Planar array of vertical-cavity, surface-emitting lasers

• US 5,031,187 A
• Filed: 02/14/1990
• Issued: 07/09/1991
• Est. Priority Date: 02/14/1990
• Status: Expired due to Term

• Current Assignee: TTI Inventions A LLC (Intellectual Ventures LLC)
• Original Assignee: Bell Communications Research, Inc. (Telefonaktiebolaget LM Ericsson)
• Inventors: Orenstein, Meir, Von Lehmen, Ann C.
• Primary Examiner(s): Epps, Georgia
• Application Number:
  US07/480,117
• Time in Patent Office: 510 Days
• Field of Search: 372/50, 372/45, 372/99
• US Class Current: 372/50.11
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A planar array of vertical-cavity, surface-emitting diode lasers, and its method of making. The device comprises an active region having a quantum well region disposed between two Bragg reflector mirrors separated by a wavelength of the emitting laser. A large area of this structure is grown on a substrate and then laterally defined by implanting conductivity-reducing ions into the upper mirror in areas around the lasers. Thereby, the laterally defined laser array remains planar. Such an array can be made matrix-addressable by growing the structure on a conducting layer overlying an insulating substrate. After growth of the vertical structure, an etch or further implantation divides the conducting layer into strips forming bottom column electrodes. Top row electrodes are deposited in the perpendicular direction over the laterally defined top mirrors.

Claims

1. A surface-emitting laser array, comprising:

a vertical semiconductor structure formed over a conducting crystalline body, said structure including

a lower Bragg reflector for at least partially reflecting light at a wavelength,

an active region for emitting said light at said wavelength, and

an upper Bragg reflector for at least partially reflecting said light at said wavelength and separated from said lower Bragg reflector by a distance having a predetermined relationship to said wavelength;

an array of electrical electrodes formed over said upper Bragg reflector for establishing electrical paths from said electrodes to said conducting body; and

a dopant for reducing an electrical conductance of said semiconductor structure introduced into a current confining region extending substantially from an upper surface of said upper Bragg reflector to said active region in areas between said electrodes.

2. A laser array as recited in claim 1, wherein said active region comprises at least one quantum well.

3. A laser array as recited in claim 1, wherein said current confining region surrounds a conducting region of said upper Bragg reflector below a respective one of said electrodes having a first cross-sectional area near a top of said upper Bragg reflector and a second cross-sectional area near a bottom of said upper Bragg reflector substantially smaller than said first cross-sectional area.

4. A laser array as recited in claim 1, wherein said dopant comprises protons.

5. A laser array as recited in claim 1, wherein said conducting crystalline body comprises an insulating substrate and a conducting crystalline layer formed thereover.

6. A laser array as recited in claim 5, wherein said conducting layer is separated into parallel stripes separated by a non-conductor, said array further comprising electrical contacts applied to upper surfaces of said conducting layer in respective ones of said parallel stripes.

9. A surface-emitting laser array as recited in claim 1, wherein said crystalline body comprises a substrate unpatterned between a first portion underlying said current confining region and a second portion surrounded by said first portion.

7. A laser array, comprising:

an insulating substrate;

a conducting, crystalline layer formed on said substrate;

parallel, non-conducting channels separating stripes of said conducting, crystalline layer;

a two-dimensional array of vertical-cavity, surface-emitting semiconductor diode lasers formed on said conducting, crystalline layer and arranged in one-dimensional arrays of said lasers on respective ones of said stripes; and

a plurality of parallel conducting leads arranged perpendicularly to said channels and each electrically contacting a plurality of said lasers.

8. A laser array as recited in claim 7, wherein each of said diode laser comprises a lower Bragg reflector, an active region and an upper Bragg reflector separated from said lower Bragg reflector by a distance having a predetermined relationship to a wavelength of light emitted by said active region, said laser array further comprising a dopant for reducing an electrical conductance introduced into a material surrounding said upper Bragg reflector.