Heterojunction bipolar transistor with a thin silicon emitter

  • US 5,105,250 A
  • Filed: 10/09/1990
  • Issued: 04/14/1992
  • Est. Priority Date: 10/09/1990
  • Status: Expired due to Term
First Claim
Patent Images

1. A heterojunction bipolar transistor, comprising:

  • a collector;

    a silicon-germanium base disposed on the collector;

    a thin silicon emitter disposed on the silicon-germanium base, wherein a metallurgical junction is maintained at the silicon-germanium base and the thin silicon emitter interface; and

    a polysilicon layer disposed on the thin silicon emitter.

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