High efficiency N-channel charge pump having a primary pump and a non-cascaded secondary pump

  • US 5,412,257 A
  • Filed: 10/20/1992
  • Issued: 05/02/1995
  • Est. Priority Date: 10/20/1992
  • Status: Expired due to Term
First Claim
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1. A charge pump for an integrated circuit comprising:

  • a secondary charge pump coupled to a first node;

    a first transistor having a gate electrode, a source electrode and a drain electrode, wherein said gate electrode is coupled to said first node, said source electrode is coupled to a pumped node, and said drain electrode is coupled to a second node;

    a second transistor having a gate electrode, a source electrode and a drain electrode, wherein said source electrode is coupled to said second node, said drain electrode is coupled to a first voltage supply, and said gate electrode is coupled to a third node;

    a third transistor having a gate electrode, a source electrode and drain electrode, wherein said drain electrode and gate electrode are coupled to said first voltage supply, and said source electrode is coupled to said third node;

    a fourth transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said third node, and said gate electrode is coupled to said first node;

    a fifth transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said first node, and said gate electrode is coupled to a fourth node;

    a sixth transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said fourth node, and said gate electrode is coupled to said first node; and

    a plurality of capacitors coupling respective clock signals to said first, second, third and fourth nodes.

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