Method for the formation of a silicon oxide film

  • US 5,370,903 A
  • Filed: 10/29/1993
  • Issued: 12/06/1994
  • Est. Priority Date: 12/11/1992
  • Status: Expired due to Term
First Claim
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1. A method for the formation of a silicon oxide film comprising:

  • forming a hydrogen silsesquioxane resin film on the surface of a substrate; and

    converting the hydrogen silsesquioxane resin into a silicon oxide ceramic by heating the resin film-bearing substrate in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 volume % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦

    80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.

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