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Symmetrical variable impedance apparatus employing MOS transistors

  • US 5,021,747 A
  • Filed: 11/22/1989
  • Issued: 06/04/1991
  • Est. Priority Date: 11/22/1989
  • Status: Expired due to Term
First Claim
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1. Apparatus for providing a linear controllable impedance between first and second terminals comprising:

  • a P-channel field effect transistor (FET) and an N-channel FET, each FET having a source to drain path and a gate electrode with the source to drain path of each FET connected between said first and second terminals;

    first means, including first comparator means responsive to the signal at said first terminal having a first polarity and being greater than a given amplitude, coupled to the gate electrode of said P-FET for applying a first control signal to said gate electrode of said P-FET for controlling the impedance of said P-FET, andsecond means, including a second comparator means responsive to the signal at said first terminal having a polarity opposite said first polarity and being greater than a given amplitude, coupled to the gate electode of said N-FET for applying a second control signal to said gate electrode of said N-FET for controlling the impedance of said N-FET, to thereby provide a linear impedance between said first and second terminals.

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