Method for producing semiconductor integrated circuits and apparatus used in such method

  • US 5,397,432 A
  • Filed: 08/21/1991
  • Issued: 03/14/1995
  • Est. Priority Date: 06/27/1990
  • Status: Expired due to Term
First Claim
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1. A method for producing semiconductor integrated circuits, comprising the steps of:

  • a first step of selectively etching a metallic film formed on a surface of a substrate and exposed through a mask made of a resist which selectively covers said metallic film, by effectively contacting said metallic film exposed through said mask with a gaseous etchant comprising chlorine, bromine, or a compound thereof; and

    a second step of removing the mask used in said etching by effectively ashing said mask, by contacting said mask with a plasma generated in an atmosphere comprising oxygen gas and water vapor under conditions sufficient to also remove etchant components remaining strongly attached to and in effective contact with said metallic film or said substrate down to a residual concentration which is sufficiently low as to prevent the substantial after corrosion of said metallic film, andwherein removing of the residual gaseous etchant components includes using the plasma to force said gaseous etchant components to be released from said metallic film and said substrate.

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