High contrast LED matrix

• US 5,382,811 A
• Filed: 03/18/1994
• Issued: 01/17/1995
• Est. Priority Date: 06/07/1991
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Takahashi, Nozomu
• Primary Examiner(s): Larkins, William D.
• Assistant Examiner(s): Wallace, Valencia Martin
• Application Number:
  US08/215,971
• Time in Patent Office: 305 Days
• Field of Search: 257/81, 257/82, 257/88, 257/99, 257/100, 313/499, 313/500, 313/501, 313/510, 313/512, 362/DIG. 800
• US Class Current: 257/88
• CPC Class Codes: G09F 9/33 being semiconductor devices, e.g. diodes
• CPC Class Codes: H01L 25/13 the devices being of a type provided for in group H01L33/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/483 Containers

Abstract

An optical semiconductor device having a substrate; a plurality of light-emitting diodes disposed in a specific arrangement on the substrate; a peripheral member for housing the substrate and the light-emitting diodes; a first resin layer formed on an area of said substrate within the peripheral member and not occupied by said light-emitting diodes, for securing the light-emitting diodes between the substrate and the peripheral member; and a second resin layer formed on the first resin layer, wherein: minute irregularities are formed on the second resin layer so that external light directed onto the exposed surface of the second resin layer is diffusedly reflected.

Claims

1. An optical semiconductor device comprising:

a substrate;

a plurality of light emitting diodes arrayed in a matrix on said substrate;

a peripheral member for housing said substrate and said plurality of light emitting diodes;

a first layer formed of a white resin having a high reflection factor which can reflect light irradiated from said plurality of light emitting diodes, said first layer being disposed on an area of said substrate within said peripheral member and being penetrated by said plurality of light emitting diodes, for securing said plurality of light emitting diodes between said substrate and said peripheral member; and

a second layer formed of a black resin, said second layer being disposed on said first layer and being penetrated by said plurality of light emitting diodes.

2. An optical semiconductor device according to claim 1, wherein an exposed surface of said second layer diffusedly reflects external incident light directed onto said exposed surface of said second layer.

3. An optical semiconductor device comprising:

a substrate;

a plurality of light emitting diodes arrayed in a matrix on said substrate;

a peripheral member for housing said substrate and said plurality of light emitting diodes;

a first layer formed of a white resin which is disposed on an area of said substrate within said peripheral member and which is penetrated by said plurality of light emitting diodes, for securing said plurality of light emitting diodes between said substrate and said peripheral member; and

a second layer formed of a black resin which is disposed on said first layer, an exposed surface of said second layer diffusedly reflecting external incident light directed onto said exposed surface of said second layer, wherein said second layer is provided with projecting sections at specific positions on a non-exposed surface thereof which contact corresponding openings provided in said first layer for accommodating said projecting sections.

4. An optical semiconductor device according to claim 3, wherein said projecting sections are formed in a cylindrical shape.

5. An optical semiconductor device according to claim 3, wherein said projecting sections project toward said first layer and are formed in a fan shape.

6. An optical semiconductor device comprising:

a substrate;

a plurality light emitting diodes arrayed in a matrix on said substrate;

a peripheral member for housing said substrate and said plurality of light emitting diodes; and

a layer formed of a black resin which absorbs incident external light, said layer being disposed on an area of said substrate within said peripheral member and being penetrated by said plurality of light emitting diodes, for securing said plurality of light emitting diodes between said substrate and said peripheral member.

7. An optical semiconductor device according to claim 6, wherein an exposed surface of said layer diffusedly reflects external incident light directed onto said exposed surface of said layer.