Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer

  • US 5,070,384 A
  • Filed: 04/12/1990
  • Issued: 12/03/1991
  • Est. Priority Date: 04/12/1990
  • Status: Expired due to Term
First Claim
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1. An electrically programmable antifuse element disposed on a semiconductor substrate in an integrated circuit comprising:

  • a first electrode,a dielectric layer disposed over said first electrode,an amorphous silicon layer disposed over said dielectric layer,a second electrode disposed over said layer of amorphous silicon.

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