Method for manufacturing a polycrystalline layer on a substrate

CAFC
  • US 5,213,670 A
  • Filed: 08/09/1991
  • Issued: 05/25/1993
  • Est. Priority Date: 06/30/1989
  • Status: Expired due to Term
First Claim
Patent Images

1. A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of:

  • depositing an amorphous silicon layer on a substrate; and

    then controlling the phase transformation of the amorphous silicon into a polycrystalline layer by the steps of;

    heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystalline temperature for the amorphous silicon,holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature, and then, after reaching the thermal equilibrium,continuing the heating of said substrate with said amorphous silicon layer to raise the temperature at a controlled rate through a reproducible prescribed temperature profile from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×