Semiconductor device protection circuit

• US 5,119,265 A
• Filed: 04/02/1990
• Issued: 06/02/1992
• Est. Priority Date: 04/02/1990
• Status: Expired due to Term

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Qualich, John R., Pigott, John M., Robb, Stephen P.
• Primary Examiner(s): Stephan, Steven L.
• Assistant Examiner(s): Berhane, Adolf D.
• Application Number:
  US07/502,716
• Time in Patent Office: 792 Days
• Field of Search: 361/18, 361/79, 361/91, 361/103, 361/111, 323/907
• US Class Current: 361/103
• CPC Class Codes: H03K 17/08 Modifications for protecting switching circuit against overcurrent or overvoltage
• CPC Class Codes: H03K 17/0822 in field-effect transistor switches
• CPC Class Codes: H03K 17/165 by feedback from the output circuit to the control circuit
• CPC Class Codes: H03K 2017/0806 against excessive temperature
• CPC Class Codes: H03K 2217/0036 Means reducing energy consumption
• CPC Class Codes: Y10S 323/907 Temperature compensation of semiconductor

Abstract

FET protection circuit (10; 100) senses the temperature of a FET (11) and, via a control circuit (24), increases FET conduction in response to sensed FET temperature exceeding a high temperature threshold (160° C.) close to the maximum rated junction temperature (175° C.) of the FET. This allows the FET to survive excessive drain-to-source voltages which occur during load dump conditions even when load dump is sensed by a zener diode (26) which initially turns on the FET. During load dump after a zener diode (26) turns on the FET, in response to sensing excessive FET temperature the FET is turned in harder so as to reduce the drain-to-source voltage (V_DS) and minimize power dissipation during load dump thereby protecting the FET. Normal overcurrent and maximum temperture turn off circuitry (44, 33, 60-63) is effectively overridden by high temperature threshold turn-on circuitry (50). Preferably, a majority of the control circuit (24) is provided on an integrated circuit, but an external resistor (31) allows effective adjustment of two temperature thresholds (150° C., 160° C.) above which control signals provided to the FET will be modified.

Claims

1. A semiconductor device protection circuit comprising:

semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device;

temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and

control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith;

wherein the improvement comprises said control means including means for protecting said device by increasing on conduction of said device in response to said temperature sense signal indicating the temperature of the device exceeds a first high temperature threshold close to the maximum rated junction temperature of said device.

2. A semiconductor device protection circuit according to claim 1 wherein said protecting means includes means for decreasing power dissipation of said device during load dump by increasing on conduction of said device during load dump in response to said sensed device temperature exceeding said first high temperature threshold.

3. A semiconductor device protection circuit according to claim 2 wherein said protecting means includes load dump means for initially detecting load dump and turning said device on in response thereto, said decreasing power dissipation means being operative to reduce device power dissipation at least after said load dump means turns said device on.

4. A semiconductor device protection circuit according to claim 3 wherein said load dump means includes a zener diode connected between one of said output electrodes of said device and said control electrode of said device.

5. A semiconductor device protection circuit according to claim 1 wherein said device first high temperature threshold which is close to the maximum rated junction temperature is above 30°

C. below the maximum rated junction temperature of said device.

6. A semiconductor device protection circuit according to claim 1 wherein said control means includes off means for turning said device off in response to the temperature of said device exceeding a second predetermined high temperature threshold which is lower than said first high temperature threshold, said control means turning said device on if the temperature of said device exceeds both of said second and first high temperature thresholds.

7. A semiconductor device protection circuit according to claim 1 wherein said protecting means includes load dump means for initially detecting load dump and turning said device on in response thereto, said protecting means being operative to reduce power dissipation of said device produced during operation of said load dump means during load dump in response to said sensed device temperature exceeding said first high temperature threshold.

8. A semiconductor device protection circuit comprising:

semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device;

temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and

control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith;

wherein the improvement comprises said control means including load dump means for sensing a load dump condition and turning said device on in response thereto and additional means for determining said control signal such that said device is on in response to said sensed device temperature exceeding a first predetermined high temperature threshold.

9. A semiconductor device protection circuit according to claim 8 wherein said control means also includes off means for turning said device off in response to the temperature of said device exceeding a second predetermined high temperature threshold which is lower than said first high temperature threshold, said control means turning said device on during load dump if the temperature of said device exceeds both of said second and first high temperature thresholds.

10. A semiconductor device protection circuit according to claim 9 wherein said control means off means includes means which receives said external control signal, but prevents said external control signal from determining said device control signal whenever the temperature of said device exceeds said second high temperature threshold.

11. A semiconductor device protection circuit according to claim 10 wherein said control means prevention means comprises logic circuitry which receives as inputs both said external control signal and the output signal of a comparator which output is indicative of said device temperature exceeding said second high temperature threshold.

12. A semiconductor device protection circuit according to claim 8 wherein said load dump means comprises a zener diode connected between one of said output electrodes of said device and said control electrode of said device.

13. A semiconductor device protection circuit comprising:

semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device;

temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and

control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith;

wherein the improvement comprises said control means including load dump means for sensing the occurrence of load dump and turning said device on in response thereto and means for turning said device on harder, thus decreasing power dissipation in said device, during load dump and in response to the sensed temperature of said device exceeding a first predetermined high temperature threshold.

14. A semiconductor device protection circuit according to claim 13 wherein said load dump means comprises a zener diode connected between one of said output electrodes of said device and said control electrode of said device.

15. A semiconductor device protection circuit according to claim 14 wherein said turn on harder means reduces the voltage across said output electrodes during load dump to reduce device power dissipation.

16. A semiconductor device protection circuit according to claim 15 wherein said turn-on harder means includes charge pump means for providing a substantial voltage potential at the control electrode of said device in response to the sensed temperature of said device exceeding said first high temperature threshold.

17. A semiconductor device protection circuit according to claim 16 wherein said control means also includes off means for turning said device off in response to the temperature of said device exceeding a second predetermined high temperature threshold lower than said first high temperature threshold, said control means turning said device on during load dump if the temperature of said device exceeds both second and first high temperature thresholds.

18. A semiconductor device protection circuit according to claim 13 wherein said control means also includes off means for turning said device off in response to the temperature of said device exceeding a second predetermined high temperature threshold lower than said first high temperature threshold, said control means turning said device on during load dump if the temperature of said device exceeds both second and first high temperature thresholds.

19. A semiconductor device protection circuit comprising:

semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device;

temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device;

control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith;

means for sensing said current passing through said semiconductor device and providing a current sense electrical signal having a magnitude indicative thereof; and

said control means including means for turning said device off by modifying said device control signal in response to said current through said device exceeding a maximum overcurrent limit;

wherein the improvement comprises said control means including means for turning said device on in response to the temperature of said device exceeding a first predetermined high temperature threshold despite the current through said device exceeding said maximum overcurrent limit.

20. A semiconductor device protection circuit according to claim 19 wherein said means for turning said device off also includes means for turning said device off in response to the temperature of said device exceeding a second predetermined high temperature threshold lower than said first high temperature threshold, said control means turning said device on if the temperature of said device exceeds both of said second and first high temperature thresholds.

21. A semiconductor device protection circuit according to claim 20 wherein said control means off means includes means which receives said external control signal, but prevents said external control signal from determining said device control signal whenever the temperature of said device exceeds said second high temperature threshold value and whenever the current through said device exceeds said maximum overcurrent limit.

22. A semiconductor device protection circuit according to claim 21 wherein said control means prevention means comprises logic circuitry which receives as inputs said external control signal, the output of a comparator which is indicative of said device temperature exceeding said second high temperature threshold and the output of a comparator which is indicative of said current through said device exceeding said maximum overcurrent limit.

23. A semiconductor device protection circuit comprising:

semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device;

temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and

control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold;

wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal which controls said device through current.

24. A semiconductor device protection circuit according to claim 23 wherein said temperature sense means includes a temperature sensing diode positioned adjacent said semiconductor device and wherein said external adjustment means comprises at least one resistor external to said integrated circuit.

25. A semiconductor device protection circuit according to claim 24 wherein said external resistor is connected in series with said temperature sensing diode and said external resistor has a magnitude which determines said temperature sense signal magnitude.

26. A semiconductor device protection circuit according to claim 24 wherein said external resistor is adjustable.

27. A semiconductor device protection circuit comprising:

semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device;

temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and

control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold;

wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal, and wherein said control means increases on conduction of said device in response to the temperature of said device exceeding said threshold.

28. A semiconductor device protection circuit comprising:

semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device;

temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and

control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold;

wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal, and wherein said control means turns said device off in response to the temperature of said device exceeding said threshold.

29. A semiconductor device protection circuit comprising:

semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device;

temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and

control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold;

wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal, and wherein said control means utilizes said temperature sense signal magnitude to increase on conduction of said device in response to the temperature of said device exceeding a first temperature threshold and to turn said device off in response to the temperature of said device exceeding a second temperature threshold, lower than said first temperature threshold, said external adjustment means determining said temperature sense signal magnitude.

30. A semiconductor device protection circuit according to claim 29 wherein said first and second temperature thresholds are both determined by voltages derived from a resistor divider circuit on said integrated circuit such that said thresholds have a known relationship therebetween.