Silicon pressure sensor chip with a shear element on a sculptured diaphragm

• US 5,178,016 A
• Filed: 06/03/1991
• Issued: 01/12/1993
• Est. Priority Date: 11/15/1989
• Status: Expired due to Term

• Current Assignee: Honeywell International Inc.
• Original Assignee: Sensym Inc.
• Inventors: Dauenhauer, Dennis A., Reimann, Hans
• Primary Examiner(s): Ng, Jin F.
• Assistant Examiner(s): SWARTHOUT, BRENT
• Application Number:
  US07/710,253
• Time in Patent Office: 589 Days
• Field of Search: 73/708, 73/721, 73/727, 73/754, 73/DIG. 4, 338/4, 338/42
• US Class Current: 73/727
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm

Abstract

A silicon pressure sensor chip has a shear element on a sculptured diaphragm. The shear element is a piezo-resistive four-terminal resistor which is oriented so as to respond to the in-plane shear stress component in the diaphragm. The shear element is located on a thick shelf which is a portion of the sculptured diaphragm, which also has a thinner portion. This diaphragm configuration increases the bending moment at the location of the sensing element through the load of the thin portion of the diaphragm, which is suspended along the periphery of the thick shelf.

Claims

1. A pressure sensor having only one point-like sensing element and comprising:

a single monocrystalline silicon diaphragm capable of flexing in response to pressure changes and having a first portion having a predetermined thickness, and a second portion having a predetermined thickness less than that of the first portion; and

said one point-like sensing element formed entirely in said first portion of said diaphragm, wherein an electrical resistance of said sensing element varies with the pressure changes on said second portion of said diaphragm.

2. The device of claim 1, wherein said diaphragm is of a first conductivity type, and said sensing element is of a second conductivity type opposite to that of the first conductivity type.

3. The device of claim 1, wherein said sensing element comprises:

first and second electrical terminals to said sensing element by which a current can be provided to said sensing element in a plane of said diaphragm; and

third and fourth electrical terminals to said sensing element located on opposite sides of and along a line approximately perpendicular to a line between said first and second terminals, said third and fourth terminals permitting detection and measurement of a voltage generated in response to the pressure changes on said diaphragm.

4. The device of claim 3, wherein said line between said first and second terminals is at an angle of about 45°

to a line defined by an adjacent edge of said diaphragm.

5. The device of claim 1, wherein said diaphragm is formed in a substrate and said diaphragm is defined by a cavity formed in a surface of said substrate opposing a surface of said substrate in which said sensing element is formed.

8. The device of claim 5, further comprising:

a single load resistor formed in said substrate and electrically connected to said sensing element; and

a single temperature compensating resistor connected in series to an input terminal of said sensing element.

6. A pressure sensor chip comprising:

a monocrystalline silicon diaphragm capable of flexing in response to pressure changes and having a first portion havign a predetermined thickness, and a second portion having a predetermined thickness less than that of the first portion; and

a piezo-resistive sensing element formed in said first portion of said diaphragm, whereby an electrical resistance of said sensing element varies with the pressure changes on said diaphragm;

wherein said first portion of said diaphragm is triangular in shape in a plane of said diaphragm, a corner of said first portion being located about at a center of said diaphragm, and wherein said sensing element is located at one side of said first portion, and adjacent to an edge of said diaphragm.

7. The device of claim 6, wherein said first portion of said diaphragm defines a recess along said one side of said first portion.

9. A pressure sensor chip comprising:

a silicon body of a first conductivity type capable of flexing in response to pressure changes and having a principal surface and an opposing back surface;

a first semiconductor region of a second conductivity type formed in said body and extending from said principal surface to a first depth into said body;

a second semiconductor region of the second conductivity type formed in said body adjacent to said first semiconductor region and extending from said principal surface to a second depth less that said first depth into said body;

a single recess defined by said body and extending from said back surface to said first and second semiconductor regions; and

a piezo-resistive sensing element formed entirely in said first semiconductor region, whereby an electrical resistance of said sensing element varies with the pressure changes on said body.

10. A method for making a sensor chip comprising the steps of:

providing a silicon substrate having a principal surface;

forming a first recess in a surface of said substrate opposite to said principal surface so as to define a diaphragm;

forming a second recess in said principal surface so as to define a single first portion of said diaphragm which is thinner than a second portion of said diaphragm; and

forming a piezo-resistive sensing element entirely in said second portion of said diaphragm.

11. A method for making a sensor chip comprising the steps of:

providing a substrate of a first conductivity type and having a principal surface;

forming a first region in said principal surface having a second conductivity type opposite to said first conductivity type and having a predetermined depth;

forming a second region in said principal surface having said second conductivity type and a depth greater than that of said first region;

etching a single recess in a surface of said substrate opposite to said principal surface, said recess being defined by the depths of said first and second region; and

forming a piezo-resistive sensing element entirely in said second region.

12. A pressure sensor chip comprising:

a monocrystalline silicon diaphragm capable of flexing in response to pressure changes and having a first portion having a predetermined thickness, and a second portion having a predetermined thickness less than that of the first portion; and

a piezo-resistive sensing element formed in said first portion of said diaphragm, whereby an electrical resistance of said sensing element varies with the pressure changes on said diaphragm;

wherein said first portion of said diaphragm is triangular in shape in a plane of said diaphragm, a corner of said first portion being located about a center of said diaphragm and wherein said sensing element is located at one said of said first portion, and adjacent to an edge of said diaphragm.

13. The device of claim 12, wherein said first portion of said diaphragm defines a recess along said one side of said first portion.