Visible and infrared indium antimonide (INSB) photodetector with non-flashing light receiving surface

CAFC
  • US 5,449,943 A
  • Filed: 06/02/1994
  • Issued: 09/12/1995
  • Est. Priority Date: 08/08/1991
  • Status: Expired due to Term
First Claim
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1. A broadband indium antimonide (InSb) photodetector device comprising:

  • an InSb substrate having a light receiving surface with substantially no native oxides of indium or antimony thereon, and accordingly substantially no carrier traps for electrons excited in the substrate by incident visible radiation, and a surface opposite said light receiving surface,at least one photosensitive semiconductor junction formed in either the light receiving surface or said opposite surface; and

    a passivation layer formed on said substantially native oxide-light receiving surface, said passivation layer being of a material which (a) is substantially transparent to a broadband spectrum that includes visible and infrared (IR) radiation components and (b) does not produce carrier traps through reacting with InSb,said detector responding to illumination of said light receiving surface by light over said broadband spectrum by generating electrons in the substrate in response to the visible component, and generating electron-hole pairs in the substrate in response to the IR component, with said holes moving to said photosensitive junction without substantial interference from the visible light generated electrons.

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