Integratable hall element

• US 4,987,467 A
• Filed: 09/30/1988
• Issued: 01/22/1991
• Est. Priority Date: 12/19/1983
• Status: Expired due to Fees

• Current Assignee: LGZ Landis & Gyr Zug AG (Landis+Gyr Group AG)
• Original Assignee: LGZ Landis & Gyr Zug AG (Landis+Gyr Group AG)
• Inventors: Popovic, Radivoje
• Primary Examiner(s): LARKINS, WILLIAM
• Application Number:
  US07/252,781
• Time in Patent Office: 844 Days
• Field of Search: 357/27, 357/48, 357/50, 357/36
• US Class Current: 257/427
• CPC Class Codes: G01R 15/202 using Hall-effect devices Hall elements in arrangements for measuring electrical power G01R21/08
• CPC Class Codes: G01R 21/08 by using galvanomagnetic-effect devices, e.g. Hall-effect devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices

Abstract

In an integrable Hall element, which includes a semiconductor layer of a single conductive type, a plurality of current electrodes adapted for being connected to an energy source, and wherein at least one current electrode and two sensor electrodes are located on a surface of the Hall element, and the one current electrode has a first connecting contact forming a first energy source pole, the improvement consists in the one current electrode being approximately located in the center of a line connecting the sensor electrodes. The remaining current electrodes are distributed current electrodes which have a second connecting contact, and a second energy source pole is formed by the distributed current electrodes; the distributed electrodes are so located with respect to the one current electrode so that all currents flowing between the one electrode and the distributed electrodes form a resultant current vector extending in the vicinity of the one current electrode substantially at right angles to the surface of the semiconductor layer.

Claims

1. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes, the part of said semiconductor layer disposed below said first current electrode and said first and second sensor electrodes forming an active portion of said Hall element;

a plurality of additional current electrodes spaced away from said first current electrode, wherein said additional current electrodes are disposed approximately symmetrically about an axis which passes through said first current electrode at approximately a right angle to said major surface, and wherein at least some of said additional current electrodes are each defined by at least one relatively large electrically conducting surface portion symmetrically disposed about said axis;

at least one electrically insulated connecting contact disposed on said major surface exteriorly of said active portion; and

at least one electric ohmic conducting connection;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrode along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface;

said relatively large electrically conducting surface portion being a buried layer disposed substantially parallel to said major surface in said semiconductor layer below said active portion of said Hall element, said one electric ohmic conducting connection connecting said connecting contact with said buried layer;

said semiconductor layer being of a first conductivity type; and

said buried layer and said conducting connection being comprised of a strongly doped semiconductor material which is of the same conductivity type as said semiconductor layer.

7. The integratable Hall element as claimed in claim 1 or claim 2 or claim 3 or claim 4 or claim 5 or claim 6, wherein at least some of said first and said additional current electrodes and said sensor electrodes are each defined as a surface portion comprising a semiconductor material, further comprising a connecting contact to each of said first and said additional current electrodes and said sensor electrodes, at least a part of each of said connecting contacts being a metallic contact disposed at said major surface and a diffusion contact below said metallic contact and in intimate contact with said metallic contact, said diffusion contacts being strongly doped semiconductor material of the same conductivity type as that of said semiconductor layer, said diffusion contacts being diffused into said semiconductor layer.

8. The integratable Hall element as claimed in claim 1 or claim 2 or claim 3 or claim 4 or claim 5 or claim 6, wherein at least some of said first and said additional current electrodes and said sensor electrodes are each defined as a surface portion comprising a connecting contact to each of said first and said additional current electrodes and said sensor electrodes, at least a part of each of said connecting contacts to said first and said additional current electrodes being a metallic contact disposed at said major surface and in intimate contact with said major surface.

9. The integratable Hall element as claimed in claim 1 or claim 2 or claim 3 or claim 4 or claim 5 or claim 6, wherein at least some of said first and said additional current electrodes and said sensor electrodes are each defined as a surface portion comprising a connecting contact to each of said first and said additional current electrodes and said sensor electrodes, at least said connecting contacts to said sensor electrodes being a metallic contact disposed at said major surface and a diffusion contact below said metallic contact and in intimate contact with said metallic contact, said diffusion contacts being semiconductor material of the opposite conductivity type as that of said semiconductor layer, said diffusion contacts being diffused into said semiconductor layer.

23. The integratable Hall element as claimed in claim 1 or claim 2 or claim 3 or claim 4 or claim 5 or claim 6 or claim 10 or claim 11 or claim 12 or claim 14 or claim 15 or claim 16, wherein said major surface is substantially covered with an electrically conducting gate layer, said electrically conducting gate layer being provided with a connecting contact, and a thin electrically insulating passivation layer separating said gate layer from said semiconductor layer.

2. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes, the part of said semiconductor layer disposed below said first current electrode and said first and second sensor electrodes forming an active portion of said Hall element;

a plurality of additional current electrodes spaced away from said first current electrode, wherein said additional current electrodes are disposed approximately symmetrically about a plane surface which passes through said first current electrode at approximately a right angle to the line connecting said first and second sensor electrodes, and wherein at least some of said additional current electrodes are each defined by at least one relatively large electrically conducting surface portion symmetrically disposed about said plane surface;

at least one electrically insulated connecting contact disposed on said major surface exteriorly of said active portion; and

at least one electric ohmic conducting connection;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface;

said relatively large electrically conducting surface portion being a buried layer disposed substantially parallel to said major surface in said semiconductor layer below said active portion of said Hall element, said one electric ohmic conducting connection connecting said connecting contact with said buried layer;

said semiconductor layer being of a first conductivity type; and

said buried layer and said conducting connection being comprised of a strongly doped semiconductor material which is of the same conductivity type as said semiconductor layer.

3. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes, the part of said semiconductor layer disposed below said first current electrode and said first and second sensor electrodes forming an active portion of said Hall element;

a plurality of additional current electrodes spaced away from said first current electrode, wherein at least some of said additional current electrodes forming a first group of electrodes are disposed approximately symmetrically about an axis which passes through said first current electrode at approximately a right angle to said major surface, and wherein the remaining of said additional current electrodes forming a second group of electrodes are disposed approximately symmetrically about a plane surface which passes through said first current electrode at approximately a right angle to the line connecting said first and second sensor electrodes;

at least one electrically insulated connecting contact disposed on said major surface exteriorly of said active portion; and

at least one electric ohmic conducting connection;

at least some of said additional current electrodes of one of said both groups of electrodes being each defined by at least one relatively large electrically conducting surface portion symmetrically disposed about said axis or said plane surface;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface;

said relatively large electrically conducting surface portion being a buried layer disposed substantially parallel to said major surface in said semiconductor layer below said active portion of said Hall element, said one electric ohmic conducting connection connecting said connecting contact with said buried layer;

said semiconductor layer being of a first conductivity type; and

said buried layer and said conducting connection being comprised of a strongly doped semiconductor material which is of the same conductivity type as said semiconductor layer.

4. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes; and

a plurality of additional current electrodes spaced away from said first current electrode, wherein said additional current electrodes are disposed approximately symmetrically about an axis which passes through said first current electrode at approximately a right angle to said major surface, and wherein at least some of said additional current electrodes are each defined by at least one relatively large electrically conducting surface portion symmetrically disposed about said axis;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface; and

said relatively large electrically conducting surface portion being formed in the shape of an annular equipotential diffusion layer at said major surface so as to surround at least said first current electrode and said first and second sensor electrodes, said first current electrode being disposed approximately in the center of said annular equipotential diffusion layer.

5. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes; and

a plurality of additional current electrodes spaced away from said first current electrode, wherein said additional current electrodes are disposed approximately symmetrically about a plane surface which passes through said first current electrode at approximately a right angle to the line connecting said first and second sensor electrodes, and wherein at least some of said additional current electrodes are each defined by at least one relatively large electrically conducting surface portion symmetrically disposed about said plane surface;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrodes and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface; and

said relatively large electrically conducting surface portion being formed in the shape of an annular equipotential diffusion layer at said major surface so as to surround at least said first current electrode and said first and second sensor electrodes, said first current electrode being disposed approximately in the center of said annular equipotential diffusion layer.

6. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes; and

a plurality of additional current electrodes spaced away from said first current electrode, wherein at least some of said additional current electrodes forming a first group of electrodes are disposed approximately symmetrically about an axis which passes through said first current electrode at approximately a right angle to said major surface, and wherein the remaining of said additional current electrodes forming a second group of electrodes are disposed approximately symmetrically about a plane surface which passes through said first current electrode at approximately a right angle to the line connecting said first and second sensor electrodes;

at least some of said additional current electrodes of one of both groups of electrodes being each defined by at least one relatively large electrically conducting surface portion symmetrically disposed about said axis or said plane surface;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface; and

said relatively large electrically conducting surface portion being formed in the shape of an annular equipotential diffusion layer at said major surface so as to surround at lest said first current electrode and said first and second sensor electrodes, said first current electrode being disposed approximately in the center of said annular equipotential diffusion layer.

10. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes;

a plurality of additional current electrodes spaced away from said first current electrode, wherein said additional current electrodes are disposed approximately symmetrically about an axis which passes through said first current electrode at approximately a right angle to said major surface, and wherein at least some of said additional current electrodes are each defined by at least one relatively large electrically conducting surface portion symmetrically disposed about said axis; and

an annular barrier zone being diffused to a predetermined first depth into said major surface;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface;

said relatively large electrically conducting surface portion being formed in the shape of an annular equipotential diffusion layer at said major surface; and

said annular barrier zone surrounding at least said first current electrode and said first and second sensor electrodes and being surrounded itself by said annular equipotential diffusion layer, said first current electrode being approximately located at the center of said annular equipotential diffusion layer and of said annular barrier zone.

13. The integratable Hall element as claimed in claim 4 or claim 5 or claim 6 or claim 10 or claim 11 or claim 12, wherein said semiconductor layer is of a first conductivity type, and said annular equipotential diffusion layer is comprised of a strongly doped semiconductor material which is of the same conductivity type as said semiconductor layer.

17. The integratable Hall element as claimed in claim 10 or claim 11 or claim 12 or claim 14 or claim 15 or claim 16, wherein said semiconductor layer is of a first conductivity type and wherein said annular barrier zone is a semiconductor material of a conductivity type opposite to that of said semiconductor layer.

18. The integratable Hall element as claimed in claim 10 or claim 11 or claim 12 or claim 14 or claim 15 or claim 16, wherein said annular barrier zone has an annular longitudinal shape, whose longitudinal axis extends approximately parallel to said straight line connecting said first and second sensor electrodes.

19. The integratable Hall element as claimed in claim 10 or claim 11 or claim 12 or claim 14 or claim 15 or claim 16, wherein at least some of said first and said additional current electrodes and said sensor electrodes are each defined as a surface portion comprising a semiconductor material, further comprising a connecting contact to each of said first and said additional current electrodes and said sensor electrodes, at least a part of each of said connecting contacts being a metallic contact disposed at said major surface and a diffusion contact below said metallic contact and in intimate contact with said metallic contact, said diffusion contacts being strongly doped semiconductor material of the same conductivity type as that of said semiconductor layer, said diffusion contacts being diffused into said semiconductor layer to a predetermined second depth, said predetermined first depth exceeding said predetermined second depth.

20. The integratable Hall element as claimed in claim 10 or claim 11 or claim 12 or claim 14 or claim 15 or claim 16, wherein at least some of said first and said additional current electrodes and said sensor electrodes are each defined as a surface portion comprising a connecting contact to each of said first and said additional current electrodes and said sensor electrodes, at least a part of each of said connecting contacts to said first and said additional current electrodes being a metallic contact disposed at said major surface and in intimate contact with said major surface.

21. The integratable Hall element as claimed in claim 10 or claim 11 or claim 12 or claim 14 or claim 15 or claim 16, wherein at least some of said first and said additional current electrodes and said sensor electrodes are each defined as a surface portion comprising a connecting contact to each of said first and said additional current electrodes and said sensor electrodes, at least said connecting contacts to said sensor electrodes being a metallic contact disposed at said major surface and a diffusion contact below said metallic contact and in intimate contact with said metallic contact, said diffusion contacts being semiconductor material of the opposite conductivity type as that of said semiconductor layer, said diffusion contacts being diffused into said semiconductor layer to a predetermined second depth, said predetermined first depth exceeding said predetermined second depth.

22. The integratable Hall element as claimed in claim 10 or claim 11 or claim 12 or claim 14 or claim 15 or claim 16, wherein said Hall element has a controllable sensitivity and wherein said barrier zone has a connecting contact adapted to have an electrical voltage applied thereto, the polarity of said electrical voltage being selectable to reverse bias of the P/N junction formed by said semiconductor layer and said annular barrier zone, said electrical voltage being selectable to control said sensitivity.

11. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electrical Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes;

a plurality of additional current electrodes spaced away from said first current electrode, wherein said additional current electrodes are disposed approximately symmetrically about a plane surface which passes through said first current electrode at approximately a right angle to the line connecting said first and second sensor electrodes, and wherein at least some of said additional current electrodes are each defined by at least one relatively large electrically conducting surface portion symmetrically disposed about said plane surface; and

an annular barrier zone being diffused to a predetermined first depth into said major surface;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface;

said relatively large electrically conducting surface portion being formed in the shape of an annular equipotential diffusion layer at said major surface;

said annular barrier zone surrounding at least said first current electrode and said first and second sensor electrodes and being surrounded itself by said annular equipotential diffusion layer, said first current electrode being approximately located at the current of said annular equipotential diffusion layer and of said annular barrier zone.

12. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes;

a plurality of additional current electrodes spaced away from said first current electrode, wherein at least some of said additional current electrodes forming a first group of electrodes are disposed approximately symmetrically about an axis which passes through said first current electrode at approximately a right angle to said major surface, and wherein the remaining of said additional current electrodes forming a second group of electrodes are disposed approximately symmetrically about a plane surface which passes through said first current electrode at approximately a right angle to the line connecting said first and second sensor electrodes; and

an annular barrier zone being diffused to a predetermined first depth into said major surface;

at least some of said additional current electrodes of one of both groups of electrodes being each defined by at least one relatively large electrically conducting surface portion symmetrically disposed about said axis or said plane surface;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface;

said relatively large electrically conducting surface portion being formed in the shape of an annular equipotential diffusion layer at said major surface; and

said annular barrier zone surrounding at least said first current electrode and said first and second sensor electrodes and being surrounded itself by said annular equipotential diffusion layer, said first current electrode being approximately located at the center of said annular equipotential diffusion layer and of said annular barrier zone.

14. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes;

a plurality of additional current electrodes spaced away from said first current electrode, wherein said additional current electrodes are disposed approximately symmetrically about an axis which passes through said first current electrode at approximately a right angle to said major surface; and

an annular barrier zone being diffused to a predetermined first depth into said major surface and surrounding at least said first current electrode and said first and second sensor electrodes, said first current electrode being approximately located at the center of said annular barrier zone;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface.

15. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and second sensor electrodes; and

a plurality of additional current electrodes spaced away from said first current electrode, wherein said additional current electrodes are disposed approximately symmetrically about a plane surface which passes through said first current electrode at approximately a right angle to the line connecting said first and second sensor electrodes; and

an annular barrier zone being diffused to a predetermined first depth into said major surface and surrounding at least said first current electrode and said first and second sensor electrodes, said first current electrode being approximately located at the center of said annular barrier zone;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface.

16. An integratable Hall element comprising:

a semiconductor layer having a major surface and having a thickness;

first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes;

a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes; and

a plurality of additional current electrodes spaced away from said first current electrode, wherein at least some of said additional current electrodes forming a first group of electrodes are disposed approximately symmetrically about an axis which passes through said first current electrode at approximately a right angle to said major surface, and wherein the remaining of said additional current electrodes forming a second group of electrodes are disposed approximately symmetrically about a plane surface which passes through said first current electrode at approximately a right angle to the line connecting said first and second sensor electrodes;

an annular barrier zone being diffused to a predetermined first depth into said major surface and surrounding at least said first current electrode and said first and second sensor electrodes, said first current electrode being approximately located at the center of said annular barrier zone;

the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface.