Integrated optical tamper sensor with planar waveguide

• US 5,177,352 A
• Filed: 06/06/1991
• Issued: 01/05/1993
• Est. Priority Date: 06/06/1991
• Status: Expired due to Fees

• Current Assignee: United States Of America As Represented By The Department Of Energy
• Original Assignee: United States Department of Energy
• Inventors: Carson, Richard F., Casalnuovo, Stephen A.
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): Shami, Khaled
• Application Number:
  US07/711,235
• Time in Patent Office: 579 Days
• Field of Search: 250/227.14, 250/222.1, 250/551, 250/22, 340/541, 340/555, 385/2, 385/49
• US Class Current: 250/221
• CPC Class Codes: G01V 8/12 using one transmitter and one receiver
• CPC Class Codes: G08B 29/046 prevention of tampering with detection circuits
• CPC Class Codes: H01L 23/57 Protection from inspection, reverse engineering or tampering
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A monolithic optical tamper sensor, comprising an optical emitter and detector, connected by an optical waveguide and placed into the critical entry plane of an enclosed sensitive region, the tamper sensor having a myriad of scraps of a material optically absorbent at the wavelength of interest, such that when the absorbent material is in place on the waveguide, an unique optical signature can be recorded, but when entry is attempted into the enclosed sensitive region, the scraps of absorbent material will be displaced and the optical/electrical signature of the tamper sensor will change and that change can be recorded.

Claims

1. A tamper sensor comprising:

(a) a light-emitting diode;

(b) a dielectric waveguide adjacent on one end to said light-emitting diode through which light travels;

(c) a photodetector adjacent to said waveguide on an opposite end to receive light traveling through said waveguide;

(d) at least one absorber randomly placed on the surface of said waveguide;

(e) a voltage source to provide voltage to said light-emitting diode; and

(f) means for receiving an output signal from said photodector, said output signal representative of an optical profile obtained from the placement of said absorber on said waveguide;

wherein said light-emitting diode, said dielectric waveguide and said photodetector are integrated using semiconductor materials, and wherein said tamper sensor is placed into a critical entry plane of an enclosed sensitive region such that entry into said enclosed sensitive region will displace said absorber from said position and change said optical profile.

2. The tamper sensor of claim 1, wherein said light-emitting diode is arranged at the center of a hub arrangement and a plurality of said waveguides extend radially outward from said light-emitting diode, and a plurality of said photodetectors, one of said photodetectors positioned at the outer end of said waveguide, with a plurality of said absorbers randomly positioned on said waveguides, resulting in a unique optical profile.

3. The tamper sensor of claim 2, wherein said means for receiving an output signal from said photodetector further comprises an analog to digital converter and means for storing said digital signal, said digital signal representative of an optical signature resulting from the random placement of absorbers onto said waveguide.

4. The tamper sensor of claim 2, wherein said means for receiving an output signal from said photodetector further comprises an analog storage.

5. The tamper sensor of claim 3, wherein said absorbers are adhesively attached to the surface of said dielectric waveguides such that when said critical entry plane is disrupted, said absorbers are irreversibly displaced from said surfaces.

6. The tamper sensor of claim 5, wherein said light-emitting diode and said photodetectors are made from integrated Type III/V semiconductor materials.

7. The tamper sensor of claim 5, wherein said light-emitting diode and said photodetectors are made from integrated Type IV/VI semiconductor materials.

8. The tamper sensor of claim 6, wherein said Type III/V semiconductor materials include GaAs as an optically active region, and Ga_x Al_1-x As as an isolating optical layer.

9. The tamper sensor of claim 5, wherein said dielectric waveguide is from a group that includes polyimide, silicon oxynitride, organic polymers, inorganic films, alumina, and doped silicon dioxide.

10. The tamper sensor of claim 5, wherein said absorber is made from pulverized silicon.

11. A tamper sensor comprising:

(a) a light-emitting diode separated from a photodetector by a dielectric waveguide, said light-emitting diode and said photodetector and said dielectric waveguide monolithically fabricated, said light-emitting diode and said photodetector have a layer of GaAs as an optically active region, and Ga_x Al_1-x As as an isolating optical layers situated above and below said optically active region, said light-emitting diode arranged at the center of a hub arrangement and a plurality of said waveguides extend radially outward from said light-emitting diode, and a plurality of said photodetectors, one of said photodetectors positioned at the outer end of said waveguide;

(b) a plurality of absorbers of varying dimensions randomly and adhesively positioned on said waveguides;

(c) a power source; and

(d) means for receiving and storing an output signal from said photodetector, said output signal representative of an optical profile obtained from the placement of said absorber on said waveguide;

wherein said tamper sensor is placed into a critical entry plane of an enclosed sensitive region such that entry into said enclosed sensitive region will irreversibly displace said absorbers from their positions on said waveguide, and said displacement will cause a change said optical profile.

12. A tamper sensor comprising:

(a) a critical entry plane;

(b) means to generate and to receive at least one optical waveform in an integrated active optical element;

(c) means to couple said optical waveform;

(d) means to randomly alter the optical characteristics of said optical waveform, said randomly alterning means in contact with said means to couple said optical waveform; and

(e) means to record the optical characteristics of said optical waveform before tampering, and after tampering, to compare said optical characteristics altered, by entry into said critical entry plane which disrupts said means to randomly alter the optical characteristics of said optical waveform;

whereby tampering within a critical entry plane is detected where recorded results of said before tampering and after tampering conditions are not the same.