Power up detection circuit

• US 5,345,422 A
• Filed: 05/06/1993
• Issued: 09/06/1994
• Est. Priority Date: 07/31/1990
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Redwine, Donald J.
• Primary Examiner(s): CLAWSON JR, JOSEPH
• Application Number:
  US08/057,589
• Time in Patent Office: 488 Days
• Field of Search: 365/226, 365/229, 365/189.09, 307/272.3, 307/296.2
• US Class Current: 365/189.09
• CPC Class Codes: G11C 5/143 Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels G11C5/148 takes precedence; Switching between alternative supplies G11C5/141 takes precedence

Abstract

A circuit for producing a power up detection signal for use in, and being integrated onto the same semiconductor substrate as a dynamic memory device is disclosed. The circuit has a first node and a circuit to promote a low voltage on the first node when a voltage obtained from a supply voltage applied to the dynamic memory is below a predetermined level. It has a second node from which the power up detection signal can be removed. Included is a circuit to promote the obtained voltage on said second node when the obtained voltage is below the predetermined level, whereby the power up detection signal can be used to isolate the obtained voltage from the dynamic memory device. Included is a circuit to maintain a high voltage on the first node when the obtained voltage exceeds the predetermined level. Also included is a circuit to maintain the voltage on the second node at a low state when the high voltage appears on the first node, whereby the power up detection signal can be used to apply to obtained voltage to said dynamic memory device.

Claims

1. A power up detection circuit for a device formed on a semiconductor substrate, comprising:

a CMOS inverter formed of a P-channel transistor, an N-channel transistor, an input and an output, the P-channel transistor biased by a voltage that is coupled to the input; and

a first and a second N-channel transistor, the first N-channel transistor connected between the N-channel transistor of the CMOS inverter and ground, the second N-channel transistor connected between the first N-channel transistor and a source of the voltage, and the gate of the second N-channel transistor connected to the output of the CMOS inverter for initially applying to the N-channel transistor of the CMOS inverter during power up a potential for keeping the N-channel transistor turned off, thereby preventing the output of the CMOS inverter from being discharge through the N-channel transistor.

2. The power up detection circuit of claim 1 further including:

a third N-channel transistor connected between the input of the CMOS inverter and ground, having a gate connected to the source of the voltage.

3. The power up detection circuit of claim 2, further comprising:

a second P-channel transistor connected between the input of the CMOS inverter and ground, having a gate connected to a substrate.

4. A voltage detection circuit, comprising:

a source for supplying voltage;

an input node for receiving a voltage from the source;

an output node for transmitting a signal indicative of whether the received voltage is above or below a value;

a first N-channel transistor and a second N-channel transistor connected in series between ground and the output node, having their gates connected together to the input mode;

a third N-channel transistor connected between the series connection of the first and second N-channel transistors and the source supplying the received voltage, and having a gate connected to the output node; and

a P-channel transistor connected between the output node and the source supplying the received voltage, and having a gate connected to the input node.

5. The voltage detection circuit of claim 4 further comprising:

a second P-channel transistor connected between the input node and ground, having a gate connected to a substrate of semiconductor material that is biased when the received voltage is applied to the input node.

6. The voltage detection circuit of claim 5 further comprising:

a capacitor to couple the source supplying the received voltage to the output node.

7. The voltage detection circuit of claim 6 wherein the capacitor comprises:

a third P-channel transistor having a source and a drain connected together to the source supplying the received voltage and having a gate connected to the output node.

8. A power up detection circuit, comprising:

a CMOS inverter formed on a semiconductor substrate, said substrate biased at a substrate bias potential, said CMOS inverter having an input and an output, and said CMOS inverter being biased between a voltage source reference to ground, the voltage source being different from the substrate bias potential; and

a P-channel transistor connected between the input of the CMOS inverter and the ground, the transistor having a gate connected to the substrate bias potential.

9. The power up detection circuit of claim 8, said inverter comprising:

a first N-channel transistor connected between the input and the output of the CMOS inverter;

a first P-channel transistor connected between the input and output of the CMOS inverter, and connected between the first N-channel transistor and the voltage source;

a second N-channel transistor connected to the output of the CMOS inverter, and connected between the first N-channel transistor and the voltage source.

a second P-channel transistor connected between the input and output of the CMOS inverter, and connected to the voltage source;

a third N-channel transistor connected to the input of the CMOS inverter, and connected between the first N-channel transistor and the ground; and

said inverter presenting a hysteresis effect at the CMOS inverter input as the input switches between voltage levels of the voltage source and the ground.