Liquid crystal active-matrix display device

• US 5,028,122 A
• Filed: 04/20/1989
• Issued: 07/02/1991
• Est. Priority Date: 04/20/1988
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hamada, Hiroshi, Sakono, Ikuo, Hishida, Tadanori
• Primary Examiner(s): Miller, Stanley D.
• Assistant Examiner(s): MAI, HUY KIM
• Application Number:
  US07/340,777
• Time in Patent Office: 803 Days
• Field of Search: 350/336, 350/333, 350/334, 350/339 R, 340/784, 340/719, 357/4
• US Class Current: 349/38
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode

Abstract

A liquid crystal active-matrix display device is disclosed in which the edge portion of each of the gate electrodes overlaps the edge portion of each of the picture element electrodes to form an additional capacitor. The gate electrodes are made of tantalum, and a first insulating film of tantalum pentoxide and a second insulating film of silicon nitride are disposed in a gap between each of the gate electrodes and each of the picture element electrodes. This thereby provides additional capacitors with a large capacity at a high yield, with little affect on other processes.

Claims

1. A liquid-crystal active-matrix display device comprising:

picture element electrodes; and

thin film transistors, each including a gate, source and drain electrode and each corresponding to one of said picture element electrodes, for switching voltages applied to each corresponding picture element electrode;

said thin film transistors and corresponding picture element electrodes being arranged in a matrix format on a substrate;

said thin film transistors being connected to gate lines and source lines at intersections thereof, the gate lines each connecting a plurality of said gate electrodes and the source lines each connecting a plurality of said source electrodes;

said drain electrodes being connected to said picture element electrodes;

said gate electrodes and non-corresponding adjacent picture element electrodes overlapping at edge portions thereof to form additional capacitors, with a first insulating film and a second insulating film being interposed therebetween.

2. A liquid-crystal active-matrix display device according to claim 1, wherein the gate electrodes are made of tantalum, the first insulating film is made of tantalum pentoxide the second insulating film is made of silicon nitride.

3. A liquid-crystal active-matrix display device according to claim 1, wherein each gate line is made in one piece connecting each corresponding gate electrodes, and wherein each source line is made in one piece connecting each corresponding source electrode.

4. A liquid crystal active-matrix display device according to claim 1, wherein the edge portion of the gate electrode which overlays the picture element electrode functions as an additional-capacitor electrode for an adjacent picture element electrode.

5. A liquid crystal active-matrix display device according to claim 1, wherein the first insulating film is an oxidized part of each gate electrode.

6. A liquid crystal active-matrix display device according to claim 1, wherein the second insulating film is a chemically vapor deposited part of the substrate.

7. A device, as claimed in claim 1, wherein said gate electrode is made of a non-transparent material.

8. A device, as claimed in claim 3, wherein each gate line overlaps the periphery of a plurality of adjacent picture element electrodes to thereby minimize light from leaking from each of said picture element electrodes.

9. A liquid crystal active-matrix display apparatus comprising:

a plurality of parallel source lines disposed on a substrate in a first direction;

a plurality of parallel gate lines disposed on said substrate in a second direction, perpendicular to said first direction;

a plurality of thin film transistors, each including a gate, source, and drain electrode, disposed at intersections of said parallel gate lines and said parallel source lines;

a plurality of picture element electrodes disposed on said substrate in a matrix fashion so as to each correspond to one of said plurality of thin film transistors, each of said thin film transistors witching applied voltages to drive each of said corresponding picture element electrodes;

said gate electrodes, formed of a non-transparent material, of each of said transistors, and a non-corresponding adjacent picture element electrode overlapping at edge portions thereof to thereby form an additional capacitor electrode at said overlapped edge portions.

10. An apparatus, as claimed in claim 9, further comprising first and second insulating layers, separating each said overlapped edge portion of said picture element electrodes and gate electrodes.

11. An apparatus, as claimed in claim 10, wherein the gate electrodes are made of tantalum, the first insulating film is made of tantalum pentoxide, and the second insulating film is made of silicon nitride.

12. An apparatus, as claimed in claim 9, wherein each gate line is made in one piece connecting a plurality of corresponding gate electrodes, and wherein each source line is made in one piece connecting a plurality of corresponding source electrodes.

13. An apparatus, as claimed in claim 10, wherein the first insulating film is an oxidized part of each gate electrode.

14. An apparatus, as claimed in claim 10, wherein the second insulating film is a chemically vapor deposited part of the substrate.

15. An apparatus, as claimed in claim 12, wherein each gate line overlaps the periphery of a plurality of adjacent picture element electrodes to thereby minimize light from leaking from each of said picture element electrodes.