Electrically alterable non-voltatile memory with N-bits per memory cell

  • US 5,394,362 A
  • Filed: 06/04/1993
  • Issued: 02/28/1995
  • Est. Priority Date: 02/08/1991
  • Status: Expired due to Term
First Claim
Patent Images

1. An electrically alterable non-volatile multi-level memory device, comprising:

  • a non-volatile, multi-level memory cell means for storing input information for an indefinite perios of time as a discrete state of said memory cell means, said memory cell means includes more than two memory states;

    memory cell programming means for programming the memory state of said multi-level memory cell means to a predetermined state corresponding to input information to be stored in said memory cell means; and

    comparator means for comparing the memory state of said memory cell means with the input information to be stored in said memory and for generating a control signal indicative of the memory state of said memory cell;

    wherein said memory cell includes a gate which has an applied voltage being set to one of a plurality of voltage levels by said memory cell programming means corresponding to the input information.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×