Semiconductor pressure sensor

• US 5,142,912 A
• Filed: 06/15/1990
• Issued: 09/01/1992
• Est. Priority Date: 06/15/1990
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Frische, Richard H.
• Primary Examiner(s): WOODIEL, DONALD
• Application Number:
  US07/538,956
• Time in Patent Office: 809 Days
• Field of Search: 73/702, 73/727, 73/726, 73/754, 73/DIG. 4, 73/704, 338/4, 338/42
• US Class Current: 73/702
• CPC Class Codes: G01L 9/0016 of a diaphragm
• CPC Class Codes: G01L 9/0019 of a semiconductive element
• CPC Class Codes: G01L 9/06 of piezo-resistive devices

Abstract

Pressure sensor having a silicon diaphragm chip. The diaphragm in the chip is less than 200 mils in diameter and has an ultrasonic resonant frequency that varies with pressure exerted on it. The chip has resistors with values that change with fluctuation of the chip. The changing resistor values are fed to a supporting electronics that detect the resonant frequency of the diaphragm and indicate measurement of the pressure exerted on the diaphragm. The supporting electronics feed back a signal corresponding to the detected resonant frequency for a sensed pressure to a piezoelectric device that drives the diaphragm to sustain its vibration.

Claims

1. A semiconductor pressure sensor comprising:

a header having a pressure port;

a piezoelectric device, having a center port, attached to said header at an end of the pressure port;

a back plate, having an orifice, attached to said piezoelectric device;

a diaphragm chip attached to said plate; and

a cover attached to said header, thereby completing an enclosure of said piezoelectric device, back plate and diaphragm chip in a volume bordered by said header, pressure conducting film and said cover.

2. Sensor of claim 1 wherein:

said diaphragm chip comprises;

a diaphragm having variable displacement responsive to pressure change; and

a plurality of resistors which vary in value upon a variation in displacement of said diaphragm; and

the pressure port of said, header conveys the ambient an electrically to and on through the center port of said piezoelectric device and through the orifice of said back plate to said diaphragm.

3. Sensor of claim 2 wherein:

said diaphragm has a fundamental resonant frequency that varies in proportion to the ambient pressure from the orifice of said back plate; and

said piezoelectric device is a frequency transducer for reinforcing oscillations of said diaphragm at the fundamental resonant frequency.

4. Sensor of claim 3 further comprising supporting electronics means, connected to the plurality of resistors and to said piezoelectric device, for detecting variations in value of said plurality of resistors, determining the fundamental resonant frequency of said diaphragm from the variations and providing a feedback signal to said piezoelectric device.

5. Sensor of claim 4 wherein said supporting electronic means provides an indication of pressure in the pressure port, from the fundamental resonant frequency of said diaphragm.

6. Sensor of claim 5 wherein:

said back plate, said piezoelectric device, said header and said diaphragm chip have similar thermal expansion coefficients; and

said diaphragm chip further comprises a temperature sensing means, connected to said supporting electronics means, for providing temperature compensating signals to said supporting electronics means.

7. Sensor of claim 6 wherein the volume has a pressure less than the ambient pressure.

8. Sensor of claim 7 wherein:

said diaphragm chip is silicon; and

the fundamental resonant frequency is ultrasonic.

9. Sensor of claim 8 wherein said supporting electronics comprises:

an amplifier connected to said plurality of resistors;

an automatic gain control connected to said amplifier;

a frequency counter connected to said automatic gain control;

a first filter connected to said automatic gain control;

a second filter connected to said automatic gain control;

a phase corrector connected to said first and second filters, and to said automatic gain control; and

a signal driver connected to said phase corrector and to said piezoelectric device.

10. A semiconductor pressure sensor comprising:

a monolithic semiconductor chip having a diaphragm that vibrates at a resonant frequency which changes due to a variable displacement of said diaphragm, the displacement being varied in response to a direct application of an ambient pressure to said diaphragm, and having impedance means for indicating the displacement of said diaphragm;

transducer means situated in proximity of said monolithic semiconductor chip for sustaining vibration of said diaphragm;

detector means, connected to said impedance means, for detecting the resonant frequency of said diaphragm; and

supporting electronics means, connected to said transducer means and to said detector means, for converting the resonant frequency of said diaphragm into a measurement of the ambient pressure upon said diaphragm and for providing a feedback signal to drive said transducer means.

11. Semiconductor pressure sensor of claim 10 wherein:

said impedance means comprises at least one resistor implanted in said monolithic semiconductor chip wherein the at least one resistor varies in value in response to a variation of the displacement of said diaphragm; and

said diaphragm has a diameter between about 10 and 200 mils and has a thickness between about 0.1 and 2 mils.