Dry etching method and method for prevention of low temperature post etch deposit

  • US 4,992,137 A
  • Filed: 07/18/1990
  • Issued: 02/12/1991
  • Est. Priority Date: 07/18/1990
  • Status: Expired due to Term
First Claim
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1. A method of dry etching a layer on a semiconductor substrate wafer within a reactor, the reactor having cooling means for cooling a wafer positioned within the reactor, the method comprising:

  • positioning a wafer within the reactor;

    injecting at least one gas to within the reactor, the one gas being reactive when in a plasma state with material on the wafer;

    applying a preselected amount of electrical power to the reactor with the wafer therein for a preselected amount of time to selectively obtain a desired dry etch of the layer;

    stopping injection of the at least one gas to within the reactor at the completion of the desired etch while some minimum amount of electrical power is being applied to the reactor to maintain gases present therein in the plasma state;

    injecting another gas into the reactor while injection of the one gas has been stopped and while the minimum amount of electrical power is being applied to the reactor, the other gas being substantially inert to reaction with material on the wafer; and

    continuing injecting the substantially inert gas for a time sufficient to substantially purge the reactor of the at least one reactive gas while the minimum amount of electrical power is being applied.

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