Photolithographic reduction imaging of extended field

  • US 5,281,996 A
  • Filed: 09/04/1992
  • Issued: 01/25/1994
  • Est. Priority Date: 09/04/1992
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of imaging a large microcircuit device in a resolution range of 0.1-0.50 micrometers, said method comprising:

  • a. using an axially centered photolithographic reduction lens having a circular image field with a diameter that is less than a diagonal of said microcircuit device;

    b. arranging a stage for a mask for said microcircuit device to be movable relative to said lens;

    c. arranging a stage for a wafer on which said microcircuit device is imaged to be movable relative to said lens;

    d. controlling the accuracy of movement of said stages relative to said lens; and

    e. using said movement of said stages to correlate different regions of said mask moved into a field of view of said lens with correspondingly different regions of said wafer moved into said image field of said lens in a pattern that successively images the entire area of said microcircuit device.

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