Imaging system
First Claim
1. In combination for providing a display of a visual image,a plurality of diodes disposed in contiguous relationships to define an array, each of the diodes constituting a semi-conductor having n and p layers disposed relative to each other to define a junction, each of the semi-conductors being constructed to emit light at the jnction between the n and p layers when a particular voltage is applied between the n and p layers in the semi-conductor to reverse bias the diode, andmeans for applying the particular voltage between the n and p layers in individual ones of the diodes in the array to reverse bias the individual diodes in accordance with the visual image to be displayed on the array.
2 Assignments
0 Petitions
Accused Products
Abstract
A plurality of semi-conductor diodes disposed in an array may be constructed to emit light when subjected to a particular voltage. This voltage reversely biases the semi-conductor diodes to break down the semi-conductor diodes and to provide for the emission of light upon breakdown. The breakdown occurs at the junction between a pair of electrodes in each semi-conductor diode. One of the electrodes may be an n electrode and the other electrode may be a p electrode. To break down the diode, a positive voltage (e.g. 3-5 volts) may be applied to the n electrode and a ground voltage may be applied to the p electrode. The diodes are so small that an array of 1024×1024 diodes can be disposed in a space approximately 0.4" square to act as pixels. The diodes may be scanned, as in a raster scan, preferably on a repetitive basis. During such scan, individual ones of the diodes receive the breakdown voltage in representation of a visual image to provide a visual display of the image in the pixels defined by the diodes. The emitted light for each pixel is visible at the junction between the p electrode and the n electrode in the diode representing such pixel. The n electrode may be shaped, as in a tear drop, to facilitate the production of the light at such junction, which may be at the pointed end of the tear drop. The light may be formed by the emission of photons when electrons are momentarily trapped in an oxide layer above the junction and then fall back to ground.
24 Citations
32 Claims
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1. In combination for providing a display of a visual image,
a plurality of diodes disposed in contiguous relationships to define an array, each of the diodes constituting a semi-conductor having n and p layers disposed relative to each other to define a junction, each of the semi-conductors being constructed to emit light at the jnction between the n and p layers when a particular voltage is applied between the n and p layers in the semi-conductor to reverse bias the diode, and means for applying the particular voltage between the n and p layers in individual ones of the diodes in the array to reverse bias the individual diodes in accordance with the visual image to be displayed on the array.
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7. In combination for providing a display of a visual image,
a plurality of diodes disposed in contiguous relationship to define an array, each of the diodes constituting a semi-conductor having n and p layers disposed relative to each other to define a junction, each of the semi-conductors being constructed to emit light at the junction between the n and p layers when a particular voltage is applied between the n and p layers in the semi-conductor, and means for applying the particular voltage between the n and p layers in individual ones of the diodes in the array in accordance with the visual image to be displayed on the array, each of the diodes being constructed to provide an n type body, a p layer on the body, an n layer on the p layer and a p+ layer partially on the body and partially on the n layer and the junction being between the p+ layer and the n layer.
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11. In combination for providing a display of a visual image,
an array of semi-conductors each having an n layer and a p layer and a junction between the n and p layers and each constructed to emit white light at such junction when subjected to a particular voltage between the n layer and the p layer to reverse bias such semi-conductor, means for providing a scan of the semi-conductors in the array to provide for the activation of successive semi-conductors in the array, and means for providing for the introduction of the particular voltage between the n and p layers in individual ones of the semi-conductors in the array to obtain the emission of white light from such individual ones of such semi-conductors at the junction between the n and p layers in such individual semi-conductors during such scan in accordance with the visual image to be displayed.
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16. In combination for providing a display of a visual image,
an array of semi-conductor diodes, each diode being constructed to break down when subjected to a particular reverse bias voltage cross the diode and to become illuminated upon breakdown, the diodes in the array being disposed in a particular relationship to define rows and columns, means for introducing a first voltage to the diodes in an individual column in the array in accordance with the visual image, and means for introducing a second voltage to the diodes in an individual row in the array to obtain the production of the particular reverse bias voltage across the diode common to the individual column and the individual row for breaking down the diode.
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24. In combination for emitting light,
an integrated circuit chip made from a semi-conductive material constituting an n type, a p layer formed on the integrated circuit chip, an n layer formed on the integrated circuit chip in a particular relationship to the p layer to define a junction with the p layer, a p+ layer disposed partially on the p layer and partially on the n layer to define a junction with the n layer for the emission of visible light from the junction between the p layer and the n layer upon the production of a particular voltage between the p layer and the n layer, first terminal means formed on the integrated circuit chip substantially at the position of the p layer to contact the p+ layer and the p layer and made from an electrically conductive material, and second terminal means formed on the integrated circuit chip at the position of the n layer and made from an electrically conductive material, and means for introducing voltages to the first and second terminal means to obtain the emission of the visible light at the junction between the p and n layers.
Specification