Prenucleation process for simox device fabrication
First Claim
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1. A method of producing a buried insulating layer in a silicon substrate comprising the steps ofA. implanting a subcritical dose of at least one first ion species into said substrate to induce a controlled amount of damage to regions of the silicon lattice within a subsurface layer;
- B. creating nucleation sites in the damaged silicon lattice within said subsurface layer by heating the substrate following ion implantation to enlarge the damaged regions;
C. implanting oxygen ions into said subsurface layer following the creation of the nucleation sites to deliver a total oxygen dose to the substrate less than 1.5×
1018 ions/cm2 ; and
D. annealing said substrate to form a buried layer of silicon dioxide in said silicon substrate.
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Abstract
A method of manufacturing SIMOX heterostructures is disclosed wherein a subcritical dose of oxygen ions is implanted following a first, short "nucleating" implant and a nucleation growth step. The SIMOX structure thus formed has a thin, buried oxide layer and sharp interfaces.
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14 Claims
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1. A method of producing a buried insulating layer in a silicon substrate comprising the steps of
A. implanting a subcritical dose of at least one first ion species into said substrate to induce a controlled amount of damage to regions of the silicon lattice within a subsurface layer; -
B. creating nucleation sites in the damaged silicon lattice within said subsurface layer by heating the substrate following ion implantation to enlarge the damaged regions; C. implanting oxygen ions into said subsurface layer following the creation of the nucleation sites to deliver a total oxygen dose to the substrate less than 1.5×
1018 ions/cm2 ; andD. annealing said substrate to form a buried layer of silicon dioxide in said silicon substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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