Active patch antenna transmitter

• US 5,309,163 A
• Filed: 09/12/1991
• Issued: 05/03/1994
• Est. Priority Date: 09/12/1991
• Status: Expired due to Term

• Current Assignee: Northrop Grumman Corporation
• Original Assignee: TRW Limited (Zeppelin - Stiftung der Stadt Friedrichshafen)
• Inventors: Lam, Wayne W., Ngan, Yiu C., Saito, Yoshio
• Primary Examiner(s): Wimer, Michael C.
• Assistant Examiner(s): Ho, Tan
• Application Number:
  US07/758,135
• Time in Patent Office: 964 Days
• Field of Search: 343/700 MS, 343/846, 343/769, 343/745, 333/246, 333/247, 333/248
• US Class Current: 343/700.0MS
• CPC Class Codes: H01Q 23/00 Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 9/0407 Substantially flat resonant element parallel to ground plane, e.g. patch antenna dipole H01Q9/285; monopole H01Q9/40

Abstract

A "packageless" diode chip is integrated into a microstrip patch antenna. Application of DC current to the device results in efficient radiation of high powered microwave frequency signals directly into free space.

Claims

1. A microwave antenna transmitter device comprising:

a conductive ground plane;

a dielectric substrate disposed upon said ground plane, said substrate having an opening formed therein exposing an area of said ground plane;

an electrically conductive antenna patch disposed upon said dielectric substrate so as to surround said substrate opening;

a source of electrical energy; and

a packageless IMPATT diode chip electrically coupled to said source of electrical energy for generating microwave frequency energy therefrom, said diode chip conductively coupled to said antenna patch and to said ground plane and said diode chip being disposed upon said ground plane within said opening in said substrate in a spaced relationship with said substrate.

2. The device of claim 1 wherein said antenna patch is conductively coupled to said diode chip by a conductor spanning said substrate opening and conductively contacting said diode chip substantially in the center of said substrate opening.

3. The device of claim 1 further comprising a heat sink disposed between said diode chip and said ground plane to absorb heat dissipated by said diode chip.

4. The device of claim 3 wherein said heat sink comprises a metallized diamond embedded in said ground plane and bonded to said diode chip.

5. The device of claim 1 wherein said antenna patch comprises a metallic film on said substrate.

6. The device of claim 1 further comprising means for selectively tuning the transmitting frequency of said antenna patch.

7. The device of claim 6 wherein said means for tuning comprises an integral tuning stub electrically coupled to said antenna patch.

8. The device of claim 7 wherein said tuning stub comprises a metallic film on said substrate.

9. The device of claim 1 further comprising a DC bias line for electrically coupling said electrical energy source to said antenna patch.

10. The device of claim 9 wherein said DC bias line comprises a metallic film on said substrate.

11. The device of claim 9 wherein said bias line further comprises means for preventing high frequency signals from being conducted from the antenna patch toward the electrical energy source.

12. The device of claim 11 wherein said means for preventing comprises a plurality of radial stubs intersecting said bias line one quarter wavelength from said antenna patch.

13. The device of claim 1 wherein said device radiates RF power directly into free space.

14. The device of claim 1 further comprising means for preventing high frequency signals being conducted from the antenna patch toward said electrical energy source.

15. A millimeter wave antenna transmitter comprising:

a conductive ground plane;

a dielectric substrate disposed on said ground plane, said substrate having an opening formed therein exposing an area of said ground plane within said opening;

an electrically conductive antenna patch disposed upon said dielectric substrate, said antenna patch surrounding said substrate opening;

a packageless millimeter wave impact avalanche transit time (IMPATT) diode chip disposed upon said ground plane within said substrate opening and spaced from said substrate, said diode chip conductively coupled to said antenna patch by a conductor spanning said substrate opening and contacting said diode chip substantially in the center of said substrate opening;

a heat sink disposed between said diode chip and said ground plane to absorb heat dissipated by said diode chip;

an integral tuning stub electrically coupled to said antenna patch;

a DC bias line for electrically coupling a DC power source to said antenna patch; and

means for preventing high frequency signals being transmitted from the antenna patch toward the DC power source including a plurality of radial stubs intersecting said bias line one quarter wavelength from said antenna patch, wherein said antenna patch, DC bias line, tuning stub, and means for preventing further comprise a conductive metallic film on said substrate.