Semiconductor memory circuit device and method for fabricating same

  • US 5,237,187 A
  • Filed: 11/27/1991
  • Issued: 08/17/1993
  • Est. Priority Date: 11/30/1990
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor memory circuit device comprising:

  • a semiconductor substrate having a main surface and an opposing, back surface, wherein at said main surface there are provided a first region including a memory cell array, and a separate, second region including peripheral circuitry;

    a first MISFET formed in said first region and comprising a gate electrode and source and drain regions;

    a second MISFET formed in said second region and comprising a gate electrode and source and drain regions;

    a first insulating film disposed on the gate electrode of each of said first and second MISFETs;

    a first capacitor electrode connected electrically to one of the source and drain regions of said first MISFET and extending onto said first insulating film and over the gate electrode of said first MISFET;

    a second capacitor electrode disposed on a dielectric film formed on said first capacitor electrode;

    a second insulating film disposed on said second capacitor electrode in said first region and over said first insulating film in said second region;

    a conductor layer including a first wiring disposed on said second insulating film and over the gate electrode of said first MISFET, in said first region, and a second wiring disposed on said second insulating film and over the gate electrode of said second MISFET, in said second region; and

    a third insulating film interposed between said first insulating film and said first capacitor electrode in said first region, and between said first and second insulating films in said second region.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×