Three-dimensional static random access memory device for avoiding disconnection among transistors of each memory cell

  • US 5,452,247 A
  • Filed: 02/14/1995
  • Issued: 09/19/1995
  • Est. Priority Date: 12/20/1989
  • Status: Expired due to Term
First Claim
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1. A static random access memory device having a plurality of memory cells formed as a three-dimensional configuration, each of said memory cells including:

  • a lower layer formed on a substrate, said substrate being constituted by a silicon substrate;

    a plurality of first conductivity type MIS transistors formed on said lower layer;

    an interlayer insulation film formed on said first conductivity type MIS transistors, and over said lower layer;

    an upper layer formed on said interlayer insulation film, said upper layer being constituted by a melt-recrystallization layer;

    a plurality of second conductivity type MIS transistors formed on said upper layer;

    a contact hole formed in said interlayer insulation film at the portion above a diffusion region of one of said first conductivity type MIS transistors;

    a continuous polycrystal silicon film layer forming the gate of one of said second conductivity type MIS transistors extending continuously from said gate region and directly connected to said diffusion region through said contact hole; and

    a polycrystal silicon pad provided at a connection portion between said polycrystal silicon film layer and said diffusion region.

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