X-ray exposure apparatus

• US 5,267,292 A
• Filed: 03/01/1993
• Issued: 11/30/1993
• Est. Priority Date: 10/05/1988
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Tanaka, Yutaka, Amemiya, Mitsuaki, Kariya, Takao, Shimoda, Isamu, Mizusawa, Nobutoshi
• Primary Examiner(s): Porta, David P.
• Assistant Examiner(s): WONG, DON KITSUN
• Application Number:
  US08/026,105
• Time in Patent Office: 274 Days
• Field of Search: 378/34, 378/35, 250/492.2
• US Class Current: 378/34
• CPC Class Codes: G03F 7/70816 Bearings
• CPC Class Codes: G03F 7/70858 Environment aspects, e.g. pressure of beam-path gas, temperature pollution aspects G03F7/70916
• CPC Class Codes: G03F 7/70866 of mask or workpiece
• CPC Class Codes: G03F 7/70875 Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Abstract

An X-ray exposure apparatus for exposing a semiconductor wafer to a mask with X-rays, to print a pattern of the mask onto the wafer, is disclosed. The ambience within a stage accommodating chamber, accommodating a mask, a semiconductor wafer, and the like, is replaced by helium. Thereafter, a predetermined quantity of helium is supplied into the stage accommodating chamber. This effectively prevents degradation of the purity of helium due to air leakage into the chamber. Therefore, any undesirable decrease in the quantity of X-ray transmission can be avoided. Thus, high-precision and high-throughput exposure is ensured.

Claims

1. An X-ray exposure apparatus for exposing a mask and a wafer with X-rays to transfer a pattern of the mask to the wafer, said apparatus comprising:

a window through which the X-rays pass to expose the mask and the wafer;

a chamber for providing a reduced pressure helium ambience in a space between said window and the wafer;

supplying means for continuously supplying a predetermined quantity of helium into said chamber at least during a period when the mask and the wafer are exposed with the X-rays;

vacuum means for supplying a vacuum to said chamber; and

control means for controlling the vacuum supplied from said vacuum means to said chamber to maintain a reduced pressure helium ambience in said chamber,

wherein, when the quantity of helium supplied into said chamber is G_He (Torrl/s) and the quantity of air leakage into said chamber is G_Air (Torrl/s), the quantity G_He is so determined that G_He /(G_He +G_Air) is not lower than a predetermined purity.

2. An apparatus according to claim 1 wherein said chamber provides a reduced pressure helium ambience in a space between said window and the mask.

3. An apparatus according to claim 1 wherein said chamber provides a reduced pressure helium ambience in a space between the mask and the wafer.

4. An apparatus according to claim 3, wherein said chamber provides a reduced pressure helium ambience in a space between said window and the mask.

5. An apparatus according to claim 1, wherein said control means comprises a detector for detecting pressure in said chamber and a variable valve which is controlled in accordance with an output of said detector.

6. An apparatus according to claim 5, wherein said supplying means comprises a constant-temperature vessel and a mass flow meter.

7. An X-ray exposure apparatus for exposing a mask and a wafer with X-rays to transfer a pattern of the mask to the wafer, said apparatus comprising:

a window through which the X-rays pass to expose the mask and the wafer;

a chamber for providing a reduced pressure helium ambience in a space between said window and the wafer;

supplying means for continuously supplying a predetermined quantity of helium into said chamber at least during a period when the mask and the water are exposed with the X-rays;

vacuum means for supplying a vacuum to said chamber; and

control means for controlling the vacuum applied from said vacuum means to said chamber to maintain a reduced pressure helium ambience in said chamber,

wherein, when the quantity of helium supplied into said chamber is G_He (Torrl/s), the quantity of air leakage into said chamber is G_Air (Torrl/s), the pressure in said chamber at the time of the exposure is P (Torr) and the distance from said window to the wafer is d (cm), the quantity G_He satisfies the following relation;

space="preserve" listing-type="equation">G.sub.He /(G.sub.He +G.sub.Air)≧

(1-8.74/Pd).

8. An apparatus according to claim 7, wherein, after said chamber is vacuum-evacuated to a pressure not higher than 8.74/d (Torr), said supplying means supplies the helium so that the pressure in said chamber becomes equal to the pressure P.

9. An X-ray exposure apparatus for exposing a mask and a wafer with X-rays to transfer a pattern of the mask to the wafer, said apparatus comprising:

a window through which the X-rays pass to expose the mask and the wafer;

a chamber for providing a reduced pressure helium ambience in a space between said window and the wafer;

supplying means for continuously supplying a predetermined quantity of helium into said chamber at least during a period when the mask and the wafer are exposed with the X-rays;

vacuum means for supplying a vacuum to said chamber;

control means for controlling the vacuum supplied from said vacuum means to said chamber to maintain a reduced pressure helium ambience in said chamber; and

a stage mechanism accommodated in said chamber for moving the wafer, said stage mechanism having a static pressure bearing.

10. A semiconductor device manufacturing method wherein a mask and a wafer are exposed with X-rays so that a pattern of the mask is transferred to the wafer, said method comprising the steps of:

defining a window through which the X-rays pass to expose the mask and the wafer;

defining a chamber for providing a reduced pressure helium ambience in a space between the window and the wafer;

continuously supplying a predetermined quantity of helium into the chamber at least during a period when the mask and the wafer are exposed with the X-rays;

controllably supplying a vacuum to the chamber to maintain a reduced pressure helium ambience in the chamber; and

exposing the mask and the wafer with the x-rays passed through the window, while maintaining the reduced helium ambience in the chamber,

wherein, when the quantity of helium supplied into the chamber is G_He (Torrl/s) and the quantity of air leakage into the chamber is G_Air (Torrl/s), the quantity G_He is so determined that G_He /(G_He +G_Air) is now lower than a predetermined purity.

11. A method according to claim 10, wherein, after the chamber is vacuum-evacuated, helium is supplied into the chamber so that the pressure in the chamber becomes equal to the pressure at the time of the exposure.

12. A semiconductor device manufacturing method wherein a mask and a wafer are exposed with X-rays so that a pattern of the mask is transferred to the wafer, said method comprising the steps of:

defining a window through which the X-rays pass to expose the mask and the wafer;

defining a chamber for providing a reduced pressure helium ambience in a space between the window and the wafer;

continuously supplying a predetermined quantity of helium into the chamber at least during a period when the mask and the wafer are exposed with the X-rays;

controllably supplying a vacuum to the chamber to maintain a reduced pressure helium ambience in the chamber; and

exposing the mask and the wafer with the X-rays passed through the window, while maintaining the reduced pressure helium ambience in the chamber,

wherein, when the quantity of helium supplied into the chamber is G_He (Torrl/s), the quantity of air leakage into the chamber is G_Air (Torrl/s), the pressure in the chamber at the time of the exposure is P (Torr) and the distance from the window to the wafer is d (cm), the quantity G_He satisfies the following relation;

space="preserve" listing-type="equation">G.sub.He /(G.sub.He +G.sub.Air)≧

(1-8.74/Pd).

13. The method according to claim 12, wherein, after the chamber is vacuum-evacuated to a pressure not higher than 8.74/d (Torr), the helium is supplied so that the pressure in said chamber becomes equal to the pressure P.

14. An X-ray exposure apparatus for exposing a wafer with X-rays to print a pattern thereon, said apparatus comprising:

a window through which the X-rays pass to expose the wafer;

a chamber for providing a reduced pressure gaseous ambience, containing a gas of low X-ray absorbency, in a space between said window and the wafer;

supplying means for supplying the gas into said chamber at least during a period when the wafer is exposed wit the X-rays;

vacuum means for supplying a vacuum to said chamber; and

control means for controlling the vacuum supplied from said vacuum means to said chamber to maintain a reduced pressure gaseous ambience in said chamber,

wherein, when the quantity of the gas supplied into said chamber is G_Gas (Torrl/s) and the quantity of air leakage into said chamber is G_Air (Torrl/s), the quantity G_Gas is so determined that G_Gas /(G_Gas +G_Air) is not lower than a predetermined value.

15. An exposure apparatus for exposing a wafer with exposure energy to print a pattern thereon, said apparatus comprising:

a window through which the exposure energy passes to expose the wafer;

a chamber for providing a reduced pressure gaseous ambience, which contains a gas of low absorbency with respect to the exposure energy, in a space between said window and the wafer;

supplying means for supplying the gas into said chamber at least during a period when the wafer is exposed with the exposure energy;

vacuum means for supplying a vacuum to said chamber; and

control means for controlling the vacuum supplied from said vacuum means to said chamber to maintain a reduced pressure gaseous ambience in said chamber,

wherein, when the quantity of the gas supplied into said chamber is G_Gas (Torrl/s) and the quantity of air leakage into said chamber is G_Air (Torrl/s), the quantity G_Gas is so determined that G_Gas /(G_Gas +G_Air) is not lower than a predetermined value.