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Method of making a surface emitting semiconductor laser

  • US 5,034,344 A
  • Filed: 06/18/1990
  • Issued: 07/23/1991
  • Est. Priority Date: 07/17/1989
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a vertically oriented semiconducting optical structure, comprising the steps of:

  • epitaxially forming on a crystalline body a vertical structure comprising a plurality of semiconductive layers of differing compositions, said vertical structure including an active region having an effective bandgap, a first interference mirror and another mirror substantially reflecting light of a wavelength corresponding to said bandgap, an optical distance between said interference mirror and said another mirror being in a predetermined relationship with said wavelength; and

    vertically etching with an ion beam comprising ions heavier than argon through a portion of said vertical structure including at least said active region to form an isolated pillar of at least some of said semiconductive layers.

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