Undercut membrane mask for high energy photon patterning

• US 5,326,426 A
• Filed: 11/14/1991
• Issued: 07/05/1994
• Est. Priority Date: 11/14/1991
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Zapka, Werner, Tam, Andrew C., Wolbold, Gerhard E.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/791,712
• Time in Patent Office: 964 Days
• Field of Search: 156/628, 156/643, 156/647, 156/651, 156/653, 156/657, 156/659.1, 156/662, 156/345, 156/644, 430/5, 428/134, 428/137, 219/121.68, 219/121.69, 219/121.85
• US Class Current: 216/12
• CPC Class Codes: G03F 1/20 Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
• CPC Class Codes: Y10T 428/24322 Composite web or sheet

Abstract

A mask for use with high energy radiation sources in precision projection processing by excimer lasers, for example, is described. The mask comprises a suitable substrate, such as silicon, upon which a multilayer dielectric stack is formed which acts as a reflective coating for the impinging excimer laser radiation, minimizing energy absorption by the mask substrate. The mask transparent areas are defined by the through-holes in the mask. The through-holes are formed with a conically undercut edge profile to define a thin object plane for the mask and minimize scattering of the radiation from the through-hole sidewalls. A method for fabricating the mask is also described.

Claims

1. A mask for use with high energy radiation sources comprising:

a substrate;

at least one dielectric layer formed on a first surface of said substrate to produce a layered structure having a thickness of a first dimension; and

at least one aperture in said layered structure, said aperture extending through said substrate, said aperture having a generally conically undercut edge profile with substantially vertical sidewalls of a second dimension adjacent to said first surface, said second dimension being substantially less than said first dimension for providing a thin object plane for said mask.

2. A mask as in claim 1 wherein said vertical sidewalls extend through said dielectric layer and said first surface to a first predetermined depth in said substrate.

3. A mask as in claim 2 wherein said substrate includes a doped layer at said first surface, said doped layer having a higher concentration of dopant impurities to said first predetermined depth in said substrate than the substrate beneath said doped layer.

4. A mask as in claim 3 wherein said second dimension is in the range of approximately between 3 and 4 micrometers.

5. A mask as in claim 1 having at least one tub-shaped recess formed in a second side of said substrate opposite said first surface for forming a membrane of said substrate material in the area of said recess, a plurality of said apertures forming a desired pattern extending through said membrane into said recess, each said aperture having said generally conically undercut edge profile, said membrane having a predetermined thickness, said second dimension being substantially less than said predetermined thickness.

6. A mask as in claim 5 wherein said substrate includes a doped layer at said first surface, said doped layer having a higher concentration of dopant impurities than the substrate beneath said doped layer, said dielectric layer overlying said doped layer.

7. A mask as in claim 6 wherein each said aperture conically undercut edge profile comprises said vertical side walls of said second dimension extending through said dielectric layer and said doped layer, said doped layer being undercut a predetermined amount forming a thin lip for said aperture at said first surface and generally outwardly sloping sidewalls extending from said undercut doped layer to said recess.

8. A mask as in claim 7 wherein said predetermined thickness of said membrane is in the range of approximately between 35 and 40 micrometers and said second dimension is in the range of approximately between 3 and 4 micrometers.

9. A mask as in claim 7 wherein said substrate material comprises a crystalline silicon wafer having a (100) crystallographic orientation.

10. A mask as in claim 9 wherein the plane of said sloping sidewalls parallels the (111) crystallographic plane of said silicon substrate.

11. A mask as in claim 9 wherein said dopant impurity comprises boron.

12. A mask as in claim 1 wherein said substrate comprises a crystalline semiconductor wafer.

13. A mask as in claim 1 wherein said dielectric layer comprises a pair of dielectric materials, said layer comprising a coating of a first material and a coating of a second material overlying said first material, the index of refraction of said second material being higher than the index of refraction of said first material.

14. A mask as in claim 13 wherein said dielectric layer comprises a plurality of pairs of said dielectric materials.

15. A mask as in claim 13 wherein said first material is selected from the group consisting of silicon dioxide and magnesium fluoride, and said second material is selected from the group consisting of hafnium oxide, scandium oxide, aluminum oxide and thallium fluoride.

16. A method for fabricating a mask for use with high energy radiation sources comprising the steps of:

forming at a first surface of a planar substrate a doped layer, said doped layer having a higher concentration of dopant impurities to a first predetermined depth than the substrate beneath said doped layer;

forming a first masking layer on said first surface and a second masking layer on a second surface opposite said first surface of said substrate, said first masking layer defining a desired mask pattern;

forming at least one aperture through said second masking layer exposing selected portions of said second surface and etching said selected portions to form at least one recess in said substrate to a second predetermined depth, the substrate material remaining between said recess and said first surface forming a membrane;

etching said membrane through said first masking layer to form a plurality of apertures in said desired mask pattern, said apertures extending through said membrane into said recess;

anisotropic etching said membrane undercutting said heavily doped layer and forming outwardly sloping aperture sidewalls extending from said undercut layer to said recess defining a generally conical undercut edge profile for said apertures through said membrane;

removing said first and second masking layers; and

applying at least one dielectric layer to said first surface.

17. The method of claim 16 wherein the step of forming a doped layer at said first surface includes the step of forming a doped layer at said second surface of said substrate.

18. The method of claim 16 wherein said substrate comprises crystalline silicon.

19. The method of claim 18 wherein said dopant material comprises boron.

20. The method of claim 17 including the additional step of forming a doped layer on the surfaces defining said recess at the completion of said anisotropic etching step.

21. The method of claim 16 wherein each said masking layer comprises a layer of silicon dioxide.

22. The method of claim 21 wherein said step of forming each masking layer of silicon dioxide comprises depositing a layer of silicon dioxide by chemical vapor deposition.

23. The method of claim 18 wherein the step of etching said membrane through said first masking layer comprises anisotropic reactive ion etching to form said plurality of apertures, said apertures having vertical side walls.

24. The method of claim 18 wherein the step of anisotropic etching of said membrane comprises anisotropic wet etching in an alkaline solution.

25. The method of claim 24 wherein said alkaline solution comprises a 10-molar solution of potassium hydroxide.

26. The method of claim 24 wherein the plane of said sloping aperture sidewalls is parallel to the (111) crystallographic plane of said silicon substrate.

27. A method as in claim 16 wherein said dielectric layer comprises a pair of dielectric materials, said layer comprising a coating of a first material and a coating of a second material overlying said first material, the index of refraction of said second material being higher than the index of refraction of said first material.

28. A method as in claim 27 wherein said dielectric layer comprises a plurality of layers of said pairs of dielectric materials.

29. A method as in claim 27 wherein said first material is selected from the group consisting of silicon dioxide and magnesium fluoride, and said second material is selected from the group consisting of hafnium oxide, scandium oxide, aluminum oxide and thallium fluoride.

30. A method of laser processing a target substrate comprising the steps of:

generating a high energy radiation beam;

locating a transmission mask defining a desired processing pattern in front of said target substrate, said high energy radiation beam incident on said transmission mask, said mask comprising;

a substrate;

at least one dielectric layer formed on a first surface of said substrate to produce a layered structure having a thickness of a first dimension, said high energy radiation beam incident on said dielectric layer; and

at least one aperture in said layered structure, said aperture extending through said substrate and said dielectric layer, said aperture having a generally conically undercut edge profile with substantially vertical sidewalls of a second dimension adjacent to said first surface said second dimension being substantially less than said first dimension; and

imaging the radiation transmitted through said mask exiting said undercut aperture onto said target substrate.

31. A mask for use in laser processing of target materials comprising:

a substrate;

a reflective coating including at least one layer of dielectric material having a high reflectivity formed on a top surface of said substrate to produce a layered structure having a predetermined thickness; and

at least one aperture in said layered structure, said aperture extending through said layered structure.

38. A mask as in claim 31 wherein said layer of dielectric material comprises a pair of layers of dielectric material, said pair of layers comprising a layer of a first dielectric material and a layer of a second dielectric material, said layer of second dielectric material overlying said layer of first dielectric material, the index of refraction of said second dielectric material being higher than the index of refraction of said first dielectric material.

39. A mask as in claim 38 wherein said reflective coating comprises a plurality of pairs of said layers of first and second dielectric materials.

32. A mask for use in laser processing of target materials comprising:

a substrate;

at least one dielectric layer formed on a top surface of said substrate to produce a layered structure having a predetermined thickness; and

at least one tub-shaped recess formed in a bottom surface of said substrate opposite said top surface for forming a membrane of said layered structure in the area of said recess, said membrane being of said predetermined thickness, a plurality of apertures formed in said membrane defining a desired pattern therein and extending through said membrane into said recess, each aperture having generally vertical sidewalls.

33. A mask as in claim 32 wherein said substrate includes a doped layer at said top surface, said doped layer having a higher concentration of dopant impurities than the substrate beneath said doped layer, said dielectric layer overlying said doped layer.

34. A mask as in claim 33 wherein said membrane includes said doped layer.

35. A mask as in claim 34 wherein said membrane has a thickness in the range of approximately between 3 and 4 micrometers.

36. A mask as in claim 32 wherein said dielectric layer comprises a pair of dielectric materials, said layer comprising a coating of a first material formed on said top surface and a coating of a second material overlying said first material, the index of refraction of said second material being higher than the index of refraction of said first material.

37. A mask as in claim 36 wherein said dielectric layer comprises a plurality of pairs of said dielectric materials.