Semiconductor memory device and the manufacturing method thereof

  • US 5,436,506 A
  • Filed: 10/12/1993
  • Issued: 07/25/1995
  • Est. Priority Date: 10/12/1992
  • Status: Expired due to Term
First Claim
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1. A semiconductor memory device including a first memory cell comprising:

  • a semiconductor substrate;

    a first conductive layer formed on said substrate;

    a first and second access transistor each having a gate formed from said first conductive layer;

    an insulating layer formed on said first and second access transistor gates, said insulating layer having a first and second contact hole therein to expose said first and second access transistor gates, respectively;

    a second conductive layer formed on said insulating layer; and

    a first and second word line formed from said second conductive layer, said first word line being connected to said first access transistor gate through said first contact hole, and said second word line being connected to said second access transistor gate through said second contact hole.

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