Process for preparing semiconductor substrate by bringing first and second substrates in contact

• US 5,453,394 A
• Filed: 01/28/1993
• Issued: 09/26/1995
• Est. Priority Date: 01/31/1992
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Yonehara, Takao, Yamagata, Kenji
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US08/010,296
• Time in Patent Office: 971 Days
• Field of Search: 148/DIG. 12, 148/DIG. 135, 437/86, 437/966, 437/62, 437/914, 437/974
• US Class Current: 438/455
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/76256 using silicon etch back techniques, e.g. BESOI, ELTRAN
• CPC Class Codes: Y10S 148/012 Bonding, e.g. electrostatic for strain gauges
• CPC Class Codes: Y10S 438/96 Porous semiconductor

Abstract

A process for preparing a semiconductor substrate comprises bringing a first substrate provided with at least one of boron and phosphorus on the surface of an insulating layer formed on the surface of the substrate in contact with a second substrate, and integrating both of the substrates by a heat treatment.

Claims

1. A process for preparing a semiconductor substrate comprising:

providing a first substrate having a semiconductor layer and an insulating layer;

forming a first layer comprising an element constituting said insulating layer and at least one of boron and phosphorus on the surface of said insulating layer;

contacting the first layer with a second substrate; and

integrating both of the substrates by a heat treatment to form the semiconductor substrate,

wherein the boron and/or the phosphorus are provided on the surface of the insulating layer by ion implantation.

3. A process according to claims 1 or 2, wherein the first substrate and the second substrate are single element semiconductors, compound semiconductors or one of the first and second substrates is glass.

4. A process according to claim 1, wherein the thickness of said first layer is in a range of from 0.1 to 1.0 μ

m.

5. A process according to claim 1 or 2, wherein the boron and/or the phosphorus are ion implanted in an amount ranging from 1×

10²⁰ to 5×

10²¹ cm^-3.

2. A process for preparing a semiconductor substrate which comprises bringing a first substrate and a second substrate each provided with at least one of boron and phosphorus on the surface of an insulating layer on the surface of the substrate in contact with each other so that the insulating layers are in contact with each other, and integrating both of the substrates by a heat treatment, wherein the boron and/or the phosphorus are provided on the surface of the insulating layer by ion implantation.