Measuring circuit with a biosensor utilizing ion sensitive field effect transistors

• US 5,309,085 A
• Filed: 11/24/1992
• Issued: 05/03/1994
• Est. Priority Date: 08/21/1990
• Status: Expired due to Term

• Current Assignee: Byung K.I. Sohn
• Original Assignee: Byung K.I. Sohn
• Inventors: Sohn, Byung Ki
• Primary Examiner(s): Wieder, Kenneth A.
• Assistant Examiner(s): BROWN, GLENN WARNER
• Application Number:
  US07/982,002
• Time in Patent Office: 525 Days
• Field of Search: 324/71.1, 324/71.5, 324/705, 324/713, 324/158 T, 204/403, 204/418, 204/153.12, 435/288, 435/817
• US Class Current: 257/253
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82

Abstract

A measuring circuit with a biosensor utilizing ion sensitive field effect transistors having a simplified structure and is advantageous to integration. The measuring circuit comprises two ion sensitive FET input devices composed of an enzyme FET having an enzyme sensitive membrane on the gate and a reference FET, and a differential amplifier for amplifying the outputs of the enzyme FET and the reference FET. The drift phenomena of the ISFETs due to the use of a non-stable quasi-reference electrode as well as the temperature dependence thereof can be eliminated by the differential amplifier consisting of MOSFETs having the same channel as the ISFETs. The ISFET biosensor and the measuring circuit can be integrated into one chip.

Claims

1. A measuring circuit with a biosensor utilizing ion sensitive field effect transistors, comprising:

two input devices composed of ion sensitive field effect transistors, wherein one of said ion sensitive field effect transistors is an enzyme field effect transistor having an enzyme sensing membrane on a gate surface and another one of said ion sensitive field effect transistors is a reference field effect transistor having no enzyme sensing membrane; and

differential amplifier means coupled to receive output signals of said ion sensitive field effect transistors, for providing gain differentiated signals, said differential amplifier means having at least two metal-oxide-semiconductor field effect transistors, each of said metal-oxide-semiconductor field effect transistors having the same-type channel as said enzyme field effect transistor and said reference field effect transistor.

2. A measuring circuit, comprising:

two input devices composed of ion sensitive field effect transistors, wherein one of said ion sensitive field effect transistors is an enzyme field effect transistor having an enzyme sensing membrane on a gate surface and another one of said ion sensitive field effect transistors is a reference field effect transistor having no enzyme sensing membrane;

differential amplifier means coupled to receive output signals of said ion sensitive field effect transistors, for providing gain differentiated signals, said differential amplifier means having at least two metal-oxide-semiconductor field effect transistors, each of said metal-oxide-semiconductor field effect transistors having the same-type channel as said enzyme field effect transistor and said reference field effect transistor; and

single-ended converter means for converting said gain differentiated signals into a measured signal representative of physical and chemical properties of a liquid of interest, said single-ended converter means comprising at least four metal-oxide-semiconductor field effect transistors having the same-type channel said enzyme field effect transistor and said reference field effect transistor.

3. The measuring circuit as claimed in claim 2, wherein the differential gain of said differential amplifier means is adjusted by varying an aspect ratio of each of said enzyme field effect transistor, said reference field effect transistor and said metal-oxide-semiconductor field effect transistors.

4. The measuring circuit as claimed in claim 2, wherein said enzyme field effect transistor comprises:

a P-type semiconductor substrate having first and second diffusion regions of a N-type material separated and spaced-apart by a gate region, said first and second diffusion regions respectively representative of a source region and a drain region;

a first insulating layer on the surface of said P-type semiconductor substrate;

an ion sensitive membrane on the surface of said first insulating layer;

first and second metal layers in a V-shape, each having a base in contact at a center of one of said source region and said drain region and two ends extending in parallel with a surface of said ion sensitive membrane;

an enzyme sensitive membrane directly on the surface of said ion sensitive membrane over said gate region, for detecting physical and chemical properties of a liquid of interest; and

a second insulating layer on the surface of said first and second metal layers, for isolating said metal layers from said liquid of interest.

5. A circuit for measuring a bio-substance concentration of a biomaterial, comprising:

a first transistor having a source region connected to a first terminal for first voltage source and an enzyme sensing membrane on a gate region, for generating a sensed signal by sensing physical and chemical properties of a biomaterial of interest;

a second transistor having a source region connected to said first terminal and a gate region, for serving as a reference electrode to provide a reference signal, said second transistor having a geometry and physical structure substantially identical to said first transistor;

a third transistor having a gate region and a drain region connected to a second terminal for a second voltage source, and a source region connected to a drain region of said first transistor, for amplifying said sensed signal to provide a first gain signal;

a fourth transistor having a gate region and a drain region connected to said second terminal, and a source region connected to a drain region of said second transistor, for amplifying said reference signal to provide a second gain signal;

a fifth transistor having a drain region connected to a third terminal for a third voltage source, and a gate region coupled to receive said first gain signal;

a sixth transistor having a drain region and a gate region connected to a source region of said fifth transistor, and a source region connected to a fourth terminal for a fourth voltage source;

a seventh transistor having a gate region connected to said source region of said fifth transistor, and a source region connected to said fourth terminal; and

an eighth transistor having a drain region connected to said third terminal, a gate region coupled to receive said second gain signal, and a source region connected to a drain region of said seventh transistor at an output terminal, for providing a differentiated gain signal.

6. The circuit as claimed in claim 5, wherein said first transistor is an enzyme field-effect transistor.

7. The circuit as claimed in claim 6, wherein said second transistor is a reference field-effect transistor.

8. The circuit as claimed in claim 5, wherein each of said third, fourth, fifth, sixth, seventh and eight transistors are N-channel MOSFETs having a gate proportion substantially equivalent to said first and second transistors.

9. The circuit as claimed in claim 5, wherein said first transistor comprises:

a P-type semiconductor substrate having first and second diffusion regions of a N-type material separated and spaced-apart by a gate region, said first and second diffusion regions respectively representative of a source region and a drain region;

a first insulating layer on the surface of said P-type semiconductor substrate;

an ion sensitive membrane on the surface of said first insulating layer;

first and second metal layers in a V-shape, each having a base in contact at a center of one of said source region and said drain region of said first transistor and a channel having two ends extending in parallel with a surface of said ion sensitive membrane;

an enzyme sensitive membrane directly on the surface of said ion sensitive membrane over said gate region of said first transistor, for detecting said physical and chemical properties of a biomaterial of interest; and

a second insulating layer on the surface of said first and second metal layers, for isolating said metal layers from said biomaterial of interest.

10. A circuit for measuring a bio-substance concentration of a biomaterial, comprising:

an enzyme field-effect transistor having an enzyme sensing membrane on a gate region, for sensing physical and chemical properties of a biomaterial of interest;

a reference field-effect transistor having a geometry and physical structure substantially identical to said enzyme field-effect transistor;

differential amplifier means comprised of at least two metal-oxide semiconductor field-effect transistors having a channel region of a conductivity type substantially identical to a respective channel region of said enzyme field-effect transistor and said reference field-effect transistor, for gain differentiating output signals of said enzyme field-effect transistor and said reference field-effect transistor; and

single-ended converter means comprised of at least four metal-oxide semiconductor field-effect transistors, for providing a sensed signal representative of a bio-substance concentration of said biomaterial of interest in dependence upon reception of output signals of said differential amplifier means.

11. The circuit as claimed in claim 10, wherein said enzyme field-effect transistor comprise:

a P-type semiconductor substrate having first and second diffusion regions of a N-type material separated and spaced-apart by a gate region, said first and second diffusion regions respectively defining a source region and a drain region;

a first insulating layer positioned upon one surface of said P-type semiconductor substrate;

an ion sensitive membrane positioned upon one surface of said first insulating layer;

first and second metal layers formed in a V-shape, each of said first and said second layers having a base in contact with a center of one of said source region and said drain region and a channel having two ends extending parallel to a surface of said ion sensitive membrane;

enzyme sensitive membrane positioned directly upon one surface of said ion sensitive membrane over said gate region, for detecting said physical and chemical properties of said biomaterial of interest; and

a second insulating layer positioned upon the surface of said first and second metal layers, for isolating said first and said second metal layers from said biomaterial of interest.

12. A measuring circuit with a biosensor utilizing ion sensitive field effect transistor, comprising:

input means comprising ion sensitive field effect transistors, wherein one of said ion sensitive field effect transistors is an enzyme field effect transistor having an enzyme sensing membrane on a gate surface and another one of said ion sensitive field effect transistors is a reference field effect transistor having no enzyme sensing membrane; and

differential amplifier means coupled to receive output signals of said ion sensitive field effect transistors, for providing gain differentiated signals, said differential amplifier means having at least two metal-oxide-semiconductor field effect transistors, each of said metal-oxide-semiconductor field effect transistors having a channel of a conductivity type substantially identical to a respective channel of said enzyme field effect transistor and said reference field effect transistor.

13. A measuring circuit, comprising:

input means comprising ion sensitive field effect transistors, wherein one of said ion sensitive field effect transistors is an enzyme field effect transistor having an enzyme sensing membrane on a gate surface and another one of said ion sensitive field effect transistors is a reference field effect transistor having no enzyme sensing membrane;

differential amplifier means coupled to receive output signals of said ion sensitive field effect transistors, for providing gain differentiated signals, said differential amplifier means having at least two metal-oxide-semiconductor field effect transistors, each of said metal-oxide-semiconductor field effect transistors having a channel of a conductivity type substantially identical to a respective channel of said enzyme field effect transistor and said reference field effect transistor; and

single-ended converter means for converting said gain differentiated signals into a measured signal representative of physical and chemical properties of a liquid of interest, said single-ended converter means comprising at least four metal-oxide-semiconductor field effect transistors having the channel of the conductivity type substantially identical to the respective channel of said enzyme field effect transistor and said reference field effect transistor.

14. The measuring circuit as claimed in claim 13, wherein the differential gain of said differential amplifier means is adjusted by varying an aspect ratio of each of said enzyme field effect transistor, said reference field effect transistor and said metal-oxide-semiconductor field effect transistors.

15. The measuring circuit as claimed in claim 13, wherein said enzyme field effect transistor comprises:

a P-type semiconductor substrate having first and second diffusion regions of a N-type material separated and spaced-apart by a gate region, said first and second diffusion regions respectively representative of a source region and a drain region;

a first insulating layer on the surface of said P-type semiconductor substrate;

an ion sensitive membrane on the surface of said first insulating layer;

first and second metal layers in a V-shape, each having a base in contact at a center of one of said source region and said drain region and two ends extending in parallel with a surface of said ion sensitive membrane;

an enzyme sensitive membrane directly on the surface of said ion sensitive membrane over said gate region, for detecting physical and chemical properties of a liquid of interest; and

a second insulating layer on the surface of said first and second metal layers, for isolating said metal layers from said liquid of interest.

16. A circuit for measuring a bio-substance concentration of a biomaterial, comprising:

means for providing a reference potential across a biomaterial of interest;

a first transistor having a source region connected to a first terminal for first terminal and an enzyme sensing membrane on a gate region, for generating a sensed signal by sensing physical and chemical properties of said biomaterial of interest and said reference potential;

a second transistor having a source region connected to said first voltage source and a gate region, for serving as a reference electrode to provide a reference signal in dependence upon said reference potential, said second transistor having a geometry and physical structure substantially identical to said first transistor;

a third transistor having a gate region and a drain region connected to a second terminal for a second voltage source, and a source region connected to a drain region of said first transistor, for amplifying said sensed signal to provide a first gain signal influenced by said physical and chemical properties and by said reference potential;

a fourth transistor having a gate region and a drain region connected to said second terminal, and a source region connected to a drain region of said second transistor, for amplifying said reference signal to provide a second gain signal influenced by said reference potential;

a fifth transistor having a drain region connected to a third terminal for a third voltage source, and a gate region coupled to receive said first gain signal;

a sixth transistor having a drain region and a gate region connected to a source region of said fifth transistor, and a source region connected to a fourth terminal for a fourth voltage source;

a seventh transistor having a gate region connected to said source region of said fifth transistor, and a source region connected to said fourth terminal; and

an eighth transistor having a drain region connected to said third terminal, a gate region coupled to receive said second gain signal, and a source region connected to a drain region of said seventh transistor at an output terminal, for providing a differentiated gain signal.

17. The circuit for measuring a bio-substance concentration of a biomaterial as claimed in claim 16, wherein said first transistor is an enzyme field-effect transistor.

18. The circuit for measuring a bio-substance concentration of a biomaterial as claimed in claim 16, wherein said second transistor is a reference field-effect transistor.

19. The circuit of claim 16, further comprised of said third transistor and said fourth transistor having the same-type channel as said first transistor.

20. The circuit for measuring a bio-substance concentration of a biomaterial as claimed in claim 16, wherein said first transistor comprises:

a P-type semiconductor substrate having first and second diffusion regions of a N-type material separated and spaced-apart by a gate region, said first and second diffusion regions respectively representative of a source region and a drain region;

a first insulating layer on the surface of said P-type semiconductor substrate;

an ion sensitive membrane on the surface of said first insulating layer;

first and second metal layers in a V-shape, each having a base in contact at a center of one of said source region and said drain region of said first transistor and a channel having two ends extending in parallel with a surface of said ion sensitive membrane;

an enzyme sensitive membrane directly on the surface of said ion sensitive membrane over said gate region of said first transistor, for detecting said physical and chemical properties of a biomaterial of interest; and

a second insulating layer on the surface of said first and second metal layers, for isolating said metal layers from said biomaterial of interest.

21. A circuit for measuring a bio-substance concentration of a biomaterial, comprising:

an enzyme field-effect transistor having an enzyme sensing membrane on a gate region, for sensing physical and chemical properties of a biomaterial of interest;

a reference field-effect transistor having a geometry and physical structure substantially identical to said enzyme field-effect transistor;

differential amplifier means comprised of at least two metal-oxide semiconductor field-effect transistors having a channel region of a conductivity type substantially identical to a respective channel region of said enzyme field-effect transistor and said reference field-effect transistor, for gain differentiating output signals of said enzyme field-effect transistor and said reference field-effect transistor; and

single-ended converter means comprised of at least four metal-oxide semiconductor field-effect transistors, for providing a sensed signal representative of a bio-substance concentration of said biomaterial of interest in dependence upon reception of output signals of said differential amplifier means.

22. The circuit for measuring a bio-substance concentration of a biomaterial as claimed in claim 21, wherein said enzyme field-effect transistor comprises:

a P-type semiconductor substrate having first and second diffusion regions of a N-type material separated and spaced-apart by a gate region, said first and second diffusion regions respectively defining a source region and a drain region;

a first insulating layer positioned upon one surface of said P-type semiconductor substrate;

an ion sensitive membrane positioned upon one surface of said first insulating layer;

first and second metal layers formed in a V-shape, each of said first and said second layers having a base in contact with a center of one of said source region and said drain region and a channel having two ends extending parallel to a surface of said ion sensitive membrane;

enzyme sensitive membrane positioned directly upon one surface of said ion sensitive membrane over said gate region, for detecting said physical and chemical properties of said biomaterial of interest; and

a second insulating layer positioned upon the surface of said first and second metal layers, for isolating said first and said second metal layers from said biomaterial of interest.

23. A method for measuring a bio-substance concentration of a biomaterial by the use of an enzyme FET having an enzyme sensing membrane on a gate region, and a reference FET having a geometry and physical structure substantially identical to said enzyme FET connected to a voltage source, said method comprising the steps of:

generating a sensed signal upon sensing physical and chemical properties of a biomaterial of interest by immersing said enzyme FET and said reference FET into said biomaterial of interest;

generating differential signals by gain differentiating said sensed signal to eliminate temperature dependency characteristics of said enzyme FET and said reference FET by a differential amplifier having at least two MOS-FETs having a channel region of a conductivity type substantially identical to a respective channel region of said enzyme FET and said reference FET to provide differential signals; and

generating a measured signal representative of said bio-substance concentration of said biomaterial of interest in dependence upon said differential signals.

24. A method for measuring a bio-substance concentration of a biomaterial by the use of an enzyme FET having an enzyme sensing membrane on a gate region, and a reference FET having a geometry and physical structure substantially identical to said enzyme FET connected to a voltage source, said method comprising the steps of:

generating a sensed signal upon sensing physical and chemical properties of a biomaterial of interest by immersing said enzyme FET and said reference FET into said biomaterial of interest;

generating differential signals by gain differentiating said sensed signal to eliminate temperature dependency characteristics of said enzyme FET and said reference FET by a differential amplifier having at least two MOS-FETs having a channel region of a conductivity type substantially identical to a respective channel region of said enzyme FET and said reference FET to provide differential signals; and

generating a measured signal representative of said bio-substance concentration of said biomaterial of interest by a single-ended converter in dependence upon said differential signals, said single-ended converter comprising at least four MOS-FETs having the channel of the conductivity type substantially identical to the respective channel of said enzyme FET and said reference FET.

25. The method as claimed in claim 24, wherein said enzyme field effect transistor comprises:

a P-type semiconductor substrate having first and second diffusion regions of a N-type material separated and spaced-apart by a gate region, said first and second diffusion regions respectively representative of a source region and a drain region;

a first insulating layer on the surface of said P-type semiconductor substrate;

an ion sensitive membrane on the surface of said first insulating layer;

first and second metal layers in a V-shape, each having a base in contact at a center of one of said source region and said drain region and two ends extending in parallel with a surface of said ion sensitive membrane;

an enzyme sensitive membrane directly on the surface of said ion sensitive membrane over said gate region, for detecting physical and chemical properties of said biomaterial of interest; and

a second insulating layer on the surface of said first and second metal layers, for isolating said metal layers from said biomaterial of interest.

26. A circuit for measuring a bio-substance concentration of a biomaterial, comprising:

a first transistor having a first electrode of a principal electrically conducting channel connected to a terminal for a first voltage source, a second electrode of said principal electrically conducting channel coupled to a first node and a common electrode formed with an enzyme sensing membrane for sensing physical and chemical properties of a biomaterial of interest;

a second transistor having a first electrode of a principal electrically conducting channel connected to said first terminal, a second electrode of said principal electrically conducting channel coupled to a second node and a common electrode disposed as a reference electrode;

a third transistor having a first electrode of a principal electrically conducting channel and a control electrode connected to a second terminal for a second voltage source and a second electrode of said principal electrically conducting channel coupled to said first node;

a fourth transistor having a first electrode of a principal electrically conducting channel and a control electrode connected to said second terminal and a second electrode of said principal electrically conducting channel coupled to said second node;

a fifth transistor having a first electrode of a principal electrically conducting channel connected to a third terminal for a third voltage source, a second electrode of said principal electrically conducting channel coupled to a third node and a control electrode coupled to said first node;

a sixth transistor having a first electrode of a principal electrically conducting channel connected to said third terminal, a second electrode of said principal electrically conducting channel coupled to an output terminal and a control electrode coupled to said second mode, for providing at said output terminal a measured signal representative of said bio-substance concentration of said biomaterial of interest;

a seventh transistor having a first electrode of a principal electrically conducting channel connected to a fourth terminal for a fourth voltage source and having a second electrode of said principal electrically conducting channel coupled to said third mode;

a eight transistor having a first electrode of a principal electrically conducting channel connected to said fourth terminal and having a second electrode of said principal electrically conducting channel coupled to said output terminal; and

control electrodes of said seventh and eighth transistors being coupled to said third node.

27. The circuit of claim 26, further comprised of said third transistor and said fourth transistor having the same-type channel as said first transistor.

28. The circuit of claim 26, wherein said first transistor comprises:

a P-type semiconductor substrate having first and second diffusion regions of a N-type material separated and spaced-apart by a gate region, said first and second diffusion regions respectively representative of a source region and a drain region;

a first insulating layer on the surface of said P-type semiconductor substrate;

an ion sensitive membrane on the surface of said first insulating layer;

first and second metal layers in a V-shape, each having a base in contact at a center of one of said source region and said drain region of said first transistor and a channel having two ends extending in parallel with a surface of said ion sensitive membrane;

an enzyme sensitive membrane directly on the surface of said ion sensitive membrane over said gate region of said first transistor, for sensing said physical and chemical properties of said biomaterial of interest; and

a second insulating layer on the surface of said first and second metal layers, for isolating said metal layers from said biomaterial of interest.

29. The circuit of claim 26 further comprising an aspect ratio of said seventh and eighth transistors to said third and fourth transistors providing a differential gain approaching unity.