Substrates for presensitized plates for use in making lithographic printing plates

• US 4,970,116 A
• Filed: 12/06/1988
• Issued: 11/13/1990
• Est. Priority Date: 12/07/1987
• Status: Expired due to Term

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Kimura, Takeshi, Sakaki, Hirokazu
• Primary Examiner(s): Herbert, Thomas J.
• Application Number:
  US07/280,433
• Time in Patent Office: 707 Days
• Field of Search: 430/278, 428/332, 428/341, 428/469, 428/331, 428/323
• US Class Current: 428/332
• CPC Class Codes: B41N 3/034 characterised by the electrochemical treatment of the aluminum support, e.g. anodisation, electro-graining; Sealing of the anodised layer; Treatment of the anodic layer with inorganic compounds; Colouring of the anodic layer
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• CPC Class Codes: Y10T 428/273 of coating

Abstract

A substrate for presensitized plates for use in making lithographic printing plates which comprises an alumium plate provided thereon with a porous anodized film, the degree of sealing of the anodized film being not less than 25%. The substrate can impart various excellent properties to the lithographic printing plate as a final product. That is, the plate sparingly causes contamination of the non-image portions thereof; has high resistance to scratching; and is excellent in wear resistance, recovery from contamination with ink and printing durability due to improvement in the properties of the anodized film.

Claims

1. A substrate for presensitized plates for use in making lithographic printing plates comprising an aluminum plate provided thereon with a porous anodized film, wherein the degree of sealing of the anodized film is not less than 25%, and the amount of the porous anodized film is 0.8g/m² or more.

2. A substrate of claim 1 wherein the thickness of the aluminium plate ranges from 0.1 to 0.5 mm.

3. A substrate of claim 1 wherein the aluminum plate is substantially comprised of pure aluminum.

4. A substrate of claim 1 wherein the porous anodized film is formed by electrolyzing the aluminum plate in an electrolyte having a concentration of 1 to 80% by weight, at a temperature of 5°

to 80°

C., a current density of 5 to 80 A/dm² and a voltage of 1 to 100 V for 5 seconds to 10 minutes.

5. A substrate of claim 1 wherein the surface of the aluminum plate is grained prior to the anodization.

6. A substrate of claim 1 wherein the aluminum plate is a pure aluminum plate or a plate of an aluminum allloy containing different elements in a trace amount.

7. A substrate of claim 6 wherein the amount of the different elements in the aluminum alloy is not more than 10% by weight of the alloy.

8. A substrate of claim 6 wherein the different elements are selected from the group consisting of silicon, iron, manganese, copper, magnesium, chromium, zinc, bismuth, nickel and titanium.

9. A substrate of claim 1 wherein the pores of the anodized film are sealed by electrolytic sealing, sputtering, vapour deposition or ion implantation technique.

10. A substrate of claim 9 wherein the pores of the anodized film are sealed by electrolytic sealing technique.

11. A substrate of claim 10 wherein the degree of sealing of the anodized film is controlled by adjusting voltage applied during the electrolytic sealing.

12. A substrate of claim 10 wherein the electrolytic sealing is carried out in an electrolyte selected from the group consisting of oxo acids, salts of these acids or a mixture of these acids and/or salts and fine particles of inorganic substances.

13. A substrate of claim 12 wherein the electrolyte is selected from the group consisting of boric acid, phosphoric acid, sulfuric acid, vanadic acid, molybdic acid, tungstic acid, carbonic acid, carboxylic acid, silicic acid, phosphomolybdic acid, phosphotungstic acid;

and sodium, potassium, copper, nickel, cobalt, cadmium, zinc, tin, ammonium, calcium, lithium, magnesium and barium salts thereof.

14. A substrate of claim 12 wherein the fine particles of the inorganic substances are selected from the group consisting of silica, alumina, titania, titanium nitride, aluminum nitride and carbon silicide.

15. A substrate of claim 1 wherein the amount of the porous anodized film ranges from 0.8 to 10g/m².

16. A substrate of claim 15 wherein the amount of the porous anodized film ranges from 1 to 6 g/M².

17. A substrate of claim 1 wherein the aluminum plate whose porous anodized film is sealed is subjected to hydrophilization treatment.

18. A substrate of claim 17 wherein the aluminum plate is treated with an aqueous solution of an alkali metal silicate before or after the hydrophilization treatment.