High efficiency N-channel charge pump having a primary pump and a non-cascaded secondary pump

• US 5,412,257 A
• Filed: 10/20/1992
• Issued: 05/02/1995
• Est. Priority Date: 10/20/1992
• Status: Expired due to Term

• Current Assignee: ProMOS Technologies, Inc.
• Original Assignee: United Memories Incorporated (ProMOS Technologies, Inc.), Nippon Steel Semiconductor Corporation (United Microelectronics Corporation)
• Inventors: Hardee, Kim C., Cordoba, Michael V.
• Primary Examiner(s): Callahan, Timothy P.
• Assistant Examiner(s): LAM, TUAN THIEU
• Application Number:
  US07/964,003
• Time in Patent Office: 924 Days
• Field of Search: 307/296.2, 307/296.5, 307/296.6, 307/296.1, 307/264, 307/296.8
• US Class Current: 327/536
• CPC Class Codes: G11C 5/145 Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor G11C5/141 takes precedence
• CPC Class Codes: H02M 3/073 Charge pumps of the Schenkel-type

Abstract

A high efficiency charge pump for low and wide voltage ranges. The charge pump includes main and secondary charge pumps, the secondary charge pump is employed to avoid the Vt_N drop that the main charge pump exhibits. The secondary charge pump allows the main charge pump to pump to a theoretical maximum of 2 VCC, while maintaining an efficiency close to 40%.

Claims

1. A charge pump for an integrated circuit comprising:

a secondary charge pump coupled to a first node;

a first transistor having a gate electrode, a source electrode and a drain electrode, wherein said gate electrode is coupled to said first node, said source electrode is coupled to a pumped node, and said drain electrode is coupled to a second node;

a second transistor having a gate electrode, a source electrode and a drain electrode, wherein said source electrode is coupled to said second node, said drain electrode is coupled to a first voltage supply, and said gate electrode is coupled to a third node;

a third transistor having a gate electrode, a source electrode and drain electrode, wherein said drain electrode and gate electrode are coupled to said first voltage supply, and said source electrode is coupled to said third node;

a fourth transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said third node, and said gate electrode is coupled to said first node;

a fifth transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said first node, and said gate electrode is coupled to a fourth node;

a sixth transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said fourth node, and said gate electrode is coupled to said first node; and

a plurality of capacitors coupling respective clock signals to said first, second, third and fourth nodes.

2. A device according to claim 1 further comprising:

a seventh transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said third node, and said gate electrode is coupled to a fifth node; and

another capacitor coupling said fifth node to a corresponding clock signal.

3. A device of claim 2 wherein each of said capacitors comprises a transistor having its source and drain electrodes coupled together to form one capacitor terminal and having the transistor gate electrode as another capacitor terminal;

and

wherein said first, second, third, fourth, fifth, sixth and seventh transistors and said plurality of capacitors are N-type devices, said plurality of capacitors being transistor-like devices, each having its respective source and drain electrodes connected together to constitute one capacitor electrode, the gate electrode being the other capacitor electrode.

4. A device according to claim 1 wherein said secondary charge pump is an N-type single-stage charge pump.

5. A charge pump for an integrated circuit comprising:

a first transistor having a gate electrode, a source electrode and a drain electrode, wherein said gate electrode is coupled to a first node, said source electrode is coupled to a pumped node, and said drain electrode is coupled to a second node;

a second transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to a first voltage supply, said gate electrode is coupled to a third node, and said source electrode is coupled to said second node;

a third transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode and gate electrode are coupled to said first voltage supply, and said source electrode is coupled to said third node;

a fourth transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said third node, and said gate electrode is coupled to said first node;

a fifth transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said first node, and said gate electrode is coupled to a fourth node;

a sixth transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said third node, and said gate electrode is coupled to a fifth node;

a seventh transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said fourth node, and said gate electrode is coupled to said first node;

an eighth transistor having a gate electrode, a source electrode and a drain electrode, wherein said source electrode is coupled to said first node, said drain electrode is coupled to a sixth node, and said gate electrode is coupled to said fifth node;

a ninth transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said fifth node, and said gate electrode is coupled to a seventh node;

a tenth transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode is coupled to said first voltage supply, said source electrode is coupled to said seventh node, and said gate electrode is coupled to said fifth node;

an eleventh transistor having a gate electrode, a source electrode and a drain electrode, wherein said drain electrode and said gate electrode are coupled to said first voltage supply, and said source electrode is coupled to said seventh node;

a twelfth transistor having a gate electrode, a source electrode and a drain electrode, wherein said source electrode is coupled to said sixth node, said drain electrode is coupled to said first voltage supply, and said gate electrode is coupled to said seventh node;

a plurality of capacitors coupling respective clock signals to said first, second, third, fourth, fifth, sixth and seventh nodes.

6. The device of claim 5 wherein each of said capacitors comprises a transistor having its source and drain electrodes coupled together to form one capacitor terminal and having the transistor gate electrode as another capacitor terminal;

and

wherein said first, second, third fourth, fifth, sixth, seventh, eighth, ninth, tenth, eleventh and twelfth transistors, and said plurality of capacitors are N-type devices, said plurality of capacitors being transistor-like devices, each having its respective source and drain electrodes connected together to constitute one capacitor electrode, the gate electrode being the other capacitor electrode.

7. The device of claim 5 wherein said first and second transistors are larger than said eighth and twelfth transistors.

8. The device of claim 5 wherein said capacitor coupled to said second node is larger than said capacitor coupled to said sixth node.

9. A charge pump for an integrated circuit comprising:

a first charge pump including a first transistor having a gate electrode, a first electrode and a second electrode, wherein said gate electrode is coupled to a first node, said first electrode is coupled to a capacitive load, and said second electrode is coupled to a second node,

wherein said second node is connected to receive a first clock signal via a first capacitor;

a second transistor having a gate electrode coupled to a third node, the second transistor selectively coupling a supply voltage VCC to said second node, whereby said second node can receive VCC and then be boosted to 2 VCC by a transition in said first clock pulse;

a first voltage generation circuit for developing a voltage higher than 2 VCC at said first node, including a third transistor for selectively coupling VCC to the first node, a second charge pump for pumping charge to said first node to elevate the voltage thereof above VCC, and a second capacitor coupling a second clock signal to said first node for boosting said first node voltage to above 2 VCC, whereby the first transistor can couple a full 2 VCC from the second node to the capacitive load; and

a second voltage generation circuit for developing a voltage of 2 VCC at said third node, including a fourth transistor for selectively Coupling VCC to said third node and a third capacitor for coupling a third clock signal to said third node go that said third node voltage may be boosted.

10. A charge pump for an integrated circuit comprising:

a first charge pump having first charge pump output, a first charge pump input, and an internal node distinct from said first charge pump input; and

a second charge pump having a second charge pump input and a second charge pump output, said second charge pump output being coupled to said internal node for pumping said internal node to a high voltage,

said first charge pump receiving a power supply of VCC at said first charge pump input,

said second charge pump also receiving a power supply of VCC at said second charge pump input;

wherein said first charge pump includes first and second transistors having a first node coupled between them,

wherein said first node is coupled to receive a first clock signal,

wherein said first transistor is coupled to said first charge pump input,

wherein said second transistor is coupled to said first charge pump output, and

wherein said internal node is coupled to a control electrode of said second transistor;

whereby said first charge pump is able to pump said first charge pump output to a full 2 VCC.

11. The charge pump of claim 10 wherein the second charge pump is smaller in size than the first charge pump, so that said charge pump has a relatively high efficiency.

12. A charge pump for an integrated circuit comprising:

a first charge pump having first pump input coupled to receive a power supply voltage of VCC, a first pump output, and a first transistor selectively coupling said first pump input to said first pump output, so that charge from the first pump input can be transferred via the first transistor to the first pump output;

an internal node, distinct from said first pump input and coupled to a control electrode of said first transistor; and

a second charge pump having a second pump input coupled to receive said power supply voltage of VCC, and a second pump output, said second pump output being coupled to said internal node for pumping said internal node to a voltage sufficient to permit said first transistor to develop a full 2 VCC at said first charge pump output.

13. The charge pump of claim 12 wherein the second charge pump is smaller in size than the first charge pump, so that said integrated circuit charge pump has a relatively high efficiency.

14. The charge pump of claim 12 wherein the first charge pump includes a first capacitor having a first electrode coupled to receive a clock signal and a second electrode coupled to said first pump input.

15. The charge pump of claim 12 wherein the first charge pump includes a first capacitor and the second charge pump includes second and third capacitors, said second and third capacitors having respective electrodes coupled to receive clock signals,

another electrode of the second capacitor being coupled to said internal node;

another electrode of the third capacitor being coupled to receive VCC via said second pump input; and

a second transistor selectively coupling second pump input to said internal node so that when said second transistor is conductive, charge from the second pump input can be transferred to the internal node.

16. The charge pump of claim 15 wherein said charge pump includes a third transistor selectively coupling said internal node to VCC.

17. The charge pump of claim 16 wherein said second transistor includes a control electrode, and wherein said second charge pump further includes a fourth capacitor having one electrode coupled to said second transistor control electrode and another electrode coupled to receive a clock signal.

18. The charge pump of claim 12 wherein the first charge pump includes:

a first input transistor selectively coupling said VCC supply voltage to a first node, and

a first capacitor coupling a first clock signal to said first node, said first node being coupled to said first transistor;

a second capacitor coupling a second clock signal to said second node;

wherein said second charge pump includes

a second transistor selectively coupling a second node to a third node, said second node being said internal node;

a second input transistor selectively coupling said VCC supply voltage to said third node;

a third capacitor coupling a third clock signal to said third node; and

said second transistor having a control electrode responsively coupled to a fourth clock signal;

wherein the charge pump further includes a third transistor selectively coupling said second node to VCC;

whereby said first charge pump develops voltage at said first node and said second charge pump develops a voltage on said internal node sufficiently higher than 2 VCC so that said first transistor in the first charge pump will couple a full 2 VCC from the first node to the first pump output.

19. The charge pump of claim 18 wherein said third clock signal is said first clock signal.

20. The charge pump of claim 12 wherein at least one of said charge pumps is a single stage pump.

21. The charge pump of claim 12 wherein both of said charge pumps are single stage pumps.

22. The charge pump of claim 12 wherein the first charge pump includes a first capacitor coupled so that the first transistor is connected to transfer charge from the first capacitor to an output node associated with a load capacitance at the first pump output;

wherein the second charge pump includes a second capacitor coupled selectively by a second transistor to the internal node; and

wherein the charge pump includes a third capacitor connected to the internal node.

23. The charge pump of claim 12 wherein said second charge pump is coupled to receive a plurality of clock signals.

24. The charge pump of claim 12 wherein said first charge pump includes a plurality of first charge pump clock input nodes coupled to receive respective clock input signals,

wherein one of said first charge pump clock input nodes is coupled to said internal node.

25. The charge pump of claim 24 wherein said second charge pump is coupled to receive a plurality of clock signals at second charge pump clock input nodes;

wherein one of said clock signals applied to said first Charge pump is also applied to said second charge pump.

26. A method of pumping charge in an integrated circuit charge pump comprising the steps of:

turning on a first switch to couple a supply voltage VCC to a first node;

then

turning off the first switch;

turning on a second switch to pump charge from a second node to said first node so that the first node voltage rises higher than VCC;

then

turning off the second switch;

then

capacitively coupling a first clock pulse transition to the first node to drive the first node voltage above 2 VCC; and

developing a voltage of about 2 VCC at a third node isolated from the first node; and

controlling a third switch using the first node voltage to cause the third switch to pump a full 2 VCC from the third node to an output node.

27. The method of claim 26 further comprising the steps of:

after pumping the full 2 VCC to the output node, capacitively coupling a second clock transition opposite in direction to the first clock pulse transition to the first node thereby to lower the voltage at said first node to a range higher than VCC but below 2 VCC;

then

turning on the first switch to discharge the first node voltage to VCC.

28. A method of pumping charge in an integrated circuit charge pump comprising the steps of:

operating a first charge pump by coupling a supply voltage VCC to a first node, then driving said first node to 2 VCC, and turning on a first switch device to transfer the voltage on said first node to a capacitive output node;

wherein said step of turning on the first switch device includes a further step of operating a second charge pump to develop a voltage higher than 2 VCC on a control electrode of the first switch device.

29. A method of chaise pumping in an integrated circuit to develop a high voltage comprising the steps of:

operating first and second charge pumps, each having a respective output node, without cascading the pumps, so that current at the second pump output node is not transferred or pumped to the first pump output node,

operating the first charge pump by pumping charge from a first capacitor to an output node having an associated load capacitance,

operating the second charge pump by pumping charge from a second capacitor to an internal node, to develop a voltage higher at the internal node than a voltage developed at said first capacitor, the internal node having a third capacitance associated therewith,

wherein the step of operating the first charge pump further includes using the high voltage developed on the internal node as a control signal in the pumping of charge from the first capacitor to the output node.