Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride

• US 5,286,344 A
• Filed: 06/15/1992
• Issued: 02/15/1994
• Est. Priority Date: 06/15/1992
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Roe, Fred, Blalock, Guy, Becker, David S.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US07/898,505
• Time in Patent Office: 610 Days
• Field of Search: 156/643, 156/646, 156/662, 156/659.1, 156/652, 156/653, 156/657, 156/655, 156/654
• US Class Current: 438/723
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics

Abstract

More specifically, a process is provided for etching a multilayer structure to form a predetermined etched pattern therein. The subject process comprises providing the multilayer structure having a plurality of structural layers. The structural layers of the multilayer structure comprise a silicon dioxide outer layer on an underlying silicon nitride stop layer. Then, a chemical etchant protective layer is formed on a major surface of the multilayer structure having a predetermined pattern of openings, thereby exposing areas of the silicon dioxide outer layer corresponding to the predetermined pattern of openings. The exposed areas of the silicon dioxide outer layer are then etched down to the silicon nitride stop layer, at a high SiO₂ etch rate and at a high level of selectivity of the SiO₂ etch rate with respect to the Si₃ N₄ etch rate, with a fluorinated chemical etchant system. The fluorinated chemical etchant system includes an etchant material and an additive material. The additive material comprises a fluorocarbon material in which the number of hydrogen atoms is equal to or greater than the number of fluorine atoms. The etching step forms a substantially predetermined etch pattern in the silicon dioxide outer layer in which the contact sidewalls of said SiO₂ outer layer are substantially upright.

Claims

1. A process for plasma etching a multilayer structure to form a predetermined etched pattern therein, comprising:

providing a multilayer structure, the outer layers of the multilayer structure comprising a silicon dioxide outer layer on an underlying silicon nitride stop layer;

forming on the top surface of the multilayer structure a chemical etchant resistant layer having a pattern of openings in therein and thereby exposing areas of the silicon dioxide outer layer corresponding to the pattern of openings; and

etching the exposed areas of the silicon dioxide outer layer to the silicon nitride stop layer, at a high SiO₂ etch rate, and at a high level of selectivity of said SiO₂ etch rate with respect to said Si₃ N₄ etch rate, with a fluorinated chemical etchant system including an etchant material ad an additive material, said additive material comprising a fluorocarbon material in which the number of hydrogen atoms is equal to or grater than the number of fluorine atoms, and sad etching step forming an etch pattern in the silicon dioxide outer layer in which the contact sidewalls of said SiO₂ outer layer are perpendicular to the multilayer structure layers.

2. The process of claim 1, wherein said additive material comprises CH₂ F₂.

3. The process of claim 1, wherein said etchant material comprises at least one of CHF₃, CF₄ and Ar.

4. The process of claim 1, wherein said higher level of selectivity of said SiO₂ etch rate with respect to said Si₃ N₄ etch rate is at least about 10:

1.

5. The process of claim 1, wherein said high SiO₂ etch rate is at least about 2,500 angstroms of SiO₂ per minute.

6. The process of claim 1, wherein said additive material comprises CH₃ F.

7. The process of claim 1, wherein said etching of the exposed areas of the silicon dioxide outer layer to the silicon nitride stop layer comprises a dry etching process conducted in a magnetically-enhanced etching chamber.

8. The process of claim 1, wherein said fluorinated chemical etchant system comprises from about 70-90% of said etchant material, and from about 10-30% of said additive material, based on the total flow of the fluorinated chemical etchant system.

9. The process of claim 1, wherein the selectivity of said SiO₂ etch rate with respect to said Si₃ N₄ etch rate for etching the silicon dioxide outer layer to the silicon nitride stop layer, employing a fluorinated chemical etchant system including an etchant material and an additive material, is at least about 500% higher than the selectivity of said SiO₂ etch rate with respect to said Si₃ N₄ etch rate for etching the silicon dioxide outer layer to the silicon nitride stop layer, employing a fluorinated chemical etchant system including said etchant material without said additive material.

10. The process of claim 1, wherein said multilayer structure includes a silicon wafer, and the temperature of said silicon wafer during said etching step is from about 20-80 degrees C.

11. A process for using an etchant material for plasma etching a multilayer structure to form a etched pattern therein, comprising:

providing a fluorinated chemical etchant system including an etchant material and an additive material, said additive material comprising at least one of CH₂ F₂ or CH₃ F;

providing a multilayer structure having a plurality of structural layers, one of the outer structural layers of the multilayer structure comprising a silicon dioxide outer layer on an underlying silicon nitride stop layer;

forming on the top surface of the multilayer structure a chemical etchant resistant layer having a pattern of openings therein and thereby exposing areas of the silicon dioxide outer layer corresponding to the pattern of openings; and

etching the exposed areas of the silicon dioxide outer layer to the silicon nitride stop layer, at a high SiO₂ etch rate, and at a high level of selectivity of said SiO₂ etch rate with respect to said Si₃ N₄ etch rate, with a fluorinated chemical etchant system including an etchant material and an additive material, said additive material comprising a fluorocarbon material in which the number of hydrogen atoms is equal to or greater than the number of fluorine atoms, ad said etching step forming an etch pattern in the silicon dioxide outer layer in which the contact sidewalls of sad SiO₂ outer layer are perpendicular to the multilayer structure layers.

12. The process of claim 11, wherein said etchant material comprising at least one of CHF₃, CF₄ and Ar.

13. The process of claim 11, wherein said high level of selectivity of said SiO₂ etch rate with respect to said Si₃ N₄ etch rate is at least about 10:

1.

14. The process of claim 11, wherein said high SiO₂ etch rate is at least about 2,500 angstroms of SiO₂ per minute.

15. The process of claim 11, wherein said additive material comprises CH₃ F.

16. The process of claim 11, wherein said etching of the exposed areas of the silicon dioxide outer layer to the silicon nitride stop layer comprises a dry etching process conducted in a magnetically-enhanced etching chamber.

17. The process of claim 11, wherein said fluorinated chemical etchant system comprises from bout 70-90% of said etchant material, and from about 10-30% of said additive material, based on the total flow of the fluorinated chemical etchant system.

18. The process of claim 11, wherein the selectivity of said SiO₂ etch rate with respect to said Si₃ N₄ etch rate for etching the silicon dioxide outer layer to the silicon nitride stop layer, employing a fluorinated chemical etchant system including an etchant material and an additive material, is at least about 500% higher than the selectivity of said SiO₂ etch rate with respect to said Si₃ N₄ etch rate for etching the silicon dioxide outer layer to the silicon nitride stop layer, employing a fluorinated chemical etchant system including said etchant material without sad additive material.

19. The process of claim 11, wherein said multilayer structure includes a silicon wafer, and the temperature of said silicon wafer during said etching step is from about 20-80 degrees C.

20. A fluorinated chemical etchant system for plasma etching a multilayer structure having a plurality of structural layers comprising a silicon dioxide outer layer on an underlaying silicon nitride layer, the multilayer structure having a chemical etchant resistant patterned layer including a pattern of openings therein, thereby exposing a plurality of areas of the top surface of the multilayer structure corresponding to the pattern of openings during etching, which comprises:

a fluorinated chemical etchant system including an etchant material and an additive material, said additive material comprising a fluorocarbon material in which the number of hydrogen atoms is equal to or greater than the number of fluorine atoms, for etching the plurality of exposed areas of the silicon dioxide outer layer to the silicon nitride stop layer, at a high SiO₂ etch rate, and at a high level of selectivity of said SiO₂ etch rate, respect to said Si₃ N₄ etch rate, to form an etched pattern in the silicon dioxide layer in which the contact sidewalls of said SiO₂ outer layer are perpendicular to the multiplayer structure layers.

21. The system of claim 20, wherein said additive material comprises CH₂ F₂.

22. The system of claim 20, wherein said etchant material comprising at least one of CHF₃, CF₄ and Ar.

23. The system of claim 20, wherein said high level of selectivity of said SiO₂ etch rate with respect to said Si₃ N₄ etch rate is at least about 10:

1.

24. The system of claim 20, wherein said high SiO₂ etch rate is at least about 2,500 angstroms of SiO₂ per minute.

25. The process of claim 20, wherein said fluorinated chemical etchant system comprises from about 70-90% of said etchant material, and from about 10-30% of said additive material, based on the total flow of the fluorinated chemical etchant system.

26. The system of claim 20, wherein the selectivity of said SiO₂ etch rate with respect to said Si₃ N₄ etch rate for etching the silicon dioxide outer layer to the silicon nitride stop layer, employing a fluorinated chemical etchant system including an etchant material and an additive material, is at least about 500% higher than the selectivity of said SiO₂ etch rate with respect to said Si₃ N₄ etch rate for etching the SiO₂ outer layer to the Si₃ N₄ stop layer, employing a fluorinated chemical etchant system including said etchant material without said additive material.

28. An etching process as in claim 22, further comprising:

etching with the plasma when the bottom electrode is within a temperature range from 20 to 80 degrees C.

27. A dry etching process for a multilayer semiconductor wafer, comprising:

a) providing a silicon-dioxide layer;

b) providing a silicon-nitride layer, located under the silicon-dioxide layer; and

c) using a plasma,

having an etchant, and a fluorocarbon additive gas in which the number of hydrogen atoms are greater than the number of fluorine atoms,

to etch through the silicon-dioxide layer down to the top surface of the silicon-nitride layer.

29. An etching process as in claim 27, wherein the silicon-dioxide layer etch rate is at least about 2,500 angstroms per minute.

30. An etching process as in claim 27, wherein

the plasma etching is dry etching process conducted in a magnetically-enhanced etching chamber.

31. An etching process as in claim 27, wherein

the plasma etching has a selectivity of SiO₂ etch rate with respect to Si₃ N₄ etch rate is at least a 15 to 1 ratio.