Heat process device

• US 5,225,663 A
• Filed: 11/18/1991
• Issued: 07/06/1993
• Est. Priority Date: 06/15/1988
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tel Kyushu Limited
• Inventors: Shirakawa, Eiichi, Matsumura, Kimiharu
• Primary Examiner(s): Walberg, Teresa J.
• Application Number:
  US07/793,509
• Time in Patent Office: 596 Days
• Field of Search: 219/405, 219/411, 219/370, 219/468, 219/464, 219/465, 219/546, 219/543, 392/439, 338/308, 338/309
• US Class Current: 219/543
• CPC Class Codes: H01L 21/67103 mainly by conduction

Abstract

A heat process device according to the present invention includes a film-like heating body serving as a heat source for a heat transfer plate on which an object to be processed is mounted and heated. Therefore, the heat process device can be excellent in controlling the heating temperature. It can also apply a uniform heat process to the object. Further, it can be made small in size and easy to operate.

Claims

1. A heat process device comprising:

plural heat process units piled one upon the others at a certain interval, each of said heat process units including a heat transfer plate on one side of which an object to be processed is mounted;

a film-like heating body attached to the other side of the heat transfer plate;

electrodes attached to the film-like heating body; and

a system for supplying a predetermined amount of current to the electrodes.

2. The heat process device according to claim 1, wherein said object to be processed is a semiconductor wafer, a liquid crystal device or a printing resister.

3. A heat process device comprising:

a heat transfer plate on one side of which an object to be processed is mounted,

a film-like heating body formed on this one side of said heat transfer plate,

electrodes formed on and along both side edges of said film-like heating body,

a means for supplying a predetermined amount of current to said electrodes, and

an insulation layer formed not on said electrodes but on said film-like heating body.

5. The heat process device according to any of claims 3 and 4, wherein said insulation layer formed on the film-like heating is made of a material selected from the group consisting of:

alumina, zirconia, silicon carbonite, silicon nitride, quartz, rutile, high alumina brick and carbon brick.

4. A heat process device comprising plural heat process units piled one upon the other at a certain interval, said heat process unit including a heat transfer plate on one side of which an object to be processed is mounted, a film-like heating body formed on this side of said heat transfer plate, electrodes formed on and along both side rims of said film-like heating body, a means for supplying a predetermined amount of current to said electrodes, and an insulation layer formed not on said electrodes but on said film-like heating body.