Method and apparatus for improving data failure rate testing for memory arrays

• US 5,416,782 A
• Filed: 10/30/1992
• Issued: 05/16/1995
• Est. Priority Date: 10/30/1992
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Sama, Anil, Wells, Steven E.
• Primary Examiner(s): Canney, Vincent P.
• Application Number:
  US07/969,465
• Time in Patent Office: 928 Days
• Field of Search: 371/21.2, 371/21.3, 371/21.4, 371/21.6, 371/69.1, 371/71, 365/201, 365/189.09
• US Class Current: 714/719
• CPC Class Codes: G11C 29/44 Indication or identification of errors, e.g. for repair
• CPC Class Codes: G11C 29/56 External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor

Abstract

A circuit for testing the data failure rate of a flash memory array comprising apparatus for writing a test pattern to a memory array; and apparatus positioned in a data path prior to the interface between the memory array and circuitry external to the memory array for detecting differences in data read from the memory array and the test pattern written to the memory array, the last mentioned apparatus including apparatus for reading data from the memory array, apparatus for comparing the value of data read from the memory array with the value of data written to the array in the test pattern, and apparatus for storing a indication that a comparison has produced a result indicating a failure to compare.

Claims

1. A circuit for testing the data failure rate of a memory array having controller means for controlling an input/output data path to the array, the circuit comprising:

means in the controller means for writing a test pattern to the memory array; and

means in the controller means for detecting differences in data read from the memory array and the test pattern written to the memory array, the last mentioned means including means for reading data from the memory array,

means for comparing the value of data read from the memory array with the value of data written to the array in the test pattern, and

means for storing a indication that a comparison has produced a result indicating a failure to compare.

means for reading data from the memory array comprises means for reading data at a first rate greater than that at which the data may be read by a host.

2. A circuit for testing the data failure rate of a memory array as claimed in claim 1 in which the means in the controller means for writing a test pattern to a memory array includes means for writing a test pattern in which each position of the array stores a derivation of the offset address of the position.

3. A circuit for testing the data failure rate of a memory array as claimed in claim 2 in which the means for comparing the value of data read from the memory array with the value of data written to the array in the test pattern comprises means for detecting the address at which each position of data read resides for comparison with the value of the data read.

4. A circuit for testing the data failure rate of a memory array as claimed in claim 1 in which the means for reading data from the memory array comprises means for reading data at a first rate, means for detecting a read error, and means for reading data at a rate slower than the first rate when a read error is detected.

5. A circuit for testing the data failure rate of a memory array as in claim 1 in which the memory array is a flash memory array.