Method for the formation of a silicon oxide film

• US 5,370,903 A
• Filed: 10/29/1993
• Issued: 12/06/1994
• Est. Priority Date: 12/11/1992
• Status: Expired due to Term

• Current Assignee: Dow, Inc.
• Original Assignee: Dow Corning Toray Company Limited (Dow, Inc.)
• Inventors: Nakamura, Takashi, Sasaki, Motoshi, Mine, Katsutoshi
• Primary Examiner(s): LUSIGNAN, MICHAEL R
• Application Number:
  US08/146,380
• Time in Patent Office: 403 Days
• Field of Search: 427/226, 427/228, 427/377, 427/379, 427/387, 427/397.7, 427/126.2, 437/235, 437/238
• US Class Current: 427/126.2
• CPC Class Codes: C03C 17/23 Oxides C03C17/02 takes precedence
• CPC Class Codes: C03C 2217/213 SiO2
• CPC Class Codes: C03C 2218/32 After-treatment
• CPC Class Codes: C04B 2111/00844 for electronic applications
• CPC Class Codes: C04B 35/00 Shaped ceramic products characterised by their composition porous ceramic products C04B38/00; ceramic articles characterised by particular shape, see the relevant classes, e.g. linings for casting ladles, tundishes, cups or the like B22D41/02; ceramic substrates for microelectronic semi-conductors H01L23/15; Ceramics compositions containing free metal bonded to carbides, diamond, oxides, borides, nitrides, silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides or sulfides other than as macroscopic reinforcing agents C22C; shaping of ceramics B28B; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products chemical preparation of powders of inorganic compounds C01; infiltration of sintered ceramic preforms with molten metal C04B41/51
• CPC Class Codes: C04B 41/009 characterised by the material treated
• CPC Class Codes: C04B 41/4519 application under an other specific atmosphere
• CPC Class Codes: C04B 41/4554 the coating or impregnating material being an organic or organo-metallic precursor of an inorganic material
• CPC Class Codes: C04B 41/463 Organic solvents
• CPC Class Codes: C04B 41/5035 Silica
• CPC Class Codes: C04B 41/87 Ceramics
• CPC Class Codes: C23C 18/1212 Zeolites, glasses
• CPC Class Codes: C23C 18/122 Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
• CPC Class Codes: C23C 18/1275 performed under inert atmosphere
• CPC Class Codes: H01L 21/02134 the material comprising hydrogen silsesquioxane, e.g. HSQ
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/316 composed of oxides or glassy oxides or oxide based glass

Abstract

Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate followed by converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 vol % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.

Claims

1. A method for the formation of a silicon oxide film comprising:

forming a hydrogen silsesquioxane resin film on the surface of a substrate; and

converting the hydrogen silsesquioxane resin into a silicon oxide ceramic by heating the resin film-bearing substrate in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 volume % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦

80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.

2. The method of claim 1 wherein the hydrogen silsesquioxane resin film is formed on the surface of the substrate by preparing an organic solvent solution of the hydrogen silsesquioxane resin, applying this solution by a method selected from the group consisting of spin-coating, spraying, and immersion, and removing the solvent.

3. The method of claim 2 wherein the solvent is selected from the group consisting of aromatic solvents, aliphatic solvents, ketone solvents, ester solvents, and silicone solvents.

4. The method of claim 1 wherein the substrate is selected from the group consisting of glass substrates, ceramic substrates, metal substrates, and semiconductor devices.

5. The method of claim 1 wherein the inert gas is selected from the group consisting of nitrogen gas, argon gas, helium gas, and neon gas.

6. The method of claim 1 wherein the oxygen content is between 1 volume % and 19 volume %.

7. The method of claim 1 wherein the heating temperature is in the range of 250°

C. to 500°

C.

8. The method of claim 1 wherein the heat time is sufficient to lower the content of silicon-bonded hydrogen in the silicon oxide product to 15-80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.

9. A method for the formation of a silicon oxide film wherein said method is characterized by the formation of a hydrogen silsesquioxane resin film on the surface of a semiconductor device and subsequent conversion of said hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing semiconductor device in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 volume % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦

80% of the content of silicon-bonded hydrogen in tile hydrogen silsesquioxane resin.

10. A method for the formation of a silicon oxide film wherein said method is characterized by

the planarization of the topographical variations on the surface of a semiconductor device by the formation thereon of a hydrogen silsesquioxane resin film, and

subsequent conversion of said hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing semiconductor device in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 volume % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦

80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.