Method for capping copper in semiconductor devices

• US 5,447,887 A
• Filed: 04/01/1994
• Issued: 09/05/1995
• Est. Priority Date: 04/01/1994
• Status: Expired due to Term

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Gelatos, Avgerinos, Filipiak, Stanley M.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): EVERHART, CARIDAD
• Application Number:
  US08/222,759
• Time in Patent Office: 522 Days
• Field of Search: 437/200, 437/196, 437/198, 437/200, 437/196, 437/198
• US Class Current: 438/644
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 21/76867 characterized by methods of formation other than PVD, CVD or deposition from a liquids PVD H01L21/2855; CVD H01L21/28556; deposition from liquids H01L21/288
• CPC Class Codes: H01L 21/76886 Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances

Abstract

A silicon nitride layer (34) has improved adhesion to underlying copper interconnect members (30) through the incorporation of an intervening copper silicide layer (32). Layer (32) is formed in-situ with a plasma enhanced chemical vapor deposition (PECVD) process for depositing silicon nitride layer (34). To form layer (32), a semiconductor substrate (12) is provided having a desired copper pattern formed thereon. The copper pattern may include copper interconnects, copper plugs, or other copper members. The substrate is placed into a PECVD reaction chamber. Silane is introduced into the reaction chamber in the absence of a plasma to form a copper silicide layer on any exposed copper surfaces. After a silicide layer of a sufficient thickness (for example, 10 to 100 angstroms) is formed, PECVD silicon nitride is deposited. The copper silicide layer improves adhesion, such that silicon nitride layer is less prone to peeling away from underlying copper members.

Claims

1. A method for making a semiconductor device, comprising the steps of:

forming a copper member within a semiconductor device, wherein the copper member has an exposed surface;

forming a copper silicide layer on the exposed copper member surface; and

depositing a layer comprising silicon nitride on the copper silicide layer.

2. The method of claim 1 wherein the step of depositing a silicon nitride layer comprises depositing a silicon nitride layer in-situ with the step of forming a copper silicide layer.

3. The method of claim 1 wherein the step of forming a copper silicide layer comprises reacting the exposed copper member surface with silane.

4. The method of claim 1 wherein the step of forming a copper silicide layer is performed in a substantially plasma-free environment, and the step of depositing a layer comprising silicon nitride is performed in a plasma environment.

5. The method of claim 1 wherein the copper member has an original thickness, and wherein the step of forming a copper silicide layer comprises reacting the exposed copper member surface such that less than ten percent of the original thickness of the copper member is consumed.

21. The method of claim 1 wherein the step of forming a copper member comprises forming a copper interconnect.

6. A method for making a semiconductor device, comprising the steps of:

providing a semiconductor substrate;

forming a dielectric layer overlying the substrate, the dielectric layer having an opening formed therein;

depositing a copper layer over the dielectric layer such that copper substantially fills the opening;

removing any portions of the copper layer beyond the opening, leaving a surface of the copper layer within the opening exposed; and

capping the copper surface with a diffusion barrier material using a chemical vapor deposition process;

wherein the step of capping comprises the steps of;

forming a copper silicide layer by reacting a vapor species comprising silicon with the copper surface; and

then

forming a layer comprising silicon nitride on the copper silicide layer by reacting the vapor species comprising silicon with a vapor species comprising nitrogen.

7. The method of claim 6 wherein the step of forming a copper silicide layer comprises reacting the vapor species comprising silicon with the copper surface in absence of a plasma.

8. The method of claim 7 wherein the step of forming a layer comprising silicon nitride comprises reacting the vapor species comprising silicon with the vapor comprising nitrogen in presence of a plasma.

9. The method of claim 6 wherein the step of forming a copper silicide layer comprises forming a copper silicide layer by reacting silane with the copper surface.

10. The method of claim 9 wherein the step of forming a layer comprising silicon nitride comprises forming a layer comprising silicon nitride by reacting silane and ammonia.

11. The method of claim 6 wherein the copper within the opening has a thickness, after any copper beyond the opening is removed, and wherein the step of forming a copper silicide layer comprises forming a copper silicide layer such that less than ten percent of the copper thickness is consumed.

12. The method of claim 6 wherein the step of forming a copper silicide layer comprises forming a copper silicide layer having a thickness between approximately ten to one hundred angstroms.

13. The method of claim 6 wherein the step of forming a layer comprising silicon nitride is performed in-situ with the step of forming a copper silicide layer.

14. The method of claim 6 wherein the opening in the dielectric has sidewalls and a bottom, and further comprising the step of lining the sidewalls and bottom of the opening with a conductive diffusion barrier material, prior to depositing the copper layer.

15. The method of claim 14 wherein the step of lining comprises lining with a material selected from a group consisting of tantalum, titanium, and tungsten.

16. The method of claim 6 wherein the step of removing comprises removing by chemical mechanical polishing.

17. A method for making a semiconductor device comprising the sequential steps of:

providing a semiconductor substrate having an overlying dielectric layer;

forming a copper member overlying the substrate, the copper member having an exposed surface;

placing the substrate in a chemical vapor deposition reaction chamber;

introducing silane into the reaction chamber to form a copper silicide layer on the exposed copper surface;

generating a plasma within the chamber; and

introducing silane and ammonia into the reaction chamber in presence of the plasma to deposit a silicon nitride capping layer on the copper silicide layer.

18. The method of claim 17 wherein the step of forming a copper member comprises forming a copper interconnect.

19. The method of claim 17 wherein the step of forming a copper member comprises forming a copper member within an opening in the dielectric layer, and wherein the exposed copper surface is an upper surface of the copper member.

20. The method of claim 17 wherein the copper member has an original thickness, and wherein the step of introducing silane into the reaction chamber to form a copper silicide layer is terminated prior to consuming approximately ten percent of the original thickness of the copper member.