Semiconductor memory device and the manufacturing method thereof

• US 5,436,506 A
• Filed: 10/12/1993
• Issued: 07/25/1995
• Est. Priority Date: 10/12/1992
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Han-soo, Kim, Kyung-tae
• Primary Examiner(s): Prenty, Mark V.
• Application Number:
  US08/134,815
• Time in Patent Office: 651 Days
• Field of Search: 257/903, 257/904, 257/758, 257/401, 257/393, 257/347, 257/366
• US Class Current: 257/347
• CPC Class Codes: H10B 10/00 Static random access memory [SRAM] devices
• CPC Class Codes: H10B 10/125 the MOSFET being a thin film transistor [TFT]
• CPC Class Codes: H10B 10/15 comprising a resistor load element
• CPC Class Codes: Y10S 257/903 FET configuration adapted for use as static memory cell
• CPC Class Codes: Y10S 257/904 with passive components,, e.g. polysilicon resistors

Abstract

An SRAM memory cell structure is provided which has the access transistor gates formed from a different layer than that of the word line. The first access transistor gate of a first memory cell is connected to the first access transistor gate of an adjacent second memory cell, and a second access transistor gate of the first memory cell is connected to a second access transistor gate of an third oppositely adjacent memory cell. Each pair of coupled gates are formed separate from the access transistor gates in adjacent memory cells. The word lines connect the separated access transistor gates. The word lines are formed on an insulating layer above the gates of the access transistors. The word lines are, however, electrically connected to the gates of the access transistors through contact holes formed in the insulating layer. Each memory cell is arranged symmetrically with respect to an adjacent memory cell, and the components of each memory cell are symmetrical. Therefore, a structure and a method for a reduction in the area of an SRAM cell of the conventional circuit design is provided, resulting in a larger layout margin and a more reliable and more highly integrated SRAM device.

Claims

1. A semiconductor memory device including a first memory cell comprising:

a semiconductor substrate;

a first conductive layer formed on said substrate;

a first and second access transistor each having a gate formed from said first conductive layer;

an insulating layer formed on said first and second access transistor gates, said insulating layer having a first and second contact hole therein to expose said first and second access transistor gates, respectively;

a second conductive layer formed on said insulating layer; and

a first and second word line formed from said second conductive layer, said first word line being connected to said first access transistor gate through said first contact hole, and said second word line being connected to said second access transistor gate through said second contact hole.

2. A semiconductor memory device according to claim 1, wherein said first and second access transistor gates are disposed parallel to said first and second word lines, respectively.

3. A semiconductor memory device according to claim 1, further comprising:

a second insulating layer formed on said second conductive layer, said first and second word lines being disposed on said second insulating layer; and

a ground line formed on said second insulating layer and disposed parallel to said first word line.

4. A semiconductor memory device according to claim 1, wherein:

said first access transistor gate of said first memory cell is connected to a first access transistor gate of an adjacent second memory cell; and

said second access transistor gate of said first memory cell is connected to a second access transistor gate of an oppositely adjacent third memory cell;

said first access transistor gate of said first memory cell does not contact a first access transistor gate of said third memory cell; and

said second access transistor gate of said first memory cell does not contact a second access transistor gate of said second memory cell.

5. A semiconductor memory device according to claim 4, further comprising:

first and second driver transistor gates disposed near a center of said first memory cell;

wherein said first and second access transistor gates are disposed near an edge of said first memory cell.

6. A semiconductor memory device according to claim 5, wherein said first and second driver transistor gates are formed perpendicular to said first and second access transistors gates, respectively.

7. A semiconductor memory device according to claim 6, wherein:

said first and second access transistor gates are formed perpendicular to said first and second driver transistor gates; and

said first and second access transistor gates are formed parallel to said first and second word lines.

8. A semiconductor memory device according to claim 4, wherein:

said first memory cell is symmetrical in formation to said second memory cell; and

said first memory cell is symmetrical in formation to said third memory cell.

9. A semiconductor memory device according to claim 1, further comprising:

first and second driver transistor gates disposed near a center of said first memory cell;

wherein said first and second access transistors and said first and second driver transistors of said first memory cell are adjacent to a second memory cell.

10. A semiconductor memory device according to claim 1, further comprising a first and second load element.

11. A semiconductor memory device according to claim 10, wherein said first and second load elements are bottom-gated PMOS thin film transistors.

12. A semiconductor memory device according to claim 10, wherein said first and second load elements are top-gated PMOS thin film transistors.

13. A semiconductor memory device according to claim 10, wherein said first and second load elements are double-gated PMOS thin film transistors.

14. A semiconductor memory device according to claim 10, wherein said first and second load elements are high-resistance polysilicon.