Crimp-type semiconductor device having non-alloy structure

• US 4,996,586 A
• Filed: 10/17/1989
• Issued: 02/26/1991
• Est. Priority Date: 10/19/1988
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Iwasaki, Masami, Fujiwara, Takashi, Matsuda, Hideo, Kitagawa, Mitsuhiko, Yokota, Yoshio, Watanuki, Kazuo
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): CLARK, SHEILA V
• Application Number:
  US07/422,900
• Time in Patent Office: 497 Days
• Field of Search: 357/79, 357/76, 357/77, 357/74, 357/68, 357/38, 357/75
• US Class Current: 257/726
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 23/4824 Pads with extended contours, e.g. grid structure, branch structure, finger structure
• CPC Class Codes: H01L 24/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/10157 at the active surface
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/13033 TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
• CPC Class Codes: H01L 2924/351 Thermal stress

Abstract

A crimp-type semiconductor device having a non-alloy structure according to this invention has a silicon pellet including a plurality of cathode electrodes and a plurality of gate electrodes arranged to be alternately staggered with the cathode electrodes at the cathode side, and an anode electrode at the anode side. The cathode electrodes are crimped by a cathode electrode post via an electrode member constituted by a thin soft-metal plate and a hard metal plate. The anode electrode is crimped by an anode electrode post via an electrode member. Opposing surfaces of the electrodes, the electrode members, and the electrode posts are not bonded to but crimped in contact with each other. The electrode members are formed to cover the entire surfaces of the cathode electrode and the anode electrode, respectively, and the entire surface of the cathode electrode post and the anode electrode post, respectively. The electrode members and the electrode posts are positioned with respect to each other by positioning guides, respectively.

Claims

1. A crimp-type semiconductor device comprising:

a semiconductor pellet having first and second major surfaces and having main electrodes formed on said first and second major surfaces, and a control electrode formed on at least one of said first and second major surfaces, said main electrodes and said control electrode being arranged on one of said major surfaces so as to alternately staggered with each other;

first and second electrode members, each having first and second opposing surfaces, arranged such that said first opposing surfaces are not bonded to but crimped in contact with said first and second major surfaces, respectively, each of said first opposing surfaces being formed to cover the entire surface of said main electrode;

first and second electrode post means, arranged to be not bonded to but crimped in contact with said second opposing surfaces of said first and second electrode members, respectively, for crimping said main electrodes formed on said first and second major surfaces via said first and second electrode members, respectively, the entire surfaces of said first and second electrode post means being covered with said second opposing surfaces of said first and second electrode members, respectively; and

positioning guide means, arranged close to at least one of an inner periphery and an outer periphery of at least one of said first and second electrode members with respect to at least one of said first and second electrode post means crimped against said electrode member.

2. A device according to claim 1, wherein said first and second opposing surfaces of each of said first and second electrode members have the same size.

3. A device according to claim 1, wherein at least one of said first and second electrode members is constituted by a first metal member opposing one of said first and second major surfaces, and a second metal member opposing one of said first and second electrode post means.

4. A device according to claim 3, wherein said first metal member is constituted by a soft metal member, and said second metal member is constituted by a hard metal member.

5. A device according to claim 1, wherein said first and second electrode members are constituted by hard metal members.

6. A device according to claim 1, wherein outer diameters of said main electrodes formed on said first major surface of said semiconductor pellet and said main electrodes formed on said second major surface thereof, outer diameters of said first opposing surface of said first electrode member and said first opposing surface of said second electrode member, and outer diameters of said first electrode post means and said second electrode post means are equal to each other, respectively.

7. A device according to claim 1, wherein said positioning means have first proximity portions located close to at least one of said first and second electrode members and second proximity portions located close to at least one of said first and second electrode post means, said first and second proximity portions having different diameters to form a step therebetween.

8. A device according to claim 1, wherein said positioning means comprise a metal.

9. A device according to claim 1, wherein said positioning means comprise an insulating material.

10. A device according to claim 1, wherein said positioning means are located close to outer circumferential surfaces of at least one of said first and second electrode members and a corresponding one of said first and second electrode post means.

11. A device according to claim 1, wherein said positioning means are located close to inner circumferential surfaces of at least one of said first and second electrode members and a corresponding one of said first and second electrode post means.

12. A device according to claim 1, wherein said positioning means are located close to inner circumferential surfaces of said first electrode member and said first electrode post means, and close to outer circumferential surfaces of said second electrode member and said second electrode post means, respectively.

13. A device according to claim 1, wherein said positioning means are located close to outer circumferential surfaces of said first electrode member and said first electrode post means, and close to inner circumferential surfaces of said second electrode member and said second electrode post means, respectively.

14. A device according to claim 1, wherein said semiconductor pellet has said main electrodes and said control electrode, formed on at least one of said first and second major surfaces on different planes.

15. A device according to claim 1, wherein said semiconductor pellet has said main electrodes and said control electrode, formed on at least one of said first and second major surfaces on the same plane.