Method of annealing a semiconductor

  • US 5,352,291 A
  • Filed: 08/11/1993
  • Issued: 10/04/1994
  • Est. Priority Date: 05/28/1991
  • Status: Expired due to Term
First Claim
Patent Images

1. A method for forming a crystalline semiconductor comprising the steps of:

  • forming an amorphous semiconductor;

    heat treating said amorphous semiconductor at a temperature not higher than a crystallization temperature of said amorphous semiconductor in order to discharge hydrogen contained in said amorphous semiconductor; and

    thenirradiating said amorphous semiconductor with a laser after heat treating said amorphous semiconductor to crystallize said amorphous semiconductor.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×