Wafer bonding of light emitting diode layers

  • US 5,376,580 A
  • Filed: 03/19/1993
  • Issued: 12/27/1994
  • Est. Priority Date: 03/19/1993
  • Status: Expired due to Term
First Claim
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1. A method of forming a light emitting diode (LED) comprising:

  • selecting a first material having properties compatible with fabricating LED layers having desired mechanical characteristics;

    providing a first substrate made of the selected first material;

    fabricating the LED layers on the first substrate, thereby forming an LED structure;

    selecting an optically transparent material compatible with enhancing light-emitting performance of the LED structure; and

    wafer bonding a transparent layer of the selected optically transparent material to the LED layers.

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