Method of annealing a semiconductor

• US 5,352,291 A
• Filed: 08/11/1993
• Issued: 10/04/1994
• Est. Priority Date: 05/28/1991
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kusumoto, Naoto, Zhang, Hongyong
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): HITESHEW, FELISA CARLA
• Application Number:
  US08/104,614
• Time in Patent Office: 419 Days
• Field of Search: 148/93, 148/135, 156/603, 156/612, 156/DIG. 73, 156/DIG. 80, 156/DIG. 89, 437/173, 437/174, 437/247, 437/248, 424/348, 424/349, 424/350
• US Class Current: 117/8
• CPC Class Codes: C30B 1/023 from solids with amorphous structure
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02686 Pulsed laser beam

Abstract

A process for crystallizing an amorphous semiconductor by irradiating a laser beam thereto, which comprises thermally annealing the amorphous semiconductor prior to the crystallization thereof in vacuum or in an inactive gas atmosphere at a temperature not higher than the crystallization temperature of the amorphous semiconductor, and then irradiating a laser beam to the thermally annealed amorphous semiconductor in vacuum or in an inactive gas atmosphere to crystallize the amorphous semiconductor. The process provides a uniform polycrystalline silicon film having high crystallinity, which has less dependence on the energy density of the laser beam which is irradiated thereto for crystallization, and hence useful for thin film devices such as insulated gate field effect transistors.

Claims

1. A method for forming a crystalline semiconductor comprising the steps of:

forming an amorphous semiconductor;

heat treating said amorphous semiconductor at a temperature not higher than a crystallization temperature of said amorphous semiconductor in order to discharge hydrogen contained in said amorphous semiconductor; and

then

irradiating said amorphous semiconductor with a laser after heat treating said amorphous semiconductor to crystallize said amorphous semiconductor.

2. The method of claim 1 wherein said laser light is an excimer laser light.

3. The method of claim 1 wherein the step of heat treating said amorphous semiconductor is performed in a vacuum or in an inactive atmosphere.

4. The method of claim 3 wherein said inactive atmosphere of said heating treating step comprises N₂.

5. The method of claim 1 wherein said amorphous semiconductor is formed by a CVD method.

6. The method of claim 1 wherein said amorphous semiconductor is formed by sputtering.

7. The method of claim 1 wherein the step of heat treating said semiconductor is carried out by using an infrared light.

8. A method for forming a crystalline semiconductor comprising the steps of:

thermally annealing an amorphous semiconductor in vacuum or inactive atmosphere in a first chamber at a temperature not higher than a crystallization temperature of said amorphous semiconductor in order to discharge hydrogen contained in said amorphous semiconductor;

transferring said amorphous semiconductor from said first chamber to a second chamber connected to said first chamber without exposing said amorphous semiconductor to an air; and

then

irradiating said amorphous semiconductor with a laser in vacuum or inactive atmosphere in said second chamber to crystallize said amorphous semiconductor.

9. The method of claim 8 wherein said laser light is an excimer laser light.

10. The method of claim 8 wherein said inactive atmosphere of said thermally annealing step comprises N₂.

11. A method for forming a crystalline semiconductor comprising the steps of:

forming an amorphous semiconductor;

heat treating said amorphous semiconductor at a temperature not higher than a crystalline temperature of said amorphous semiconductor in order to discharge hydrogen contained in said amorphous semiconductor; and

then

crystallizing said amorphous semiconductor after heat treating.

12. A method for forming a crystalline semiconductor comprising the steps of:

forming an amorphous semiconductor;

heat treating said amorphous semiconductor in order to form dangling bonds in said amorphous semiconductor at a sufficiently low temperature not to initiate a crystallization of said film; and

then

crystallizing said amorphous semiconductor after heat.

13. The method of claim 12 wherein said step of crystallizing said is performed by irradiating said with a laser.