Semiconductor power devices with alternating conductivity type high-voltage breakdown regions

CAFC
  • US 5,216,275 A
  • Filed: 09/17/1991
  • Issued: 06/01/1993
  • Est. Priority Date: 03/19/1991
  • Status: Expired due to Term
First Claim
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1. A semiconductor power device comprising:

  • a first contact layer of a first conductivity type;

    a second contact layer of a second conductivity type; and

    a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type, said first and second semiconductor regions being alternately arranged, the voltage sustaining layer further comprising a thin dielectric layer located between one of said first semiconductor regions and one of said second semiconductor regions for isolating said one of said first semiconductor regions and said one of said second semiconductor regions, the first contact layer contacting said first semiconductor region forming a first interface, the second contact layer contacting the first and second semiconductor regions directly forming a second interface.

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