Codes: C03C 17/245 by deposition from the vapour phase
• CPC Class Codes: C03C 2217/228 Other specific oxides
• CPC Class Codes: C03C 2218/152 by cvd
• CPC Class Codes: C23C 16/407 of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Abstract

Novel organometallic coating compositions comprising organo bismuth compounds are disclosed, along with a method for chemical vapor deposition to form bismuth oxide films on the surface of a substrate such as glass.

Claims

1. A method of forming a bismuth oxide coating by chemical vapor deposition comprising the steps of:

a. contacting a surface of a substrate in an oxidizing atmosphere with a water stable organo bismuth compound;

b. maintaining a temperature sufficient to thermally decompose said organo bismuth compound; and

c. thermally decomposing said organo bismuth compound in vapor form to deposit a bismuth oxide film on said surface.

2. A method according to claim 1, wherein said substrate is glass.

3. A method according to claim 2, wherein said organo bismuth compound is combined with a carrier gas to form a mixture.

4. A method according to claim 3, wherein said carrier gas is air.

5. A method according to claim 4, wherein said organo bismuth compound is selected from the group consisting of arylbismuthines and alkenylbismuthines.

6. A method according to claim 5, wherein said organo bismuth compound is selected from the group consisting of triarylbismuthines, aralkylbismuthines, alkoxyarylbismuthines, and trialkenylbismuthines.

7. A method according to claim 6, wherein said triarylbismuthine is selected from the group consisting of triphenyl bismuthine and tri-2,4-xylyl bismuthine.

8. A method according to claim 7, wherein said aryl bismuth compound is triphenyl bismuthine.

9. A method according to claim 8, wherein said substrate is contacted with triphenyl bismuthine at a temperature of at least 350°

C.

10. A method according to claim 9, wherein said substrate is contacted with triphenyl bismuthine at a temperature in the range of 500°

to 650°

C.