Method for producing semiconductor integrated circuits and apparatus used in such method

• US 5,397,432 A
• Filed: 08/21/1991
• Issued: 03/14/1995
• Est. Priority Date: 06/27/1990
• Status: Expired due to Term

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Ishida, Toshiyuki, Harada, Fukashi, Kondo, Tetsuo, Konno, Jun-ichi, Ito, Takahiro, Fujimura, Shuzo, Shinagawa, Keisuke
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US07/743,383
• Time in Patent Office: 1,301 Days
• Field of Search: 156/643, 156/646, 156/664, 156/665, 156/666, 134/1
• US Class Current: 438/714
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/67173 in-line arrangement

Abstract

To prevent after-corrosion of wiring or electrodes formed by patterning films of aluminum or an alloy thereof by reactive ion etching (RIE) using an etchant containing chlorine gas or its gaseous compounds, residual chlorine on the surface of the wiring or electrodes is removed by exposing it to a plasma generated in an atmosphere containing water vapor or to neutral active species extracted from the plasma. This treatment is performed either at the same time or after an ashing operation, an operation for removing a resist mask used in the aforesaid RIE by adding water vapor to an atmosphere containing oxygen. To perform the latter separate treatment, an automatic processing system is disclosed in which an after-treatment apparatus for removing residual chlorine is connected, via a second load lock chamber, to an ashing apparatus connected to a RIE apparatus by a load lock chamber which is capable of making a vacuum.

Claims

1. A method for producing semiconductor integrated circuits, comprising the steps of:

a first step of selectively etching a metallic film formed on a surface of a substrate and exposed through a mask made of a resist which selectively covers said metallic film, by effectively contacting said metallic film exposed through said mask with a gaseous etchant comprising chlorine, bromine, or a compound thereof; and

a second step of removing the mask used in said etching by effectively ashing said mask, by contacting said mask with a plasma generated in an atmosphere comprising oxygen gas and water vapor under conditions sufficient to also remove etchant components remaining strongly attached to and in effective contact with said metallic film or said substrate down to a residual concentration which is sufficiently low as to prevent the substantial after corrosion of said metallic film, and

wherein removing of the residual gaseous etchant components includes using the plasma to force said gaseous etchant components to be released from said metallic film and said substrate.

2. The method according to claim 1, wherein the metallic film is composed of aluminum or an alloy thereof.

3. The method according to claim 2, further comprising the step of:

providing a barrier layer between the metallic film and the substrate so as to prevent a reaction between the metallic film and the substrate.

4. The method according to claim 1, wherein the substrate is maintained at a temperature of between 100°

and 250°

C. during said second step.

5. The method according to claim 1, wherein during said second step, said removing of the mask and said removing of chlorine, bromine, or a compound thereof which are components of the gaseous etchant each include using neutral active species extracted from the plasma.

6. The method according to claim 1, wherein during said second step, the mask and the metallic film exposed as the result of said removing of the mask are exposed to the plasma.

7. A method for producing semiconductor integrated circuits, comprising the steps of:

a first step of selectively etching a metallic film formed on a surface of a substrate and exposed through a mask by using a gaseous etchant comprising chlorine, bromine, or a compound thereof after the metallic film is selectively covered with the mask made of a resist; and

a second step of removing the mask used in said etching by ashing, said second step including separately generating a plasma in a first atmosphere containing oxygen gas and in a second atmosphere containing water vapor, exposing the mask to neutral active species extracted from the plasma generated in the first atmosphere, and removing chlorine, bromine, or a compound thereof which are components of a residual etchant exposed on a surface of the metallic film by exposing the residual etchant components to at least neutral active species in the plasma generated in the second atmosphere thereby forcing the residual etchant components to be released from the substrate.

8. The method according to claim 7, wherein the metallic film is composed of aluminum or an alloy thereof.

9. The method according to claim 8, wherein a barrier layer for blocking the reaction between the metallic film and the substrate is provided between the metallic film and the substrate.

10. The method according to claim 7, wherein the substrate is maintained at a temperature of between 100°

and 250°

C. during said second step.

11. A method for producing semiconductor integrated circuits, comprising the steps of:

a first step of selectively etching a metallic film exposed through a mask by contacting said metallic film exposed through said mask with a gaseous etchant comprising chlorine, bromine, or a compound thereof after the metallic film formed on a surface of a substrate is selectively covered with the mask made of a resist;

a second step of removing the mask used in said etching by ashing by effectively contacting said mask with a first plasma generated in a first atmosphere comprising oxygen gas; and

a third step of removing chlorine, bromine, or a compound thereof, which are components of residual etchant on a surface of the metallic film which have become exposed as the result of said removing of the mask, said step of removing the residual etchant components including contacting said metallic film with a second plasma generated in a second atmosphere comprising water vapor thereby forcing the residual etchant components to be released from the surface of said metal.

12. The method according to claim 11, wherein said second and third steps are performed by using the same apparatus.

13. The method according to claim 11, wherein said second and third steps are performed by using a different apparatus for each step.

14. The method according to claim 13, wherein the apparatus used in said third step is of a downflow type.

15. The method according to claim 11, wherein the metallic film is composed of aluminum or an alloy thereof.

16. The method according to claim 11, further comprising the step of:

providing a barrier layer between the metallic film and the substrate so as to prevent a reaction between the metallic film and the substrate.

17. The method according to claim 11, wherein the substrate is maintained at a temperature of between 100°

and 250°

C. in said second step.

18. The method according to claim 11, wherein the metallic film is exposed to neutral active species extracted from the second plasma in said third step.

19. The method according to claim 11, wherein the metallic film is exposed to the second plasma in said third step.