Method for manufacturing a rotary anode for X-ray tube
First Claim
1. A method for manufacturing a rotary anode for use in an X-ray tube, said method comprising the steps of forming, on a graphite substrate plate, an intermediate layer of rhenium by subjecting rhenium chloride to a thermal decomposition CVD process at a substrate temperature of 1200°
- C. or more, and forming, on said intermediate layer, an X-ray generating layer of tungsten or tungsten-rhenium alloy by subjecting tungsten fluoride or both tungsten fluoride and rhenium fluoride to a hydrogen reduction thermal CVD process;
wherein said intermediate layer is about 10-50 microns thick and consists essentially of rhenium having an equiaxed grain structure which is free from columnar grain structure, and an average grain size of about 10-50 microns.
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Abstract
A method for manufacturing a rotary anode for use in an X-ray tube is proposed. The method has the step of forming, on a graphite substrate plate, an intermediate layer of rhenium by subjecting a metallic chloride to the thermal decomposition CVD process at a substrate temperature of 1200° C. or more. The method further has the step of forming, on the intermediate layer, an X-ray generating layer of tungsten or tungsten-rhenium alloy by subjecting a metallic fluoride to the hydrogen reduction thermal CVD process.
9 Citations
1 Claim
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1. A method for manufacturing a rotary anode for use in an X-ray tube, said method comprising the steps of forming, on a graphite substrate plate, an intermediate layer of rhenium by subjecting rhenium chloride to a thermal decomposition CVD process at a substrate temperature of 1200°
- C. or more, and forming, on said intermediate layer, an X-ray generating layer of tungsten or tungsten-rhenium alloy by subjecting tungsten fluoride or both tungsten fluoride and rhenium fluoride to a hydrogen reduction thermal CVD process;
wherein said intermediate layer is about 10-50 microns thick and consists essentially of rhenium having an equiaxed grain structure which is free from columnar grain structure, and an average grain size of about 10-50 microns.
- C. or more, and forming, on said intermediate layer, an X-ray generating layer of tungsten or tungsten-rhenium alloy by subjecting tungsten fluoride or both tungsten fluoride and rhenium fluoride to a hydrogen reduction thermal CVD process;
Specification
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- Resources
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Current AssigneeSumitomo Electric Industries Limited (Sumitomo Corporation), Tokyo Tungsten Co. Ltd. (Sumitomo Corporation)
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Original AssigneeSumitomo Electric Industries Limited (Sumitomo Corporation), Tokyo Tungsten Co. Ltd. (Sumitomo Corporation)
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InventorsKatoh, Yasuhiro, Takaoka, Shigehiko, Kawai, Hiromu, Ohara, Hisanori
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Primary Examiner(s)King, Roy V.
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Application NumberUS08/103,761Time in Patent Office420 DaysField of Search427/250, 427/255.7, 427/255.1, 427/314, 427/124, 427/255.2, 427/405, 378/144, 428/634, 428/665US Class Current427/250CPC Class CodesC23C 16/14 Deposition of only one othe...H01J 2235/084 Target-substrate interlayer...H01J 35/108 Substrates for and bonding ...
